| 1. |
- Abay, Simon, 1980, et al.
(författare)
-
Charge transport in InAs nanowire Josephson junctions
- 2014
-
Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969 .- 1098-0121. ; 89:21, s. 214508-
-
Tidskriftsartikel (refereegranskat)abstract
- We present an extensive experimental and theoretical study of the proximity effect in InAs nanowires connected to superconducting electrodes. We fabricate and investigate devices with suspended gate-controlled nanowires and nonsuspended nanowires, with a broad range of lengths and normal-state resistances. We analyze the main features of the current-voltage characteristics: the Josephson current, excess current, and subgap current as functions of length, temperature, magnetic field, and gate voltage, and compare them with theory. The Josephson critical current for a short-length device, L = 30 nm, exhibits a record high magnitude of 800 nA at low temperature that comes close to the theoretically expected value. The critical current in all other devices is typically reduced compared to the theoretical values. The excess current is consistent with the normal resistance data and agrees well with the theory. The subgap current shows a large number of structures; some of them are identified as subharmonic gap structures generated by multiple Andreev reflection. The other structures, detected in both suspended and nonsuspended devices, have the form of voltage steps at voltages that are independent of either the superconducting gap or length of the wire. By varying the gate voltage in suspended devices, we are able to observe a crossover from typical tunneling transport at large negative gate voltage, with suppressed subgap current and negative excess current, to pronounced proximity junction behavior at large positive gate voltage, with enhanced Josephson current and subgap conductance as well as a large positive excess current.
|
|
| 2. |
- Abergel, David, et al.
(författare)
-
Infrared absorption of closely aligned heterostructures of monolayer and bilayer graphene with hexagonal boron nitride
- 2015
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : AMER PHYSICAL SOC. - 1098-0121 .- 1550-235X. ; 92:11
-
Tidskriftsartikel (refereegranskat)abstract
- We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely aligned crystal lattices. We show that perturbations with different spatial symmetry can lead to similar absorption spectra. We suggest that a study of the absorption spectra as a function of the doping for an almost completely full first miniband is necessary to extract meaningful information about the moire characteristics from optical absorption measurements and to distinguish between various theoretical proposals for the physically realistic interaction. Also, for bilayer graphene, the ability to compare spectra for the opposite signs of electric-field-induced interlayer asymmetry might provide additional information about the moire parameters.
|
|
| 3. |
- Adell, Johan, et al.
(författare)
-
Formation of epitaxial MnBi layers on (Ga,Mn)As
- 2009
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121 .- 2469-9950 .- 2469-9969. ; 80:7
-
Tidskriftsartikel (refereegranskat)abstract
- The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
|
|
| 4. |
|
|
| 5. |
- Alling, Björn, et al.
(författare)
-
Dynamic and structural stability of cubic vanadium nitride
- 2015
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 91:5, s. 054101-
-
Tidskriftsartikel (refereegranskat)abstract
- Structural phase transitions in epitaxial stoichiometric VN/MgO(011) thin films are investigated using temperature-dependent synchrotron x-ray diffraction (XRD), selected-area electron diffraction (SAED), resistivity measurements, high-resolution cross-sectional transmission electron microscopy, and ab initio molecular dynamics (AIMD). At room temperature, VN has the B1 NaCl structure. However, below T-c = 250 K, XRD and SAED results reveal forbidden (00l) reflections of mixed parity associated with a noncentrosymmetric tetragonal structure. The intensities of the forbidden reflections increase with decreasing temperature following the scaling behavior I proportional to (T-c - T)(1/2). Resistivity measurements between 300 and 4 K consist of two linear regimes resulting from different electron/phonon coupling strengths in the cubic and tetragonal-VN phases. The VN transport Eliashberg spectral function alpha F-2(tr)(h omega), the product of the phonon density of states F(h omega) and the transport electron/phonon coupling strength alpha(2)(tr)(h omega), is determined and used in combination with AIMD renormalized phonon dispersion relations to show that anharmonic vibrations stabilize the NaCl structure at T greater than T-c. Free-energy contributions due to vibrational entropy, often neglected in theoretical modeling, are essential for understanding the room-temperature stability of NaCl-structure VN, and of strongly anharmonic systems in general.
|
|
| 6. |
- Andreasson, Jakob, 1975, et al.
(författare)
-
Electron-lattice interactions in the perovskite LaFe0.5Cr0.5O3 characterized by optical spectroscopy and LDA plus U calculations
- 2009
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 80:7, s. 075103-
-
Tidskriftsartikel (refereegranskat)abstract
- We use resonance Raman scattering (incident photon energies between 1.8 and 4.13 eV), LDA+U calculations, spectroscopic ellipsometry, and oblique IR reflectivity to characterize the strong electron-phonon interactions in the disordered perovskite LaFe0.5Cr0.5O3. When the photon energy coincides with a Cr to Fe Mott-Hubbard transfer gap around 2.4 eV the electron-phonon interaction is manifested by a Franck-Condon effect with exceptional first-and higher order scattering of a local oxygen breathing mode. At higher incident energies we observe a superposition of Franck-Condon scattering and Frohlich interaction induced infrared active longitudinal optical two-phonon scattering activated mainly by O to Fe charge transfer. Our results establish LaFe0.5Cr0.5O3 as a model compound for research on electron-phonon interactions in strongly correlated complex systems and show that Franck-Condon scattering in complex solids is not limited to Jahn-Teller active compounds.
|
|
| 7. |
- Andreasson, Jakob, 1975, et al.
