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Sökning: L773:9781538644829

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1.
  • Sultan, M. T., et al. (författare)
  • Enhanced Photoconductivity of SIGE-Trilayer Stack by Retrenching Annealing Conditions
  • 2018
  • Ingår i: 2018 International Semiconductor Conference (CAS). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538644829 ; , s. 61-64
  • Konferensbidrag (refereegranskat)abstract
    • We studied the effect of short term furnace annealing over the photoconductive properties of tristacked layer i.e. TiO2/(SiGe/TiO2)3. The structure was prepared by depositing alternate layers of TiO2 and SiGe films, using direct-current magnetron sputtering technique. A transmission electron microscopy and grazing incidence spectroscopy was used to analyze the morphology of the structure. Photoconductive properties were studied by measuring photocurrent spectra at different applied voltages and temperatures. Tristack layers were obtained with 5-10 nm SiGe nanocrystals (NCs) by annealing at 600 °C for 5 min. No sign of SiO2 formation was found inside stacked layers. A maximum in the photocurrent spectra was observed at 994 nm at 300 K but it red-shifted gradually to 1045 nm with decrease in temperature to 100 K. This transition in peak maxima is attributed to SiGe NCs, due to lattice vibration and to contribution of non-radiative recombination at low temperatures.
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2.
  • Sultan, M. T., et al. (författare)
  • The Effect of H2/Ar Plasma Treatment over Photoconductivity of Sige Nanoparticles Sandwiched between Silicon Oxide Matrix
  • 2018
  • Ingår i: Proceedings of the International Semiconductor Conference, CAS. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781538644829 ; , s. 257-260
  • Konferensbidrag (refereegranskat)abstract
    • The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.
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  • Resultat 1-2 av 2
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Gudmundsson, Jon Tom ... (2)
Manolescu, A. (2)
Svavarsson, H G (2)
Sultan, M. T. (2)
Palade, C. (1)
Ciurea, M. L. (1)
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Maraloiu, A. V. (1)
Ciureai, M. L. (1)
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2018 (2)

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