| 1. |
- Bowallius, O., et al.
(författare)
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Evaluation of different oxidation methods for silicon for scanning capacitance microscopy
- 2001
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 4:03-jan, s. 81-84
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Tidskriftsartikel (refereegranskat)abstract
- Different oxides, namely, native, thermal, and wet-chemical (H2SO4 + H2O2 based) oxides on Si are evaluated in the context of scanning capacitance microscopy (SCM). The samples investigated consisted of uniformly doped Si substrates and p-type epitaxial doping-staircase structures with concentrations ranging from 5 x 10(14) to 2 x 10(19) cm(-3) The bias for which the SCM signal (dC/dV) is maximised for the lowest doped region was used for comparing the different oxidation methods. It is shown that for a better evaluation of the surface oxide properties, it is essential to obtain dC/dV curves for a sufficiently large doping range. Best results in terms of low values of flat-band voltages (1 V), uniformity, and consistency across a large doping range were obtained for the wet-chemical oxide. For the native oxide case, the difference in the dC/dV peak bias Values obtained at regions doped to 5 x 10(14) to 10(17) cm(-3) was anomalously large and suggests appreciable distortion of the dC/dV curves. For the same oxidation procedure the full-width at half-maximum of the dC/dV curve obtained on the cleaved surface is typically 2 times larger than that on the planar (100) surface. It is most likely that interface states are responsible for the observed distortion.
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| 2. |
- Bowallius, O., et al.
(författare)
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Scanning capacitance microscopy investigations of SiC structures
- 2001
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 4:03-jan, s. 209-211
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Tidskriftsartikel (refereegranskat)abstract
- We have applied scanning capacitance microscopy (SCM) to investigate SIC structures grown by vapour-phase epitaxy. The SCM technique is evaluated using n- and p-type doping staircase structures with doping concentrations ranging from 10(16) to 10(20) cm(-3). The n- and p-type doping was obtained by doping SiC with nitrogen and aluminium, respectively. The sample cross-sections for SCM were obtained by simple cleaving. For doping levels above 10(17) cm(-3) the SCM data are consistent with doping data obtained independently from secondary ion mass spectroscopy (SIMS). Treating the samples with diluted hydrofluoric acid significantly improves the SCM signal for the low-doped regions. The SCM technique has been used to investigate doping redistribution in patterned regrowth of n- and p-type SIC around dry-etched mesas. In both cases, contrast variations were seen close to the mesa walls, indicative of doping variations; lower and higher incorporation for p- and n-type, respectively. The observations are shown to be consistent with the expected trends in dopant incorporation in the SiC material.
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| 3. |
- Duteil, F., et al.
(författare)
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Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
- 2000
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 3:5-6, s. 523-528
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Tidskriftsartikel (refereegranskat)abstract
- Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×1020 and 1×1021 cm-3, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si1-xGex and Si1-yCy layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54µm associated with the intra-4f transition of Er3+ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p-i-n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×1020 cm-3 we find that Er/O ratios of 1:2 or 1:4 give higher intensity than 1:1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400-575 °C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed.
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| 4. |
- Grivickas, P., et al.
(författare)
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Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
- 2001
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 4:03-jan, s. 191-194, s. 191-194
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Tidskriftsartikel (refereegranskat)abstract
- Depth-resolved carrier lifetime measurements were performed in low-doped epitaxial layers of 4H silicon carbide samples. The technique used was a pump-and-probe technique where carriers are excited by an above-bandgap laser pulse and probed by free carrier absorption. Results from chemical vapour deposition samples show that lifetimes as high as 2 mus may be observed in the mid-region of 40 mum thick epilayers. For epilayers grown by the sublimation method decay transients were characterised by a fast (few nanoseconds) initial recombination, tentatively assigned to the 'true' lifetime, whereas a slow tail of several hundred microsecond decay time was assigned to trapping centres. From the saturation of this level at increased pumping we could derive the trapping concentration and their depth distribution peaking at the epilayer/substrate interface.
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| 5. |
- Jacob, AP, et al.
(författare)
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Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor
- 2003
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier Science B.V., Amsterdam.. - 1369-8001 .- 1873-4081. ; 6:03-Jan, s. 37-41
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Tidskriftsartikel (refereegranskat)abstract
- Effect of temperature and time of heat treatment on the distribution of ion-implanted nitrogen in poly Si0.65Ge0.35 gate MOS samples was studied. Secondary ion mass spectrometry (SIMS) was used for the qualitative analysis of the nitrogen distribution. Rapid thermal processing was carried out for a temperature range of 950-1070degreesC for the redistribution of ions. The nitrogen implantation doses were 5 x 10(14) cm(-2), 2 x 10(15) cm(-2) and 5 x 10(15) cm(-2), all with an implantation energy of 50 keV. For a uniform distribution of nitrogen in the SiO2 region, an optimal temperature at a well calibrated time must be applied and this depends on the implantation dose. For medium and high concentrations the optimal conditions were 1050degreesC and 15s, and 1070degreesC and 15s, respectively. A uniform nitrogen distribution could be obtained throughout the SiO2 film. Prolonged heat treatment can cause degradation of the oxide layer and movement of the nitrogen and oxygen into the channel and the poly-Si0.65Ge0.35 layer.
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| 6. |
- Kuznetsov, A. Y., et al.
