| 1. |
- Buyanova, Irina, et al.
(författare)
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Novel GaNAs and GaNP-based Nanowires - Promising Materials for Optoelectronics and Photonics
- 2016
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Ingår i: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). - : IEEE. - 9781509014934 ; , s. 38-41
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Konferensbidrag (refereegranskat)abstract
- In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zincblende NWs of various diameters. We also demonstrate that, though the GaNxP1-x alloys have rather wide bandgap energies of 1.9 - 2.3 eV, the coaxial GaNP NWs absorb infrared light via two-step two-photon absorption.
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| 2. |
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| 3. |
- Hansson, Josef, 1991, et al.
(författare)
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Review of Current Progress of Thermal Interface Materials for Electronics Thermal Management Applications
- 2016
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Ingår i: 2016 Ieee 16th International Conference on Nanotechnology (Ieee-Nano). - 9781509014934 ; , s. 371-374
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Konferensbidrag (refereegranskat)abstract
- Increasing power densities within microelectronic systems place an ever increasing demand on the thermal management. Thermal interface materials (TIMs) are used to fill air gaps at the interface between two materials, greatly increasing the thermal conductance when solid surface are attached together. The last decade has provided significant development on high-performing TIMs, and this paper makes a summarized review on recent progress on the topic. Current state of the art commercial TIM types are presented, and discussed in regards to their advantages and disadvantages. Two main categories of TIMs with high interest are then reviewed: continuous metal phase TIMs and carbon nanotube array TIMs.
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| 4. |
- Huang, Yuqing, et al.
(författare)
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Spin injection loss in self-assembled InAs/GaAs quantum dot structures from disordered barrier layers
- 2016
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Ingår i: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). - : IEEE. - 9781509014934 ; , s. 627-629
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Konferensbidrag (refereegranskat)abstract
- Semiconductor quantum dot (QD) structures are considered as promising building block for spintronic applications with the advantage of prolonged spin relaxation time owing to 0D character of confined carriers or excitons. However, feasible application is haunted by severe spin injection loss from its adjacent barrier layers and its mechanism is still not fully understood. Here, we show that exciton spin injection in self-assembled InAs/GaAs QD molecular structures (QMSs) is dominated by localized excitons confined within the QD-like regions of the wetting layer (WL) and GaAs barrier layer surrounding QD structures. The origin of spin injection loss is attribute to finite anisotropic exchange interaction (AEI) of the localized excitons subjected to asymmetric confinement potential in the injection layers. As a result, the AEI of the injected excitons and, thus, the spin injection efficiency is determined to be correlated with the overall geometric symmetry of QMSs, which hold strong influence on the confinement potential of the localized excitons in the surrounding barrier layers. Our results shed light on the microscopic origin of the spin injection loss in QD structures. More importantly, they offer a useful guideline to significantly improve spin injection efficiency by optimizing the lateral arrangement of QMSs and overcome a major challenge in the QD based spintronic device applications.
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| 5. |
- Jansson, Mattias, et al.
(författare)
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Characterization of Quantum Dot-like Emission from GaAs/GaNAs Core/Shell Nanowires
- 2016
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Ingår i: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). - : IEEE. - 9781509014934 ; , s. 42-44
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Konferensbidrag (refereegranskat)abstract
- this work we investigate properties of ultra-narrow photoluminescence lines originating from recombination of excitons trapped by short-range potential fluctuations, caused by alloy disorder in GaAs/GaNAs core/shell nanowires. From power-dependent photoluminescence measurements we show that the emission behavior is consistent with biexciton-exciton cascade recombination in quantum dots. We also show that the thermal activation energy from the related localized states is of the order of 9-30 meV, suggesting a rather shallow confinement potential.
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| 6. |
- Ji, Yu-Xia, et al.
(författare)
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Direct Formation of Thermochromic Composite Films of VO2 Nanoparticles in SiO2 Hosts
- 2016
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Ingår i: 2016 Ieee 16th International Conference On Nanotechnology (IEEE-NANO). - 9781509014934 ; , s. 823-825
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Konferensbidrag (refereegranskat)abstract
- Vanadium dioxide (VO2) is a key material for modern thermochromic energy-efficient window coatings. Nanocomposite VO2-SiO2 films were fabricated by reactive magnetron sputtering. VO2 nanoparticles with grain sizes of about 100 nm were distributed uniformly in the SiO2 host, and the composite film showed excellent thermochromic properties with plasmonic effect.
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