| 1. |
- Abadei, S., et al.
(författare)
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Low-frequency and microwave performances of laser-ablated epitaxial Na0.5K0.5NbO3 films on high-resistivity SiO2/Si substrates
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2267-2276
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Tidskriftsartikel (refereegranskat)abstract
- The dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 (NKN) films on high-resistivity (>7.7 kOmega cm) silicon SiO2/Si substrates are studied experimentally in the temperature interval of 30-320 K and at frequencies of 1.0 MHz-40 GHz. The films are grown by laser ablation from a stoichiometric target. For the measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of NKN films. The slot width between the electrodes is 2.0 or 4.0 mum. At low frequencies (f<1.0 GHz), the structure performance is that of a typical metal-dielectric-semiconductor type, where two of this type of capacitor are connected back to back. At these frequencies, the large change in the capacitance (more than 10 times at 1.0 MHz), due to the applied dc field, is mainly due to the changes in depletion layer thickness at the surface of silicon. The associated losses are also large, tan delta>1. At microwave frequencies (f>10 GHz), the voltage dependence of the capacitance is given by the NKN film. More than a 13% capacitance change at 40 V dc bias and a Q factor of more than 15 are observed at 40 GHz, which make the structure useful for applications in electrically tunable millimeter-wave devices.
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| 2. |
- Abadei, Saeed, 1961, et al.
(författare)
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Low-frequency and microwave performances of laser-ablated epitaxialNa 0.5 K 0.5 NbO 3 films on high-resistivitySiO 2 /Si substrates
- 2002
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91, s. 2267-
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Tidskriftsartikel (refereegranskat)abstract
- The dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxialNa 0.5 K 0.5 NbO 3 (NKN) films on high-resistivity (>7.7 kΩ cm) siliconSiO 2 /Si substrates are studied experimentally in the temperature interval of 30–320 K and at frequencies of 1.0 MHz–40 GHz. The films are grown by laser ablation from a stoichiometric target. For the measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of NKN films. The slot width between the electrodes is 2.0 or 4.0 μm. At low frequencies(f 1. At microwave frequencies(f>10 GHz), the voltage dependence of the capacitance is given by the NKN film. More than a 13% capacitance change at 40 V dc bias and a Q factor of more than 15 are observed at 40 GHz, which make the structure useful for applications in electrically tunable millimeter-wave devices
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| 3. |
- Aberg, D, et al.
(författare)
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Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen
- 1999
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Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 85, s. 8054-8059
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Tidskriftsartikel (refereegranskat)abstract
- Czochralski-grown silicon wafers doped with phosphorus (similar to 10(14) cm(-3)) have been annealed in nitrogen, wet nitrogen, oxygen, argon, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made using predominantly electrical techniques such as admittance spectroscopy and thermally stimulated capacitance measurements but also secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy were employed. In all samples, an increasing concentration of free carrier electrons is observed with increasing annealing time, reaching a maximum of similar to 10(16) cm(-3) at 100 h. For durations in excess of 100 h gradual decrease of the free electron concentration takes place except for the samples treated in wet nitrogen and oxygen atmospheres, which display donors stable even after 200 h. These stable centers are found to have shallower donor level positions in the energy band gap (similar to 25 meV below the conduction band edge E-c) than those of the centers formed in vacuum, argon, and nitrogen atmospheres (similar to 35 meV below E-c). The latter centers are associated with the well-established shallow thermal donors (STDs) while the origin of the former ones, which are labeled ultrashallow thermal donors (USTDs) is less known. However, on the basis of a wealth of experimental results we show that the USTDs are most likely perturbated STDs modified through interaction with fast-in diffusing oxygen species, possibly oxygen dimers. Further, comparison between the electrical data and the SIMS measurements reveals unambiguously that neither the STD nor the USTD centers involve nitrogen, in contrast to recent suggestions in the literature. (C) 1999 American Institute of Physics. [S0021-8979(99)06512-3].
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| 4. |
- Aberg, J, et al.
(författare)
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Electrical properties of the TiSi2-Si transition region in contacts : The influence of an interposed layer of Nb
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:5, s. 2380-2388
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Tidskriftsartikel (refereegranskat)abstract
- The influence of an interposed ultrathin Nb layer between Ti and Si on the silicide formation and the electrical contact between the silicide formed and the Si substrate is investigated. The presence of the Nb interlayer results in the formation of ternary alloy (Nb,Ti)Si-2 in the C40 crystallographic structure adjacent to the Si substrate. Depending on the nature of the Si substrates and/or the amount of the initial Nb, the interfacial C40 (Nb,Ti)Si-2 leads, in turn, to either epitaxial growth of a highly faulted metastable C40 TiSi2 or formation of the desired C54 TiSi2 at a lower temperature than needed for it to form in reference samples with Ti deposited directly on Si. On p-type substrates doped to various concentrations, the Nb also leads to a considerably lower specific contact resistivity than that obtained in the reference samples: a twofold to fourfold reduction in the contact resistivity is found using cross-bridge Kelvin structures in combination with two-dimensional numerical simulation. As C40 (Nb,Ti)Si-2 forms at the interface when an interfacial Nb is present, the interface characterized is likely to represent the one between (Nb,Ti)Si-2 and Si. For the reference samples, the interface studied is between TiSi2 and Si.
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| 5. |
- Abom, A.E., et al.
(författare)
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Characterization of the metal-insulator interface of field-effect chemical sensors
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:12, s. 9760-9768
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Tidskriftsartikel (refereegranskat)abstract
- The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.
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| 6. |
- Abrasonis, Gintautas, et al.
