SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "L773:9781509006373 "

Sökning: L773:9781509006373

  • Resultat 1-2 av 2
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Vasen, T., et al. (författare)
  • InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
  • 2016
  • Ingår i: 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. - 9781509006373 ; 2016-September
  • Konferensbidrag (refereegranskat)abstract
    • InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.
  •  
2.
  • Zota, Cezar B., et al. (författare)
  • InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
  • 2016
  • Ingår i: 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. - 9781509006373
  • Konferensbidrag (refereegranskat)abstract
    • We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-2 av 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy