| 1. |
- Dey, Anil, et al.
(författare)
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15 nm diameter InAs nanowire MOSFETs
- 2011
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Ingår i: [Host publication title missing]. - 1548-3770. ; , s. 21-22
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Konferensbidrag (refereegranskat)abstract
- InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm.
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| 2. |
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| 3. |
- Dey, Anil, et al.
(författare)
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GaSb nanowire pFETs for III-V CMOS
- 2013
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Ingår i: IEEE Device Research Conference. Proceedings. - 1548-3770. ; , s. 13-14
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Konferensbidrag (refereegranskat)
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| 4. |
- Dey, Anil, et al.
(författare)
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High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- 2012
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Ingår i: Device research conference. - 1548-3770. ; , s. 205-206
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Konferensbidrag (refereegranskat)abstract
- Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density (Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb nanowire TFETs, which exhibit record-high on-current levels.
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| 5. |
- Egard, Mikael, et al.
(författare)
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Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
- 2010
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Ingår i: Device Research Conference (DRC), 2010. - 1548-3770. ; , s. 161-162
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Konferensbidrag (refereegranskat)abstract
- We report on a gated tunnel diode (GTD) and its operation in a 60 GHz pulsed oscillator, also known as a wavelet generator. The wavelet generator operates with the aid of a reactive bias stabilizing network, which minimizes the DC power consumption. This allows for 60 GHz wavelets as short as 56 ps to be produced, with a corresponding energy consumption of 1.0 pJ, which is a factor of 3.6 lower as compared to earlier results. The operation of the GTD is described by a small signal equivalent model deduced from S-parameter measurements.
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| 6. |
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| 7. |
- Lind, Erik, et al.
(författare)
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Resonant tunneling permeable base transistor based pulsed oscillator
- 2004
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Ingår i: Device Research Conference - Conference Digest, DRC. - 1548-3770. ; , s. 129-130
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Konferensbidrag (refereegranskat)abstract
- A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm2. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator.
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| 8. |
- Mo, Jiongjiong, et al.
(författare)
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In GaAs MOSFETs with InP Drain
- 2014
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Ingår i: 2014 72nd Annyal Device Research Conference (DRC). - 1548-3770. ; , s. 119-120
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Konferensbidrag (refereegranskat)
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| 9. |
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