| 1. |
- Engström, Olof, 1943, et al.
(författare)
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Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties
- 2014
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Ingår i: 44th European Solid-State Device Research Conference, ESSDERC 2014, Palazzo del CasinoVenezia Lido, Italy, 22-26 September 2014. - 1930-8876. - 9781479943784 ; , s. 369-372
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Konferensbidrag (refereegranskat)abstract
- A method for extracting energy band alignment of metal/high-k oxide/semiconductor structures from internal photoemission experiments is discussed by modeling the excitation and relaxation processes taking place in the semiconductor at photon irradiation. Classical literature data on photoemission of electrons from silicon and germanium surfaces into vacuum is compared with more recently published data on HfO2/Si and HfO2/Ge structures to identify characteristic features of photoelectric yield. We find that a dominating structure of such spectra, which often has been assumed to originate from the oxide barrier, derives from the energy dependence of absorption coefficient and mean free paths of excited electrons. Our results indicate that most IPE data on high-k oxide/silicon and germanium structures need re-interpretation.
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| 2. |
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| 3. |
- Johansson, Sofia, et al.
(författare)
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Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
- 2013
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Ingår i: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC). - 1930-8876. ; , s. 53-56
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Konferensbidrag (refereegranskat)abstract
- The significant defect-induced increase in transconductance at high frequencies in some III-V MOSFETs is utilized to reveal the spatial distribution and energy profile of traps in the gate dielectric. The frequency response of the border traps is modeled as a distributed RC network inserted in the small signal model. Surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-k gate dielectric are evaluated; especially the effects of inserting an InP cap layer in the gate stack.
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| 4. |
- Raeissi, Bahman, 1979, et al.
(författare)
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Electron traps at HfO2/SiOx interfaces
- 2008
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Ingår i: Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK. - 1930-8876. - 9781424423637 ; , s. 130-133
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Konferensbidrag (refereegranskat)abstract
- Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.
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| 5. |
- Rorsman, Niklas, 1964, et al.
(författare)
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Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate
- 1993
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Ingår i: 23rd European Solid State Device Research Conference, ESSDERC 1993. - 1930-8876. - 9782863321355 ; , s. 765-768
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Konferensbidrag (refereegranskat)abstract
- InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively. The In0.8Ga 0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively
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| 6. |
- Yousif, M. Y. A., 1963, et al.
(författare)
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HfO2 for strained-Si and strained-SiGe MOSFETs
- 2003
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Ingår i: ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. - 1930-8876. - 0780379993 ; , s. 255-
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Konferensbidrag (refereegranskat)abstract
- We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage
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