| 1. |
- Akbari, Maryam, et al.
(författare)
-
An Ultra-compact Pure Magnetic Arbiter PUF with High Reliability and Low Power Consumption
- 2023
-
Ingår i: IEEE transactions on nanotechnology. - Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 22, s. 449-456
-
Tidskriftsartikel (refereegranskat)abstract
- Due to the rugged environmental factors in IoT applications and constrained on-chip resources, PUF, as a critical hardware primitive, is a promising solution for key storage, authentication, and ID generation. The existing CMOS-based Arbiter PUFs mainly suffer from low reliability and vulnerability against modeling attacks. In this paper, the proposed PUF utilizes mCell devices, a class of Magnetoresistive devices employing only Magnetic Tunnel Junction (MTJ) devices, as a building block. Also, a novel nonvolatile latch is proposed to act as an arbiter and generates the responses by comparing the current values instead of delays which leads to increased the reliability by subtracting the constant variation rates of MTJs under environmental variation without adding hardware overhead. The characteristics of MTJ like nonvolatility, stochastic switching, chaotic magnetization, low power consumption, and low occupied area have made the proposed PUF to a low power, highly reliable, high randomness and ultra-compact pure magnetic arbiter PUF. The Monte Carlo HSPICE simulation results reveal that the uniformity, uniqueness, bit-aliasing, power consumption, and area of the proposed PUF are 49.24 %, 49.87 %, 48.64 %, 10.771 μW and 0.106 μm2, respectively. In addition, the average BER across a wide temperature range (-50∘ C 150∘ C) and voltage range (0.05 V-0.1 V) is 0.08 % and 0.18 %, respectively. © IEEE
|
|
| 2. |
- Albertsson, Dagur Ingi, et al.
(författare)
-
A Magnetic Field-to-Digital Converter Employing a Spin-Torque Nano-Oscillator
- 2020
-
Ingår i: IEEE transactions on nanotechnology. - : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 19, s. 565-570
-
Tidskriftsartikel (refereegranskat)abstract
- In this work, a novel magnetic field-to-digital converter based on emerging spin-torque nano-oscillators (STNOs) is proposed. The architecture is inspired by voltage controlled oscillator (VCO)-based analog-to-digital converters (ADCs) which have shown inherent first-order noise shaping of both quantization- and phase-noise without the need for feedback. In the proposed architecture, the STNO acts both as a magnetic field sensor and VCO. The architecture's performance is evaluated in terms of signal-to-noise and distortion ratio (SNDR) utilizing Verilog-AMS modeling, where a macrospin model fitted to experimental data is employed for accurate description of the STNO operation. The presented simulation results demonstrate the potential of the STNO-based magnetic field-to-digital converter architecture.
|
|
| 3. |
- Albertsson, D. I., et al.
(författare)
-
A Magnetic Field-to-Digital Converter Employing a Spin-Torque Nano-Oscillator
- 2020
-
Ingår i: Ieee Transactions on Nanotechnology. - : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 19, s. 565-570
-
Tidskriftsartikel (refereegranskat)abstract
- In this work, a novel magnetic field-to-digital converter based on emerging spin-torque nano-oscillators (STNOs) is proposed. The architecture is inspired by voltage controlled oscillator (VCO)-based analog-to-digital converters (ADCs) which have shown inherent first-order noise shaping of both quantization- and phase-noise without the need for feedback. In the proposed architecture, the STNO acts both as a magnetic field sensor and VCO. The architecture's performance is evaluated in terms of signal-to-noise and distortion ratio (SNDR) utilizing Verilog-AMS modeling, where a macrospin model fitted to experimental data is employed for accurate description of the STNO operation. The presented simulation results demonstrate the potential of the STNO-based magnetic field-to-digital converter architecture.
|
|
| 4. |
- Fransson, Jonas, et al.
(författare)
-
A physical compact model for electron transport across single molecules
- 2006
-
Ingår i: IEEE transactions on nanotechnology. - 1536-125X .- 1941-0085. ; 5:6, s. 745-749
-
Tidskriftsartikel (refereegranskat)abstract
- Prediction of current flow across single molecules requires ab initio electronic structure calculations along with their associated high computational demand, and a means for incorporating open system boundary conditions to describe the voltage sources driving the current. To date, first principle predictions of electron transport across single molecules have not fully achieved a predictive capability. The situation for molecular electronics may be compared to conventional technology computer-aided design (TCAD), whereby various approximations to the Boltzmann transport equation are solved to predict electronic device behavior, but in practice are too time consuming for most circuit design applications. To simplify device models for circuit design, analytical but physically motivated models are introduced to capture the behavior of active and passive devices; however, similar models do not vet exist for molecular electronics. We follow a similar approach by evaluating an analytical model achieved by combining a mesoscopic transport model with parameterizations taken from quantum chemical calculations of the electronic structure of single molecule bonded between two metal contacts. Using the model to describe electron transport across benzene- 1,4-dithiol and by comparing to experiment, we are able to extract the coupling strength of the molecule attached to two infinite metal electrodes. The resulting procedure allows for accurate and computationally efficient modeling of the static (dc) characteristics of a single molecule, with the added capability of being able to study the physical model parameter variations across a range of experiments. Such simple physical models are also an important step towards developing a design methodology for molecular electronics.
|
|
| 5. |
- Jänis, Anna, 1970, et al.
