| 1. |
- Norling, Martin, 1981, et al.
(författare)
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A 2 GHz oscillator using a monolithically integrated AlN TFBAR
- 2008
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424417803 ; 1:1, s. 843-846
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Konferensbidrag (refereegranskat)abstract
- A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.
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| 2. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A Broadband 60-to-120 GHz single-chip MMIC multiplier chain
- 2009
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 441-444
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Konferensbidrag (refereegranskat)abstract
- This paper presents a single-chip 60 GHz to 120 GHz frequency multiplier chain based on 0.1 ?m GaAs mHEMT. The MMIC can deliver 3 to 5 dBm of output power from 110 GHz to 130 GHz with 2 dBm input power and consumes only 65 mW of DC power. The signal at the fundamental frequency is suppressed more than 20 dB over the band of interest. The impedance matching networks are realized using coupled transmission lines.
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| 3. |
- Alfonso, E., et al.
(författare)
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Design of microwave circuits in ridge gap waveguide technology
- 2010
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424460564 ; , s. 1544 - 1547
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Konferensbidrag (refereegranskat)abstract
- This paper presents recent advances is a new waveguiding technology referred to as ridge gap waveguides. The main advantages of the ridge gap waveguides compared to hollow waveguides are that they are planar and much cheaper to manufacture, in particular at high frequencies such as for millimeter and submillimeter waves. In these waveguides there are no mechanical joints across which electric currents must float. The gap waveguides have lower losses than microstrip lines, and they are completely shielded by metal so no additional packaging is needed, in contrast to the severe packaging problems associated with microstrip circuits. The gap waveguides are realized in a narrow gap between two parallel metal plates by using a texture on one of the surfaces. The waves follow metal ridges in the textured surface. All wave propagation in other directions is prohibited (in cutoff) by realizing a high impedance (ideally a perfect magnetic conductor) through the textured surface at both sides of all ridges. Thereby, cavity resonances do not appear within the band of operation. The paper studies the characteristic impedance of the line and presents simulations and measurements of circuits designed using this technology.
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| 4. |
- Alleaume, Pierre Franck, et al.
(författare)
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A highly integrated heterogeneous micro- and mm-wave platform
- 2010
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424477326 ; , s. 461-464
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- A highly integrated platform for micro- and mmwave frequency applications is introduced. The platform utilizes heterogeneous process modules with integrated passive and tunable devices together with silicon and GaAs MMIC technology to achieve outstanding flexibility. The different process modules are accounted for and their feasibility is proven through a number of application demonstrators from 23GHz telecom backhauling and 77GHz automotive radar indicating excellent performance. © 2010 IEEE.
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| 5. |
- Anderberg, Martin, 1992, et al.
(författare)
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A 183-GHz Schottky diode receiver with 4 dB noise figure
- 2019
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - : IEEE. - 0149-645X. ; 2019-June, s. 172-175
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Konferensbidrag (refereegranskat)abstract
- Atmospheric science based on space-borne millimeter wave measurements require reliable and state-of-the art receivers. In particular, the water vapor line at 183.3 GHz motivates the development of sensitive mixers at this frequency. Traditional assembly techniques employed in the production of Schottky diode receivers involve flip-chip mounting and soldering of discrete dies, which prohibit the implementation of reliable and repeatable production processes. In this work, we present a subharmonic 183 GHz mixer implementing a repeatable assembly method using beamlead Schottky diodes. The mixer was integrated with a InP HEMT MMIC low noise intermediate frequency amplifier resulting in a record-low receiver noise temperature of 450 K at 1 mW of local oscillator power measured at room-temperature. The measured Allan time was 10 s and the third order local oscillator spurious power was less than -60 dBm. The proposed assembly method is of particular importance for space-borne missions but also applicable to a wide range of terahertz applications.
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| 6. |
- Andersson, Christer, 1982, et al.
(författare)
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Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading
- 2012
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Konferensbidrag (refereegranskat)abstract
- The use of resistive loading at higher harmonics in wideband power amplifier design is proposed. Although the theoretical efficiency of such operation is lower than other classes the significantly simplified load network design potentially allows for multi-octave realizations. A decade bandwidth (0.4-4.1 GHz) GaN HEMT power amplifier was thereby designed, delivering more than 40 dBm output power with 10-15 dB gain and 40-62% drain efficiency. Linearized modulated signal amplification was then successfully demonstrated at multiple frequencies (0.9 to 3.5 GHz), using various downlink signals (LTE, WCDMA, WiMAX), with resulting ACLR lower than 46 dBc.
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| 7. |
- ANDERSSON, MICHAEL, 1988, et al.
(författare)
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Noise Figure Characterization of a Subharmonic Graphene FET Mixer
- 2012
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Konferensbidrag (refereegranskat)abstract
- We report on the first room temperature noise figure measurement of a graphene FET subharmonic resistive mixer in the interval fRF = 2-5 GHz. Due to an 8 nm thin Al2O3 gate dielectric it can operate with a conversion loss in the range 20-22 dB at only 0 dBm of local oscillator power. The measurement yields a noise figure close to the conversion loss, thus determining the noise to be thermal in origin, which is promising for cryogenic applications. The general route to lower noise figure is an improvement of the conversion loss.
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| 8. |
- Angelov, Iltcho, 1943, et al.
(författare)
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A balanced millimeter wave doubler based on pseudomorphic HEMTs
- 1992
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Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 1, s. 353-356
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Konferensbidrag (refereegranskat)abstract
- A balanced HEMT (high electron mobility transistor) doubler for operation at millimeter waves has been analyzed, fabricated, and characterized. Particular attention has been paid to the influence of the output circuit on the performance of the doubler. The doubler was analyzed with a harmonic balance method and an output power of 4 dBm at 42 GHz was obtained experimentally. The conversion gain is approximately -1 dB at 40 GHz at an input power of 5 dBm. Bias and frequency response were very close to the predicted ones.
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| 9. |
- Angelov, Iltcho, 1943, et al.
(författare)
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A new empirical nonlinear model for HEMT-devices
- 1992
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Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 0780306112 ; 3, s. 1583-1586
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Konferensbidrag (refereegranskat)abstract
- A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.
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| 10. |
- Angelov, Iltcho, 1943, et al.
(författare)
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F-band resistive mixer based on heterostructure field effect transistor technology
- 1993
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Ingår i: Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems. - 0149-645X. - 0780312090 ; 2, s. 787-790
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Konferensbidrag (refereegranskat)abstract
- A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band (90-140 GHz) is described for the first time. Nonlinear simulations have been performed for this mixer based on an specially designed double δ-doped pseudomorphic HFET device developed for this application. A minimum conversion loss between 12 to 13 dB was measured with the RF fixed at different frequencies between 108 to 114 GHz at an RF power of -13 dBm. Both theoretical and experimental results are presented in this paper.
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