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- Edwards, Michael, et al.
(författare)
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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
- 2010
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Ingår i: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. - 9781424485758 ; , s. 127-130
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Konferensbidrag (refereegranskat)abstract
- GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.
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| 2. |
- Östling, Mikael
(författare)
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Nanoscaled SiGe based MOSETs
- 2010
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Ingår i: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. - 9781424485758 ; , s. 1-8
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Konferensbidrag (refereegranskat)abstract
- This paper presents an overview of the technological challenges facing the future scaling of device dimensions needed to meet the performance scaling in accordance with Moore's law. A number of performance boosters have to be introduced in order to keep up with the expected performance gain in each new technology node. The introduction of strain engineering is an important feature as well as the implementation of high-k dielectrics. From the 32 nm node and forward there is an urgent search for a fundamental breakthrough to achieve low access resistance to the drain and source areas. This paper will focus to a large extent on this latter area and discuss metallic source/drain (MSD) contacts in nanoscaled MOSFET technology. MSD contacts offer extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. Recently great efforts have been achieved on Pt- and Ni-silicide implementation. A conclusion is that MSD MOSFETs are competitive candidates for future generations of CMOS technology.
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