| 1. |
- Bremer, Johan, 1991, et al.
(författare)
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Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs
- 2024
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Ingår i: IEEE International Conference on Microelectronic Test Structures. - 1071-9032 .- 2158-1029.
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Konferensbidrag (refereegranskat)abstract
- A method to suppress trapping-related effects when performing IV characterizations of field effect transistors is presented. Standard IV measurements usually utilize voltage sweeps with fixed start, stop, and step values. At high electric fields in these sweeps, the charging of electron traps with long time constants may occur. The trapped electrons cause different memory effects such as hysteresis and the kink effect. The proposed method suppresses these effects, by reordering the bias points, so to prevent charging due to high preceding electric fields. The method provides more rudimentary IV measurements, useful for e.g. technology evaluation and modeling purposes.
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| 2. |
- Jeppson, Kjell, 1947, et al.
(författare)
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Hotspot test structures for evaluating carbon nanotube microfin coolers and graphene-like heat spreaders
- 2016
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Ingår i: 29th IEEE International Conference on Microelectronic Test Structures (ICMTS), Yokohama, Japan, Mar 28-31, 2016. - 1071-9032. ; 2016-May, s. 32-36
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Konferensbidrag (refereegranskat)abstract
- The design, fabrication, and use of a hotspot-producing and temperature-sensing test structure for evaluating the thermal properties of carbon nanotubes, graphene and boron nitride for cooling of electronic devices in applications like 3D integrated chip-stacks, power amplifiers and light-emitting diodes is described. The test structure is a simple meander-shaped metal resistor serving both as the hotspot and the temperature thermo-meter. By use of this test structure, the influence of emerging materials like those mentioned above on the temperature of the hotspot has been evaluated with good accuracy).
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| 3. |
- Jeppson, Kjell, 1947
(författare)
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Three- and Four-Point Hamer-type MOSFET Parameter Extraction Methods Revisited
- 2013
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Ingår i: IEEE International Conference on Microelectronic Test Structures (ICMTS 2013). - 1071-9032. - 9781467348461 ; :Osaka, Japan, s. 141-145
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Konferensbidrag (refereegranskat)abstract
- In this paper the three-point Hamer type and four-point Karlsson & Jeppson type MOSFET parameter extraction methods are revisited concerning robustness and selection of data points. The method for fitting models described by rational functions to measured data proposed by Hamming is also discussed and it is shown how this method calculates its weighted data points. An alternative method where MOSFET resistance values are used instead of current values for the extraction procedure is also investigated in an attempt to increase extraction method robustness. Finally, it is shown how the three point extraction method can be applied not only to the triode region but also to the MOSFET saturation region for separating parameters for the body effect and the velocity saturation
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