(författare)
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Self-interstitial migration during ion irradiation of boron delta-doped silicon
- 2000
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 3:4, s. 279-283
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Tidskriftsartikel (refereegranskat)abstract
- Boron delta layers in silicon, grown by molecular beam epitaxy and characterized by the secondary ion mass spectrometry, have been employed to investigate the migration of silicon self-interstitials during irradiation with MeV protons in the 500-850 degreesC temperature range. After growth, the samples were thinned from the backside to a thickness that made them transparent for the proton energies used. As a result, the generation rate of point defects can be considered as essentially uniform throughout the samples. However: the evolution of the boron profiles is almost identical to that observed after injection of self-interstitials caused by thermal oxidation of the samples at elevated temperature. This strongly indicates that the surface acts as a reflective boundary for the migrating self-interstitials or/ and an efficient sink for mobile vacancies. Furthermore, higher value of interstitial supersaturation in the near-surface region in proton-irradiated samples is consistent with experimentally detected depth dependence for immobile fraction in boron clusters. Then, activation energy of boron mobilization, (0.9 +/- 0.4) eV, was attributed to the dissociation of boron clusters.
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| 7. |
- Zetterling, Carl-Mikael, et al.
(författare)
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UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide
- 1999
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 2:1, s. 23-27
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Tidskriftsartikel (refereegranskat)abstract
- MOS capacitors using wet thermal oxidation of p-type 4H and 6H silicon carbide have been investigated using capacitance-voltage (CV) measurements. The interface state density was determined from displacements in the CV curves at room temperature after optical generation of carriers. Forming gas annealing at 400 °C after metallization was found to reduce the amount of deep interface states, and in combination with UV-ozone precleaning of the SiC substrates in a commercial system, the fixed oxide charge was also reduced.
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| 8. |
- Ahmad, Mohammed Metwally Gomaa, et al.
(författare)
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Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films
- 2017
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 64, s. 32-38
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Tidskriftsartikel (refereegranskat)abstract
- Nickel oxide thin films were deposited by a simple and low-cost spray pyrolysis technique using three different precursors: nickel nitrate, nickel chloride, and nickel acetate on corning glass substrates. X-ray diffraction show that the NiO films are polycrystalline and have a cubic crystal structure, although predominantly with a preferred 111-orientation in the growth direction and a random in-plane orientation. The deconvolution of the Ni 2p and O 1s core level X-ray photoelectron-spectra of nickel oxides produced by using different precursors indicates a shift of the binding energies. The sprayed NiO deposited from nickel nitrate has an optical transmittance in the range of 60-65% in the visible region. The optical band gap energies of the sprayed NiO films deposited from nickel nitrate, nickel chloride and nickel acetate are 3.5, 3.2 and 3.43 eV respectively. Also, the extinction coefficient and refractive index of NiO films have been calculated from transmittance and reflectance measurements. The average value of refractive index for sprayed films by nickel nitrate, nickel chloride and nickel acetate are 2.1, 1.6 and 1.85 respectively. It is revealed that the band gap and refractive index of NiO films by using nickel nitrate corresponds to the commonly reported values. We attribute the observed behavior in the optical band gap and optical constants as due to the change of the Ni/O ratio.
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| 9. |
- Ali Soomro, Razium, et al.
(författare)
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Development of sensitive non-enzymatic glucose sensor using complex nanostructures of cobalt oxide
- 2015
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier. - 1369-8001 .- 1873-4081. ; 34, s. 373-381
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Tidskriftsartikel (refereegranskat)abstract
- The study reports the synthesis of cobalt oxide (Co3O4) nanostructures and their application in enzyme free electrochemical sensing of glucose. The synthesized nanostructures were elaborately characterized via number of analytical techniques including scanning electron microscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The as-synthesized nanostructures of Co3O4 were found to exhibited nanodisc like morphology with the size dimension in range of 300-500 nm. The obtained morphological features were evaluated for their electrochemical potential towards oxidation of glucose which enabled development of sensitive (27.33 mu A mM(-1) cm(-2)), and stable enzyme free glucose sensor. In addition, the developed sensor showed excellent linearity (r(2)=0.9995), wide detection range (0.5-5.0 mM), lower detection limit (0.8 mu M) and extreme selectivity towards glucose in the presence of common interferents like dopamine (DP), ascorbic acid (AA) and uric acid (UA). The successfully application of developed sensor for real blood glucose analysis further reflects its capability for routine glucose measurement.
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| 10. |
- Alinejadian, Navid, et al.
(författare)
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Progress in additive manufacturing of MoS2-based structures for energy storage applications - A review
- 2022
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 139
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Forskningsöversikt (refereegranskat)abstract
- Investigation of next-generation manufacturing methods for the processing of functional materials and offering products with improved performance/functionalities has always been a challenge in terms of energy efficiency, cost-effectiveness, and eco-friendliness. Additive manufacturing (AM) attributes to rapid prototyping techniques that provide new opportunities to test new concepts and design complex 3D structures from metals, ceramics, and composites. Moreover, as a well-known transition metal dichalcogenide, Molybdenum disulfide (MoS2) is a two-dimensional (2D) material with outstanding electrochemical, physical, and mechanical properties that make it a potential candidate for energy storage electrodes via intercalation of different H+, Li+, Na+, and K+ cations. In this review, we discuss the existing conventional MoS2-processing methodologies and compare them with the novel additive manufacturing processes (especially laser-based powder bed fusion). The authors are convinced that the processing of prominent MoS2-based functional structures by the novel additive manufacturing processes can provide complex structures for different electrochemical applications, particularly for energy conversion/ storage systems.
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