1. |
- Zhang, Zhi-Bin, et al.
(författare)
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Photo-Activated Interaction Between P3HT and Single-Walled Carbon Nanotubes Studied by Means of Field-Effect Response
- 2009
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:12, s. 1302-1304
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Tidskriftsartikel (refereegranskat)abstract
- It is shown in this letter that the field-effect electrical response of transistors with their channel made of networks of single-walled carbon nanotubes (SWNTs) embedded in a poly(3-hexylthiophene) (P3HT) matrix can be significantly altered by light illumination. The experimental results indicate a photo-activated electron transfer from P3HT selectively to the semiconducting SWNTs. This finding points to a potential optoelectronic application of such a field-effect device as a photo-triggered electronic switch.
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2. |
- Ackelid, Ulf, et al.
(författare)
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Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures
- 1986
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 7:6, s. 353-355
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Tidskriftsartikel (refereegranskat)abstract
- Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.
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3. |
- Andersson, Christer, 1982, et al.
(författare)
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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
- 2011
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:6, s. 788-790
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Tidskriftsartikel (refereegranskat)abstract
- SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
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4. |
- Andersson, Christer M, et al.
(författare)
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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
- 2011
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Ingår i: IEEE ELECTRON DEVICE LETTERS. - : IEEE Institute of Electrical and Electronics. - 0741-3106. ; 32:6, s. 788-790
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Tidskriftsartikel (refereegranskat)abstract
- SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
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5. |
- Andersson, Kristoffer, 1976, et al.
(författare)
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Fabrication and characterization of field-plated buried-gate SiC MESFETs
- 2006
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
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6. |
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7. |
- Asad, M., et al.
(författare)
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Graphene FET on Diamond for High-Frequency Electronics
- 2022
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 43:2, s. 300-303
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Tidskriftsartikel (refereegranskat)abstract
- Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high charge-carrier mobility and saturation velocity in graphene can open way for ultra-fast field-effect transistors with a performance even better than what can be achieved with III-V-based semiconductors. However, the progress of high-speed graphene transistors has been hampered by fabrication issues, influence of adjacent materials, and self-heating effects. Here, we report on the improved performance of graphene field-effect transistors (GFETs) obtained by using a diamond substrate. An extrinsic maximum frequency of oscillation fmax of up to 54 GHz was obtained for a gate length of 500 nm. Furthermore, the high thermal conductivity of diamond provides an efficient heat-sink, and the relatively high optical phonon energy of diamond contributes to an increased charge-carrier saturation velocity in the graphene channel. Moreover, we show that GFETs on diamond exhibit excellent scaling behavior for different gate lengths. These results promise that the GFET-on-diamond technology has the potential of reaching sub-terahertz frequency performance.
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8. |
- Berg, Martin, et al.
(författare)
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Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- 2016
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 37:8, s. 966-969
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Tidskriftsartikel (refereegranskat)abstract
- Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best devices combine good ON- and OFF-performance, exhibiting an ON-current of 0.14 mA/μm, and a sub-threshold swing of 90 mV/dec at 190 nm LG. The device with the highest transconductance shows a peak value of 1.6 mS/μm. From RF measurements, the border trap densities are calculated and compared between devices fabricated using the gate-last and gate-first approaches, demonstrating no significant difference in trap densities. The results thus confirm the usefulness of implementing digital etching in thinning down the channel dimensions.
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9. |
- Beuerle, Bernhard, et al.
(författare)
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Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems
- 2023
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803
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Tidskriftsartikel (refereegranskat)abstract
- A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
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10. |
- Beuerle, Bernhard, et al.
(författare)
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Integrating InP MMICs and Silicon Micromachined Waveguides for Sub-THz Systems
- 2023
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803
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Tidskriftsartikel (refereegranskat)abstract
- A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB.
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