| 1. |
- Bengtsson, Olof, et al.
(författare)
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A Computational Load-Pull Method for TCAD Optimization of RF-Power Transistors in Bias-Modulation Applications
- 2008
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Ingår i: Proceedings of the 3rd European Microwave Integrated Circuits Conference. - 9782874870071
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Konferensbidrag (refereegranskat)abstract
- In this paper a method for TCAD evaluation of RF-Power transistors for high-efficiency operation using drain bias-modulation is presented. The method is based on large signal time-domain transient computational load-pull. With the method, intrinsic device parasitics and mechanisms affecting device efficiency under drain bias modulation can be investigated and optimized for the application making it very useful for RFIC design. A case study has been done on a CMOS compatible LDMOS. For verification under dynamic operation two-tone signals with varying envelope has been simulated. The results show a possible 15% increase in the efficiency of a modulated signal for the studied device at the expense of increased phase distortion observable also in the time-domain waveforms generated. Since the method is based on TCAD it is also useful in the investigation of e.g. dynamic breakdown during high envelope under bias-modulation operation.
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| 2. |
- Ferndahl, Mattias, 1973, et al.
(författare)
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20 GHz Power Amplifier Design in 130 nm CMOS
- 2008
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Ingår i: 2008 European Microwave Integrated Circuit Conference, EuMIC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008. - 9782874870071 ; , s. 254-257
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Konferensbidrag (refereegranskat)abstract
- Five different 20 GHz power amplifiers in 130 nm CMOS technology have been designed and characterized. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, as well as the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor level characterization using load pull measurements on 1 mm gate width transistors yielded 148 mW output power. These numbers are, to the authors? knowledge, the highest reported for CMOS above 10 GHz. Transistor modeling and layout for power amplifiers are also discussed.
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| 3. |
- Medina, M. A.Yarleque, et al.
(författare)
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Doherty amplifier design for 3.5 GHz WiMAX considering load line and loop stability
- 2008
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Ingår i: 2008 European Microwave Integrated Circuit Conference, EuMIC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008. - 9782874870071 ; , s. 1549-1552
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Konferensbidrag (refereegranskat)abstract
- Legacy Doherty amplifier is characterized by using a larger transistor for the peak amplifier such that this reaches saturation with a smaller excitation signal. However due to device availability and modelling considerations, this is not often feasible. In this paper, the design and measurement of a Doherty amplifier utilizing only single sized device is realized. Unlike previous research works, intrinsic load line is utilized to tune the offset lines, as well as to verify the actual dynamic load principle. Stability aspects are covered for this type of amplifier, which are not normally included in earlier works. Finally an assessment of its applicability and benefits for WiMAX at 3.5 GHz is realized using a class AB amplifier as a comparison basis.
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| 4. |
- Stake, Jan, 1971, et al.
(författare)
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Heterostructure Barrier Varactor Quintuplers for Terahertz Applications
- 2008
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Ingår i: Proceedings of the 3rd European Microwave Integrated Circuit Conference. - 9782874870071 ; , s. 206-209
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Konferensbidrag (refereegranskat)abstract
- We present progress and status of Heterostructure Barrier Varactor quintupler sources for 170 GHz and 210 GHz (G-band). The source modules feature an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present progress on design and fabrication of integrated HBV circuits for terahertz applications.
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