| 1. |
- Barankova, Hana, et al.
(författare)
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Amorphous Carbon Coatings on Glass for High Voltage Protection
- 2022
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8769 .- 2162-8777. ; 11:5
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Tidskriftsartikel (refereegranskat)abstract
- Radio frequency Hollow Cathode based hybrid process integrating both Physical Vapor Deposition and Plasma Enhanced Chemical Vapor Deposition was used for deposition of amorphous carbon on glass samples. The films were subjected to high voltage pulses and the performance was compared with uncoated glass samples to test the protection ability of the films, the ability to prevent the deteriorating effects of corona flashovers/arcs. In contrast to the uncoated glass the well adherent carbon films with thicknesses between 3.5 and 17 mu m exhibited an excellent protection of the glass substrate against the flashovers/arc damages in both polarities of the electric field with voltages up to 300 kV.
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| 2. |
- Cheng, Jie, et al.
(författare)
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Preparation of Surface Modified Ceria Nanoparticles as Abrasives for the Application of Chemical Mechanical Polishing (CMP)
- 2020
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Ingår i: ECS Journal of Solid State Science and Technology. - : ELECTROCHEMICAL SOC INC. - 2162-8769 .- 2162-8777. ; 9:2
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Tidskriftsartikel (refereegranskat)abstract
- In this study, a method to improve the chemical mechanical polishing (CMP) performance of ceria as abrasive particles was proposed. Surface doping of ceria nanoparticles was realized by incipient impregnation method, in order to improve its valance change properties (Ce3+/Ce4+). This study presents detailed characterization of the lanthanide-doped CeO2 by both experimental methods and density functional theory (DFT) calculation. The dispersion stability of the doped ceria nanoparticles in CMP slurries are investigated. Results show that the doped CeO2 nanoparticles exhibit more oxygen vacancies and higher content of Ce3+ compared with the pristine CeO2. Good dispersion stability of the doped CeO2 nanoparticles could be achieved by adding dispersants in the CMP slurries.
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| 3. |
- Jian, Jhang-Jie, et al.
(författare)
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Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer
- 2021
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8777 .- 2162-8769. ; 10:5
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Tidskriftsartikel (refereegranskat)abstract
- In this work, an atomic layer deposition system was used to deposit Al2O3 high-k dielectric film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). By using the Al2O3 gate dielectric layer, compared to planar channel structure, the direct current, high frequency, and flicker noise performances were improved in the GaN-based MOSHEMTs with fin-nanochannel array. For the GaN-based 80-nm-wide fin-nanochannel array MOSHEMTs, they exhibited superior performances of maximum extrinsic transconductance of 239 mS mm(-1), threshold voltage of -0.4 V, unit gain cutoff frequency of 7.3 GHz, maximum oscillation frequency of 14.1 GHz, normalized noise power of 2.5 x 10(-14) Hz(-1), and Hooge's coefficient of 1.4 x 10(-6). The enhanced performances were attributed to the features of fin-nanochannel array of better gate control capability, enhanced pinch-off effect, and better heat dissipation driven by lateral heat flow within the space between fin-channels.
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| 4. |
- Pedersen, Henrik, et al.
(författare)
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Perspective-Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC
- 2020
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Ingår i: ECS Journal of Solid State Science and Technology. - : ELECTROCHEMICAL SOC INC. - 2162-8769 .- 2162-8777. ; 9:10
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The deposition rate of silicon carbide (SiC) in chemical vapor deposition (CVD) can be boosted by addition of chlorine. This has been explored and applied for hard coatings and electronic grade SiC. We briefly summarize the recent research done in the field of SiC CVD and discuss the understanding of the CVD chemistry with addition of halides. We seek to improve a previous statement that SiCl(2)is the main silicon species for growth of SiC. Recent experiments and modeling suggest that SiCl2, and its fluorinated and brominated analogues, are inactive and that SiF/SiCl/SiBr are the main halogenated species for growth.
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| 5. |
- Vali, Mehran, et al.
(författare)
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A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon
- 2021
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Ingår i: ECS Journal of Solid State Science and Technology. - : Electrochemical Society. - 2162-8769 .- 2162-8777. ; 10:9
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Tidskriftsartikel (refereegranskat)abstract
- We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists of two (AGNR) electrodes with zigzag termination that are separated by a narrow gap. The Fermi level of two electrodes is controlled with a common back gate. The main idea is based on taking advantage of the electronic effects of smooth edge atoms of (AGNR) and investigating the effect of applied small uniaxial tensile strain and gate voltage on the output characteristics of simulated TFET. Our analysis shows that the simulated device will have a pronounced negative differential conductance high peak to valley ratio at room temperature. We see that by applying the uniaxial tensile strain, this ratio upgrades to 70 for (AGNR) with width N = 13.
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| 6. |
- Vali, Mehran, et al.
