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- Cijvat, Pieternella, et al.
(författare)
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A GaN HEMT power amplifier with variable gate bias for envelope and phase signals
- 2007
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Ingår i: [Host publication title missing]. - Aalborg, Denmark : Institute of Electrical and Electronics Engineers (IEEE). - 9781424415168 ; , s. 108-111
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Konferensbidrag (refereegranskat)abstract
- This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.
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