| 1. |
- Gorelik, Leonid, 1952, et al.
(författare)
-
Suppression of thermal fluctuations of nanomechanical resonator (ground state cooling) by thermally activated electronic flow
- 2011
-
Ingår i: 21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011. - 9781457701924 ; , s. 223-226
-
Konferensbidrag (refereegranskat)abstract
- We consider a doubly clamped suspended metallic carbon nanotube in which extra charge is injected from the tipof a scanning tunneling microscopy (STM). Our analysis shows that the quantum superposition between the different inelastic electronic tunneling paths can be controlled by the bias voltage. In particular, we find that below Coulomb blockade threshold the vibron emission induced by thermally activated electron transportation can be significantly reduced in comparison to the vibron absorption. As a consequence a net suppression of the thermal fluctuations ("cooling") of the vibrational degrees of freedom can be achieved. © 2011 IEEE.
|
|
| 2. |
|
|
| 3. |
- Malm, Gunnar, 1972-, et al.
(författare)
-
Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts
- 2011
-
Ingår i: Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. - : IEEE Computer Society. - 9781457701924 ; , s. 135-138
-
Konferensbidrag (refereegranskat)abstract
- Schottky-barrier source/drain (SB-S/D) is a promising solution for low-resistive contact formation in fully depleted SOI ultra-thin body (UTB) FETs, or FinFETs. In this study the low-frequency noise of FinFETs and UTB-FETs, with platinum-silicide based source/drain contacts with low barrier height was characterized. The barrier height was tuned by means of segregation of implanted As or B. In the linear region of operation the noise power spectral density of devices with different barrier heights was not significantly affected for a given drain current. This suggests that channel noise dominates the behavior and that the low effective Schottky barrier height in dopant segregated devices does not introduce additional noise.
|
|
| 4. |
- Rodilla, H., et al.
(författare)
-
Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
- 2011
-
Ingår i: 21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011. - 9781457701924 ; , s. 184-187
-
Konferensbidrag (refereegranskat)abstract
- In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic T and max have been obtained and compared with experimental data, getting a good agreement for T but some discrepancies for max . Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F min =0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm. © 2011 IEEE.
|
|
