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Sökning: L773:9780819465924

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1.
  • Aggerstam, Thomas, et al. (författare)
  • GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption
  • 2007
  • Ingår i: Quantum Sensing and Nanophotonic Devices IV. - : SPIE. - 9780819465924 ; 6479, s. 64791E-
  • Konferensbidrag (refereegranskat)abstract
    • We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-mu m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.
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2.
  • Ougazzaden, A., et al. (författare)
  • Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications
  • 2007
  • Ingår i: Quantum Sensing and Nanophotonic Devices IV. - : SPIE. - 9780819465924 ; , s. G4791-G4791
  • Konferensbidrag (refereegranskat)abstract
    • The development of wide band gap semiconductors extends their applications in optoelectronics devices to the UV domain. Compact lasers and high sensitivity APD detectors in UV range are currently needed for different applications such as, purification, covert communication and real time detection of airborne pathogens. Until now, the full exploitation of these potential materials has been limited by the lack of suitable GaN substrates. Recently, a novel class of materials has been reported based on BGaN and BAlN, potentially reducing the crystal defect densities by orders of magnitude compared to existing wide band gap heterostructures. Characteristics of these new alloys are similar to those of AlGaN materials with the advantage that these can be lattice matched to AlN and SiC substrates. In addition, these materials offer the possibility of using quaternary BAlGaN alloys at Ultra Violet (UV) wavelengths and hence lead to more degrees of freedom in designing sophisticated device structures. In this paper we describe the MOVPE growth conditions used to incorporate boron in GaN and AlGaN. Detailed characterization and analysis in terms of structural and electrical properties are discussed.
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