(författare)
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Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor
- 2023
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Ingår i: ECS Journal of Solid State Science and Technology. - : Institute of Physics (IOP). - 2162-8769 .- 2162-8777. ; 12:2
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Tidskriftsartikel (refereegranskat)abstract
- According to the effect of the interlayer interaction of the boron nitride sheet on electronic properties, especially the energy band gap of the graphene sheet in the boron nitride-graphene (BN-G) bilayer, we propose a gapless graphene-based field effect transistor (FET). It is comprised of a boron nitride layer on top of graphene in the channel region. In this study, we investigate the transfer characteristic and output characteristic of the proposed device for different values of the interlayer distance of (BN-G) bilayer. Also, we compare the output results with simulated bilayer graphene channel FET. We find that the I-on/I-off ratio in the proposed device shows a significant promotion compared to graphene bilayer channel FET. Our first-principles calculations show that by decreasing the inter-layer distance of (BN-G) bilayer, the energy gap increase which leads to a dipper I-off current and an increase of I-on/I-off ratio up to 104 for an inter-layer distance of 2.7 angstroms. Moreover, it is found that the proposed device output characteristic displays a very good saturation due to improved pinch-off of the channel.
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| 7. |
- Yangui, Aymen, 1987, et al.
(författare)
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Phosphor Thermometry of Alumina-Forming High-Temperature Alloys Using Luminescent Rare-Earth Ions in YAG: Proof of Concept Using a Dispersion of Ce 3+ -Doped YAG Particles in a FeCrAl Alloy
- 2023
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8777 .- 2162-8769. ; 12:3
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Tidskriftsartikel (refereegranskat)abstract
- Most high-temperature processes require monitoring and controlling temperature, preferably with high precision and good lateral resolution. Here we evaluate the use of the technique commonly known as phosphor thermometry, which exploits the temperature dependent photoluminescence from an inorganic phosphor, for the determination of the temperature of a composite material consisting of the metallic alloy FeCrAl dispersed with phosphor particles of yttrium aluminum garnet (Y3Al5O12, YAG) doped with a small amount of luminescent Ce3+ ions (YAG:Ce3+). The results show that with some optimization and by changing the dopant ion, YAG based phosphor particles offer a unique opportunity to measure the surface temperature of metal alloys with high precision and high lateral resolution, all the way up to the maximum working temperature of alumina-forming high temperature alloys at ca. 1300 °C.
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| 8. |
- Yin, X., et al.
(författare)
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Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1-xGex
- 2020
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Ingår i: ECS Journal of Solid State Science and Technology. - : Institute of Physics Publishing. - 2162-8769 .- 2162-8777. ; 9:3
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Tidskriftsartikel (refereegranskat)abstract
- The lateral and vertical gate-all-around (GAA) field-effect transistors are considered the most promising candidates for next generation logic device at and beyond 3-nm technology node. SiGe plays an important role in these devices as the sacrificial layer or channel material and needs isotropic etching. In this paper, an advanced etching process termed quasi atomic layer etching (qALE) is developed with advantages of controllable etch rate and atomically smooth surfaces. The qALE of SiGe is based on wet chemical etching, in which H2O2 is applied to oxidate the surface with cyclic manner, and diluted buffered oxide etchant (dBOE) is applied to remove the oxide. The profiles of SiGe qALE for quasi-self-limited behavior, etch rate and the effect in concentration and temperature of H2O2 have been studied. The etch per cycle (EPC) of Si0.7Ge0.3 is 0.50 nm and the etching selectivity between Si0.7Ge0.3 and heavily p-type doped silicon is 4.99 in Si/SiGe/Si stacked layers with (110) sidewall. The etch rate and the selectivity are influenced by Ge fraction of SiGe and the boron doping in Si. The root mean square (RMS) roughness after 60 cycles qALE is 0.183 nm indicating atomically smooth surfaces. Finally, the application of qALE for vertical nanowire compared with wet continuous etching is discussed in this work. © 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
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| 9. |
- Zurauskaite, Laura, et al.
(författare)
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Process Conditions for Low Interface State Density in Si-passivated Ge Devices with TmSiO Interfacial Layer
- 2020
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8769 .- 2162-8777. ; 9:12
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Tidskriftsartikel (refereegranskat)abstract
- In this work we study the epitaxial Si growth with Si2H6 for Ge surface passivation in CMOS devices. The Si-caps are grown on Ge in the hydrogen desorption limited regime at a nominal temperature of 400 degrees C. We evaluate the process window for the interface state density and show that there is an optimal Si-cap thickness between 8 and 9 monolayers for D-it < 510(11) cm(-2) eV(-1). Moreover, we discuss the strong impact of the Si-cap growth time and temperature on the interface state density, which arises from the Si thickness dependence on these growth parameters. Furthermore, we successfully transfer a TmSiO/Tm2O3/HfO2 gate stack process from Si to Ge devices with optimized Si-cap, yielding interface state density of 310(11) eV(-1) cm(-2) and a significant improvement in oxide trap density compared to GeOx passivation.
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| 10. |
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