(författare)
-
Electron-phonon interactions in perovskites containing Fe and Cr studied by Raman scattering using oxygen-isotope and cation substitution
- 2008
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 78:23, s. 235103-
-
Tidskriftsartikel (refereegranskat)abstract
- We use temperature-dependent inelastic light scattering to study the origin of the strong multiphonon scattering of a local oxygen breathing mode present in the mixed B-site orthorhombic (space group Pnma) perovskite LaFe0.5Cr0.5O3 but absent in isostructural LaFeO3 and LaCrO3. It is seen that the multiphonon scattering is critically sensitive to the presence of both Fe and Cr ions on the B site. These results support our interpretation that the multiphonon scattering is activated by local electron-phonon interactions according to the Franck-Condon picture following an Fe-Cr charge transfer. Further, O-18 substitution is performed on the x=0, 0.04, and 0.5 compounds and clearly shows that all modes appearing above the first-order phonon-scattering region in these compounds originate from higher-order oxygen stretching vibrations. In particular this is the case for the strong second-order scattering dominating the scattering response in LaFeO3. Accordingly we propose that these modes are generated by infrared-active longitudinal optical (IR LO) two-phonon and combination scattering activated by Frohlich interaction. For x=0.02 and 0.04 the characteristic IR LO two-phonon and Franck-Condon multiphonon-scattering profiles mix. We also study the influence of isovalent cation substitution and Sr doping in AFe(0.5)Cr(0.5)O(3) (A=La, Nd, and Gd) and La1-ySryFe0.5Cr0.5O3-delta (y=0, 0.16, and 0.5) on the strong electron-phonon coupling present in LaFe0.5Cr0.5O3. The Franck-Condon effect in LaFe0.5Cr0.5O3, is not significantly affected by isovalent A-site substitution, despite the increasing orthorhombic distortion associated with decreasing A-site ionic radii. On the contrary, aliovalent Sr doping causes a rapid decrease in the Franck-Condon scattering. This shows that the strong electron-phonon coupling in these compounds is highly sensitive to local lattice and electronic decoherence but insensitive to global lattice distortions. Finally, a preliminary assignment of the A(g) and B-2g phonon modes in AFe(0.5)Cr(0.5)O(3) (A=La, Nd, and Gd) is made based on the present observations and published results for LaCrO3 and AMnO(3). The modes associated with oxygen octahedral tilt and bending vibrations are heavily influenced by the magnitude of the orthorhombic distortion.
|
|
| 8. |
- Azimi Mousolou, Vahid, et al.
(författare)
-
Spin-electric Berry phase shift in triangular molecular magnets
- 2016
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 94:23
-
Tidskriftsartikel (refereegranskat)abstract
- We propose a Berry phase effect on the chiral degrees of freedom of a triangular magnetic molecule. The phase is induced by adiabatically varying an external electric field in the plane of the molecule via a spin-electric coupling mechanism present in these frustrated magnetic molecules. The Berry phase effect depends on spin-orbit interaction splitting and on the electric dipole moment. By varying the amplitude of the applied electric field, the Berry phase difference between the two spin states can take any arbitrary value between zero and π, which can be measured as a phase shift between the two chiral states by using spin-echo techniques. Our result can be used to realize an electric-field-induced geometric phase-shift gate acting on a chiral qubit encoded in the ground-state manifold of the triangular magnetic molecule.
|
|
| 9. |
- Baker, A M R, et al.
(författare)
-
Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
- 2013
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 87:4, s. 045414-
-
Tidskriftsartikel (refereegranskat)abstract
- Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by similar to 40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of T-e(4) at low temperatures and depend weakly on carrier density proportional to n(-1/2), evidence for enhancement of the energy loss rate due to disorder in CVD samples.
|
|
| 10. |
- Baker, A M R, et al.
(författare)
-
Weak localization scattering lengths in epitaxial, and CVD graphene
- 2012
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 86:23, s. 235441-
-
Tidskriftsartikel (refereegranskat)abstract
- Weak localization in graphene is studied as a function of carrier density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2) using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L-phi, L-i, and L-* on carrier density. We find no significant carrier dependence for L-phi, a weak decrease for L-i with increasing carrier density just beyond a large standard error, and a n(-1/4) dependence for L-*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity. DOI: 10.1103/PhysRevB.86.235441
|
|
