| 1. |
- Andersson, J. Y., et al.
(författare)
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Quantum structure based infrared detector research and development within Acreo's centre of excellence IMAGIC
- 2010
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 53:4, s. 227-230
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Tidskriftsartikel (refereegranskat)abstract
- Acreo has a long tradition of working with quantum structure based infrared (IR) detectors and arrays. This includes QWIP (quantum well infrared photodetector), QDIP (quantum dot infrared photodetector), and InAs/GaInSb based photon detectors of different structure and composition. It also covers R&D on uncooled microbolometers. The integrated thermistor material of such detectors is advantageously based on quantum structures that are optimised for high temperature coefficient and low noise. Especially the SiGe material system is preferred due to the compatibility with silicon technology. The R&D work on IR detectors is a prominent part of Acreo's centre of excellence "IMAGIC" on imaging detectors and systems for non-visible wavelengths. IMAGIC is a collaboration between Acreo, several industry partners and universities like the Royal Institute of Technology (KTH) and Linkoping University. (C) 2010 Elsevier B.V. All rights reserved.
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| 2. |
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| 4. |
- Engelbrecht, J. A. A., et al.
(författare)
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Notes on the plasma resonance peak employed to determine doping in SiC
- 2015
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Ingår i: Infrared physics & technology. - : ELSEVIER SCIENCE BV. - 1350-4495 .- 1879-0275. ; 72, s. 95-100
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Tidskriftsartikel (refereegranskat)abstract
- The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant gamma. (C) 2015 Elsevier B.V. All rights reserved.
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| 5. |
- Forsberg, Fredrik, et al.
(författare)
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Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays
- 2013
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 60, s. 251-259
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Tidskriftsartikel (refereegranskat)abstract
- Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.
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| 6. |
- Gustafsson, Oscar, et al.
(författare)
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A performance assessment of type-II interband In0.5Ga 0.5Sb QD photodetectors
- 2013
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 61, s. 319-324
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled quantum-dot (QD) structures with type-II band alignment to the surrounding matrix material have been proposed as a III/V material approach to realize small-bandgap device structures suitable for photon detection and imaging in the long-wavelength infrared (LWIR) band. Here, we analyze the photoresponse of In0.5Ga0.5Sb/InAs QD photodiodes and estimate the system performance of type-II QD -based photodetectors. A review of alternative design approaches is presented and the choice of matrix material is discussed in terms of band alignment and its effect on the photoresponse. Photodiodes were fabricated consisting of 10 layers of In0.5Ga 0.5Sb QDs grown on InAs (0 0 1) substrates with metal-organic vapor-phase epitaxy (MOVPE). The photoresponse and dark current were measured in single pixel devices as a function of temperature in the range 20-230 K. The quantum efficiency shows an Arrhenius type behavior, which is attributed to hole trapping. This severely limits the detector performance at typical LWIR sensor operating temperatures (60-120 K). A device design with the matrix material InAs0.6Sb0.4 is proposed as a mean to improve the performance by reducing the barrier for hole transport. This can potentially allow type-II InGaSb QDs to be a competitive sensor material for LWIR detection.
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| 7. |
- Gustafsson, Oscar, et al.
(författare)
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Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots
- 2013
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 59, s. 89-92
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Tidskriftsartikel (refereegranskat)abstract
- We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.
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| 8. |
- Gustafsson, Oscar, et al.
(författare)
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Long-wavelength infrared quantum-dot based interband photodetectors
- 2011
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 54:3, s. 287-291
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Tidskriftsartikel (refereegranskat)abstract
- We report on the design and fabrication of (Al)GaAs(Sb)/InAs tensile strained quantum-dot (QD) based detector material for thermal infrared imaging applications in the long-wavelength infrared (LWIR) regime. The detection is based on transitions between confined dot states and continuum states in a type-II band lineup, and we therefore refer to it as a dot-to-bulk (D2B) infrared photodetector with expected benefits including long carrier lifetime due to the type-II band alignment, suppressed Shockley-Read-Hall generation-recombination due to the relatively large-bandgap matrix material, inhibited Auger recombination processes due to the tensile strain and epitaxial simplicity. Metal-organic vapor-phase epitaxy was used to grow multiple (Al)GaAs(Sb) QD layers on InAs substrates at different QD nominal thicknesses, compositions, doping conditions and multilayer periods, and the material was characterized using atomic force and transmission electron microscopy, and Fourier-transform infrared absorption spectroscopy. Dot densities up to 1 x 10(11) cm(-2), 1 x 10(12) cm(-2) and 3 x 10(10) cm(-2) were measured for GaAs, AlGaAs and GaAsSb QDs, respectively. Strong absorption in GaAs, AlGaAs and GaAsSb multilayer QD samples was observed in the wavelength range 6-12 mu m. From the wavelength shift in the spectral absorption for samples with varying QD thickness and composition it is believed that the absorption is due to an intra- valance band transition. From this it is possible to estimate the type-II inter-band transition wavelength, thereby suggesting that (Al)GaAs(Sb) QD/InAs heterostructures are suitable candidates for LWIR detection and imaging.
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| 10. |
- Haglund, Jesper, 1973-, et al.
(författare)
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Infrared cameras in science education
- 2016
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Ingår i: Infrared Physics & Technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 75, s. 150-152
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Tidskriftsartikel (refereegranskat)abstract
- Infrared cameras can be used in science education. The technology suits open-ended thermodynamics laboratory exercises in higher education. School children engage in instant inquiry of thermal phenomena.
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