| 1. |
- Larsson, Anders, 1957, et al.
(författare)
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High speed VCSELs for optical interconnects
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 269-272
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Konferensbidrag (refereegranskat)abstract
- This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width we have extended the reach on multimode fiber at 25 Gbps from 100 to 500 m. Improved link capacity was also demonstrated using a more spectrally efficient multi-level modulation format (4-PAM). Finally, a MEMS-technology for wafer scale integration of tunable high speed VCSELs was developed, enabling a tuning range of 24 nm, a 6 GHz modulation bandwidth, and 5 Gbps transmission.
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| 2. |
- Malko, Aleksandra, 1984, et al.
(författare)
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High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band HBV Frequency Tripler
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 92-94
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Konferensbidrag (refereegranskat)abstract
- We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of four HBV diode mesas, with total 12 barriers, and a cross section area of 700μm^2. The presented tripler withstands 800mW input power, while delivering 185mW of output power at 107GHz. The corresponding conversion efficiency was measured to be 23% and the circuit exhibited 15% 3-dB bandwidth.
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| 3. |
- Metaferia, Wondwosen, et al.
(författare)
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Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics
- 2013
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Ingår i: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. - : IEEE. - 9781467317252 ; , s. 81-84
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Konferensbidrag (refereegranskat)abstract
- InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and uniform over the entire patterned area on both substrates. The measured diagonal of the top surface is 30 nm and 90 nm for the nanopyramidal frusta grown from 120 nm and 300 nm diameter openings, respectively. The size and morphology as well as the optical quality of these pyramidal frusta make them suitable templates for quantum dot structures for nano photonics and silicon photonics.
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| 4. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Source-drain scaling of ion-implanted InAs/AlSb HEMTs
- 2012
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Ingår i: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. - : IEEE. - 1092-8669. - 9781467317252 ; , s. 57-60
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Konferensbidrag (refereegranskat)abstract
- We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and T of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.
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| 5. |
- Rodilla, Helena, 1982, et al.
(författare)
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Optimized InP HEMTs for low noise at cryogenic temperatures
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 241-244
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Konferensbidrag (refereegranskat)abstract
- Experimental results and Monte Carlosimulations have been analyzed and compared at 300 K and 77 K for 130 nm gate-length InP HEMTs optimized for cryogenic 4-8 GHz low-noise amplifiers. The good agreement observed between simulations and experimental data for DC and small signal equivalent circuit parameters validates the simulation model. Compared to 300 K, an increase of 17% in the simulated mean electron velocity under the gate was observed at low drain current (100 mA/mm) when operating the device at 77 K. In addition, a better electron confinement in the channel was noted. The observations are consistent with an increase of the slope of the transconductance versus gate bias with reduced temperature. The high transconductance at low drain current is crucial for low noise operation of the InP HEMT at low temperature.
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| 6. |
- Westlund, Andreas, 1985, et al.
(författare)
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Fabrication and DC characterization of InAs/AlSb self-switching diodes
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 65-68
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Konferensbidrag (refereegranskat)abstract
- Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.
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| 7. |
- Zhao Ternehäll, Huan, 1982, et al.
(författare)
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Development of a 557 GHz GaAs monolithic membrane-diode mixer
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 102-105
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Konferensbidrag (refereegranskat)abstract
- We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.
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