| 1. |
- Abermann, S., et al.
(författare)
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Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics for CMOS technology
- 2007
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Ingår i: Physics of Semiconductors, Pts A and B. - : AIP. - 9780735403970 ; , s. 293-294
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Konferensbidrag (refereegranskat)abstract
- We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-kappa dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.
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| 2. |
- Dagnelund, Daniel, 1980-, et al.
(författare)
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Optically detected cyclotron resonance studies of InGaNAs/GaAs structures
- 2007
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Ingår i: Physics of semiconductors : 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 24-28 July 2006. - : American Institute of Physics (AIP). - 9780735403970 ; , s. 383-384
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on our recent results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well (QW), by the optically detected cyclotron resonance (ODCR) technique. By monitoring photoluminescence (PL) emissions from various layers the predominant ODCR peak is shown to be related to carriers with a 2D character and an effective mass of 0.51 m∗e. The responsible carriers are ascribed to be electrons in GaAs/AlAs superlattices (SL) that are employed in the laser structures to prevent carrier leak by sandwiching the InGaNAs/GaAs QW. This conclusion is based on the following observations: (a) the ODCR peak is only observed in the structures containing the SL; (b) the effective mass value determined by the ODCR peak is independent of In and N compositions; (c) the same ODCR peak is also observed by monitoring PL from the SL. Unfortunately no ODCR signal related to InGaNAs was observed
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| 3. |
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| 4. |
- Gvozdić, Dejan M., et al.
(författare)
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Novel mechanism for order-of-magnitude enhancement of rashba effect in wide modulation-doped quantum wells
- 2007
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Ingår i: Physics of Semiconductors. - : American Institute of Physics (AIP). - 9780735403970 ; , s. 1371-1372
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Konferensbidrag (refereegranskat)abstract
- The Rashba effect leading to subband splitting in quantum wells is frequently taken to be proportional to some average electric field. We here show that taking the spatial variation of the electric field into account gives important effects. In particular we demonstrate that one can apply a moderate electric field to a wide modulation-doped quantum well and get an order-of-magnitude enhancement of the Rashba splitting characteristic of the built-in interface field. For small asymmetry the wave function localization and spin projection of a subband can be rapid functions of the in-plane wave vector.
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| 5. |
- Rigopoulos, N., et al.
(författare)
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Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells
- 2007
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Ingår i: AIP Conference Proceedings. - : AIP. - 0094-243X. - 9780735403970 ; 893, s. 1503-1504
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Konferensbidrag (refereegranskat)abstract
- We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.
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