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- Gottlob, H. D. B., et al.
(författare)
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Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics
- 2006
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Ingår i: ESSDERC 2006. - 9781424403011 ; , s. 150-153
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Konferensbidrag (refereegranskat)abstract
- Two process concepts for integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd2O3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.
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