(författare)
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Nanoscale precipitation patterns in carbon-nickel nanocomposite thin films: Period and tilt control via ion energy and deposition angle
- 2010
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Ingår i: JOURNAL OF APPLIED PHYSICS. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 108:4, s. 043503-
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Tidskriftsartikel (refereegranskat)abstract
- Periodic precipitation patterns in C:Ni nanocomposites grown by energetic ion codeposition are investigated. Films were grown at room temperature by ionized physical vapor deposition using a pulsed filtered cathodic vacuum arc. We reveal the role of the film composition, ion energy and incidence angle on the film morphology using transmission electron microscopy and grazing incidence small angle x-ray scattering. Under these growth conditions, phase separation occurs in a thin surface layer which has a high atomic mobility due to energetic ion impacts. This layer is an advancing reaction front, which switches to an oscillatory mode, producing periodic precipitation patterns. Our results show that the ion induced atomic mobility is not random, as it would be in the case of thermal diffusion but conserves to a large extent the initial direction of the incoming ions. This results in a tilted pattern under oblique ion incidence. A dependence of the nanopattern periodicity and tilt on the growth parameters is established and pattern morphology control via ion velocity is demonstrated.
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| 7. |
- Adachi, N., et al.
(författare)
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Epitaxial Bi3Fe5O12(001) films grown by pulsed laser deposition and reactive ion beam sputtering techniques
- 2000
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 88:5, s. 2734-2739
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Tidskriftsartikel (refereegranskat)abstract
- We report on processing and comparative characterization of epitaxial Bi3Fe5O12 (BIG) films grown onto Gd-3(ScGa)(5)O-12[GSGG,(001)] single crystal using pulsed laser deposition (PLD) and reactive ion beam sputtering (RIBS) techniques. A very high deposition rate of about 0.8 mu m/h has been achieved in the PLD process. Comprehensive x-ray diffraction analyses reveal epitaxial quality both of the films: they are single phase, exclusively (001) oriented, the full width at half maximum of the rocking curve of (004) Bragg reflection is 0.06 deg for PLD and 0.05 deg for RIBS film, strongly in-plane textured with cube-on-cube film-to-substrate epitaxial relationship. Saturation magnetization 4 pi M-s and Faraday rotation at 635 nm were found to be 1400 Gs and -7.8 deg/mu m in PLD-BIG, and 1200 Gs and -6.9 deg/mu m in RIBS-BIG. Ferromagnetic resonance (FMR) measurements performed at 9.25 GHz yielded the gyromagnetic ratio gamma=1.797x10(7) l/s Oe, 1.826x10(7) l/s Oe; the constants of uniaxial magnetic anisotropy were K-u(*)=-8.66x10(4) erg/cm(3), -8.60x10(4) erg/cm(3); the cubic magnetic anisotropy K-1=-2.7x10(3) erg/cm(3),-3.8x10(3) erg/cm(3); and the FMR linewidth Delta H=25 and 34 Oe for PLD and RIBS films correspondingly. High Faraday rotation, low microwave loss, and low coercive field less than or equal to 40 Oe of BIG/GSGG(001) films promise their use in integrated magneto-optic applications.
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| 8. |
- Adamczyk, Krzysztof, et al.
(författare)
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Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing
- 2018
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 123:5, s. 1-6
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity.
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| 9. |
- Adamyan, Astghik, 1984, et al.
(författare)
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Superconducting microwave parametric amplifier based on a quasi-fractal slow propagation line
- 2016
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 119:8
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Tidskriftsartikel (refereegranskat)abstract
- Quantum limited amplifiers are sought after for a wide range of applications within quantum technologies and sensing. One promising candidate is the travelling wave parametric amplifier which exploits the non-linear kinetic inductance of a superconducting transmission line. This type of microwave amplifier promises to deliver a high gain, a quantum limited noise performance over several GHz bandwidth, and a high dynamic range. However, practical realizations of this type of device have so far been limited by fabrication defects, since the length of the superconducting transmission line required for achieving substantial parametric gain is on the order of similar to 1m. Here, we report on a design for a microwave traveling wave amplifier based on a slow propagation line comprising a central strip with high kinetic inductance and quasi-fractal line-to-ground capacitors. Due to an enhanced per unit length inductance (73 nH cm(-1)) and capacitance (15 pF cm(-1)), the line has a microwave propagation velocity as low as 9.8 x 10(8) cm s(-1). This translates into parametric gain up to 0.5 dB cm(-1) and a total gain of 6 dB for just a similar to 10 cm long transmission line. Moreover, the flexibility of the presented design allows balancing the line inductance and capacitance in order to keep the characteristic impedance close to 50 Omega and to suppress standing waves, both factors being essential in order to implement a practical parametric amplifier in the microwave domain.
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| 10. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:9, s. 093112-
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Tidskriftsartikel (refereegranskat)abstract
- Spectrally engineered semiconductor Fabry-Perot laser resonators are designed to enhance the optical feedback for selected longitudinal modes, which thereby require less gain for lasing. This is achieved by introducing refractive index perturbations along the length of the resonator. However,the physical realization of these resonators is a challenge because of very narrow tolerances; in particular the need for precise positioning of the end facets of the resonator in relation to the perturbations, and the excess propagation loss associated with the perturbations, has been a majorconcern. We report on a method to achieve high-quality end facet mirrors enabling precise positioning relative to the perturbations, the latter which are realized as lateral corrugations of the waveguide. Measurements show that the mirror quality is comparable to that of cleaved mirrorsand that the additional loss introduced by the perturbations adds
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