(författare)
-
Dielectric Properties of SiC nanowires With Different Chemical Compositions
- 2011
-
Ingår i: IEEE Transactions on Nanotechnology. - 1941-0085 .- 1536-125X. ; 10:4, s. 751-756
-
Tidskriftsartikel (refereegranskat)abstract
- The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.
|
|
| 6. |
- Kish, Laszlo B., et al.
(författare)
-
Fluctuation-Enhanced Sensing for Biological Agent Detection and Identification
- 2011
-
Ingår i: IEEE transactions on nanotechnology. - 1536-125X .- 1941-0085. ; 10:6, s. 1238-1242
-
Tidskriftsartikel (refereegranskat)abstract
- We survey and show our earlier results about three different ways of fluctuation-enhanced sensing of bio agent, 1) the phage-based method for bacterium detection published earlier; 2) sensing and evaluating the odors of microbes; and 3) spectral and amplitude distribution analysis of noise in light scattering to identify spores based on their diffusion coefficient.
|
|
| 7. |
- Kolahdouz, Mohammadreza, et al.
(författare)
-
Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
- 2009
-
Ingår i: IEEE transactions on nanotechnology. - : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 8:3, s. 291-297
-
Tidskriftsartikel (refereegranskat)abstract
- The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
|
|
| 8. |
- Kolahdouz, Mohammadreza, et al.
(författare)
-
Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
- 2009
-
Ingår i: IEEE transactions on nanotechnology. - : IEEE. - 1536-125X .- 1941-0085. ; 8:3, s. 291-297
-
Tidskriftsartikel (refereegranskat)abstract
- The influence of chip layout and architecture on thepattern dependency of selective epitaxy of B-doped SiGe layers hasbeen studied. The variations of Ge-, B-content, and growth ratehave been investigated locally within a wafer and globally fromwafer to wafer. The results are described by the gas depletion theory.Methods to control the variation of layer profile are suggested.
|
|
| 9. |
- Kumar, Ravinder, et al.
(författare)
-
A Surface Modification Approach to Overcome Wetting Behavior of Gallium-Based Liquid Metal Droplets
- 2022
-
Ingår i: IEEE Transactions on Nanotechnology. - 1941-0085 .- 1536-125X. ; 21, s. 158-162
-
Tidskriftsartikel (refereegranskat)abstract
- Gallium based eutectic alloys are one of the promising substitutes for mercury. These alloys are nontoxic and environment friendly and have similar or equivalent properties as that of mercury. These alloys exhibit good electrical and thermal properties. However, these alloys form oxides when in contact with oxygen atoms. Due to this, the material surface tension changes, which renders them unsuitable for those applications where the mobility of the fluid is a valuable factor, such as in thermometers and blood pressure monitoring devices. There are few methods reported to remove the oxide layer from the surface of the gallium-based alloys, like acid and base treatment prior to use, but all these methods are not durable and long-lasting. Here in this work, we report gallium oxide coating as a simple approach to convert mercury manometer glass tube, which has glass as a substrate to a nonwetting surface against surface-oxidized gallium-based liquid metal alloys. These alloys form an oxidized layer in ambient air (O-2 >1 ppm) and show stickiness to almost all surfaces that impact the residue-free movement of the liquid metal droplets. Herein, the physical vapor deposition technique was used for gallium oxide coating on substrates such as silicon wafer and glass slide. Moreover, various characterizations were carried out to support our outcomes. This method does not require any micro/nano machining or specific nanoscale surface topology. The contact angle was measured with or without coated gallium oxide film on the glass substrate, and the static contact angle (c.a.) 137.69 degrees and with bared glass 94.30 degrees.
|
|
| 10. |
- Kyaw, Htet Htet, et al.
(författare)
-
One-Diode Model Equivalent Circuit Analysis for ZnO Nanorod-Based Dye-Sensitized Solar Cells : Effects of Annealing and Active Area
- 2012
-
Ingår i: IEEE transactions on nanotechnology. - : IEEE. - 1536-125X .- 1941-0085. ; 11:4, s. 763-768
-
Tidskriftsartikel (refereegranskat)abstract
- Electrical characteristics of 1-D zinc oxide (ZnO) nanorod-based dye-sensitized solar cells (DSSCs) were experimentally measured and followed by theoretical analysis using simple one-diode model. Defect sites (mostly oxygen vacancies) in ZnO are typically responsible for lower DSSC performance, which are removed by annealing the ZnO nanorods at high temperatures up to 450 C. The DSSC performances with respect to the different annealing temperatures (250 °C, 350 °C, and 450°C) were determined by measuring their I-V characteristics at 1-sun irradiation (AM 1.5G). The variations in series and shunt resistances of DSSC were estimated by fitting the experimental I-V characteristics with the ideal I-V curve obtained from the one-diode equivalent model of the DSSC. By increasing annealing temperature, reduction in the series resistance R s of the DSSCs with a subsequent increase in the shunt resistance R sh was obtained. Annealing temperature of 350 C was found to be optimum at which maximum DSSC performances with 1-cm 2 cell active area showing minimum R s (0.02 kΩ) with high R sh (1.08 kΩ) values were observed. Reduction in the active area of the DSSCs from 1 to 0.25 cm 2 and further to 0.1 cm 2 demonstrated improved device performance with ∼56% and ∼24% enhancement in the fill factor and open-circuit voltage V oc, respectively, due to the reduced sheet resistance and lower recombination rate resulting low series resistance and high shunt resistance, respectively. At the optimum annealing temperature, maximum DSSC efficiency of 4.60 was obtained for the 0.1-cm 2 cell active area.
|
|
