| 1. |
- Huang, Tongde, 1985, et al.
(författare)
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Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
- 2015
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Ingår i: 2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3. - 9781479987672 ; 3
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Konferensbidrag (refereegranskat)abstract
- A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (
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| 2. |
- Silva Barrera, Oliver, 1985, et al.
(författare)
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4 W Highly Linear and Reliable GaN Power Amplifier for C-Band Applications
- 2015
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Ingår i: Asia-Pacific Microwave Conference, APMC 2015; Jinling HotelNanjing; China; 6 December 2015 through 9 December 2015. - 9781479987672 ; 3, s. Art. no. 7413430-
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Konferensbidrag (refereegranskat)abstract
- A C-band GaN amplifier is reported. The design method is focused on high linearity load optimization and use of non-linear transistor models to predict harmonic generation and intermodulation products. The amplifier is characterized in terms of S-parameters, single tone and two tone output power. The measured small signal gain is 24.6 dB. The 1 dB compression point is measured at 36 dBm and the output third order intercept point (OIP3) is above 45 dBm. The power consumption is 10.7 W, the channel temperature 205 degrees C at drain bias 15 V avoiding stress on the device for reliable operation.
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