| 1. |
- Gavell, Marcus, 1981, et al.
(författare)
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A 53 GHz single chip receiver for geostationary atmospheric measurements
- 2011
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Ingår i: 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011. - 1550-8781. - 9781612847122
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Konferensbidrag (refereegranskat)abstract
- This paper presents the design and characterization of a multifunctional receiver with integrated x4 frequency multiplier for the LO generation, image reject mixer and low noise amplifier into a single chip MMIC. Noise figure has been measured to 4.6 dB and power consumption to 140 mW. The image rejection is better than 47 dB, conversion gain 10 dB and IIP3 -12 dBm. This performance is far superior to any comparable existing published 53 GHz receiver. The process used is commercially available 0.15 μm GaAs mHEMT technology featuring ft=120 GHz and fmax=200 GHz.
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| 2. |
- Zirath, Herbert, 1955, et al.
(författare)
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An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator
- 2011
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Ingår i: 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011. - 1550-8781. - 9781612847122
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Konferensbidrag (refereegranskat)abstract
- An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate in an 'in-house process' at Chalmers University of Technology.
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| 3. |
- Axelsson, Olle, 1986, et al.
(författare)
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Highly linear gallium nitride MMIC LNAs
- 2012
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Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295
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Konferensbidrag (refereegranskat)abstract
- In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are presented. The focus of the designs is to achieve good linearity at low power consumption and acceptable noise figure. The first design achieves an OIP3/PDC of 12 using traditional LNA design techniques. In a second design, the OIP3 is improved by 2 dB, raising OIP3/PDC to 19, among the highest figures reported for GaN LNAs. This is achieved by using both inductive source feedback and drain-gate RC feedback.
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| 4. |
- Carpenter, Sona, 1983, et al.
(författare)
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A highly integrated chipset for 40 Gbps wireless D-band communication based on a 250 nm InP DHBT technology
- 2014
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Konferensbidrag (refereegranskat)abstract
- A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.
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| 5. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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Highly integrated E-band direct conversion receiver
- 2012
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Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295
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Konferensbidrag (refereegranskat)abstract
- This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.
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| 6. |
- Gavell, Marcus, 1981, et al.
(författare)
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A fundamental upconverting Gilbert mixer for 100 GHz wireless applications
- 2010
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Ingår i: Compound Semiconductor Integrated Circuit Symposium (CSICS), 3-6 Oct. 2010, Monterey, CA. - 1550-8781. - 9781424474370 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- The design and characterization of an up-converting double balanced Gilbert cell mixer in a 0.5 µm InP DHBT process for applications in the 81-102 GHz range is presented. The process features a 4-metal layer stackup that invites to more complex designs compared to most III-V technologies. The presented mixer is a double balanced Gilbert cell design and includes an LO buffer amplifier as well as RF and LO Marchand baluns integrated on chip. The Gilbert cell mixer show excellent results in terms of; conversion gain of 13 dB, LO-RF isolation of 47 dB, output P1dB equals -10 dBm and the total power consumption is 170 mW. The frequency bandwidth covers 81 to 102 GHz.
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| 7. |
- Gavell, Marcus, 1981, et al.
(författare)
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An Image Reject Mixer for High-Speed E-band (71-76, 81-86 GHz) Wireless Communication
- 2009
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Ingår i: Compound Semiconductor Integrated Circuit Symposium, Oct. 2009, Greensboro, NC. - : IEEE. - 1550-8781. - 9781424451913 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- In this paper, the design and characterization of a broadband image reject mixer for the next generation of point-to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 μm gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76 and 81-86 GHz). Performance peaks at 77 GHz with conversion loss of 7 dB and image rejection of 40 dB. Furthermore, these results have been achieved with a LO power requirement of 4 dBm. To the best of the authors' knowledge this is the first reported image reject mixer suitable for the full E-band. ©2009 IEEE.
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| 8. |
- Karandikar, Yogesh, 1982, et al.
(författare)
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A compact 340 GHz 2x4 patch array with integrated subharmonic gilber core mixer as a building block for multi-pixel imaging frontends
- 2014
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Konferensbidrag (refereegranskat)abstract
- For linear multi-pixel imaging systems, a linear stack of pixels comprising of an antenna and a heterodyne receiver are needed. Such pixels can be realized using MMIC processes. The main constraint for such multi-pixel system is a compact array of pixels giving high coupling to quasi-optics used for focusing. This paper addresses this trade-off and presents a novel solution based on beam synthesis of two consecutive subarrays. One such sub-array along with heterodyne receiver is described as half-pixel in this paper and it is realized using 2x4 patch array and Gilbert core sub-harmonic mixer using a 250nm DHBT process. The patch array has ohmic loss better than 8 dB and mixer conversion loss is 6-8 dB over 320-350 GHz RF band. The chip size is 1mm x 2mm and therefore for 7 simultaneous beams a MMIC of 8 half-pixels is foreseen.
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| 9. |
- Karandikar, Yogesh, 1982, et al.
(författare)
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Compact integration of sub-harmonic resistive mixer with differential double slot antenna in G-band using 50nm InP-HEMT MMIC process
- 2012
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Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295
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Konferensbidrag (refereegranskat)abstract
- Sub-Harmonic resistive HEMT based mixers in Gband have been designed and integrated with Double Slot Antenna in Differential Configuration for the first time. This novel topology shows compact integration of active devices between antenna ports while achieving 25 GHz bandwidth around 200 GHz. The dual-gate 50nm x 15um InP HEMT used in the design achieves the conversion loss of 15 dB with +3 dBm LO power drive. Furthermore, a similar topology when used as a Harmonic mixer using a single gate device offers 16.5 dB conversion loss for +4 dBm LO power. For compact integration, via hole matching on slot antenna is also presented.
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| 10. |
- Kjellberg, Torgil, 1962, et al.
(författare)
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A Compact Cascode Power Amplifier in 45-nm CMOS for 60-GHz Wireless Systems
- 2009
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Ingår i: 2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009. - 1550-8781. - 9781424452606 ; , s. 95-98
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Konferensbidrag (refereegranskat)abstract
- This paper presents a power amplifier in 45nm CMOS technology operating in the 50 to 60-GHz frequency range. It uses a single-ended topology with two cascode stages. A gain of 19.6 dB is obtained at 54 GHz where the gain peaks, and 17 dB at 60 GHz. The measured output-referred 1-dB compression point is 8.7 dBm at 60 GHz and a supply voltage of 2.1 V, and the saturated output power is 13.5 dBm. The bias conditions are shown to be reliable through lifetime measurements. The active chip-area measures 160 mu m x 110 mu m.
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