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- Hassona, Ahmed Adel, 1988, et al.
(författare)
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F-band Low-loss Tapered Slot Transition for Millimeter-wave System Packaging
- 2019
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Ingår i: 2019 49th European Microwave Conference, EuMC 2019. - 9782874870552 ; , s. 432-435
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Konferensbidrag (refereegranskat)abstract
- This work presents a packaging solution at F-band (90 - 140 GHz) using on-chip waveguide transition. The transition is realized using a Linearly Tapered Slot (LTS) implemented in a commercial Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology. The LTS is mounted in the E-plane of a split-block waveguide module and fed through a microstrip line. The transition is experimentally verified using a back-to-back test structure and it exhibits an average insertion loss of 1.7 dB over the frequency range extending from 100 to 135 GHz. This work presents an on-chip packaging technique to realize the interface between MMICs and standard waveguides at millimeter-wave (mmW) frequencies and hence addressing one of the main integration challenging facing systems operating at that range.
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- Tong, Renbin, et al.
(författare)
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A Planar Single-ended Kilowatt-level VHF Class E Power Amplifier
- 2019
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Ingår i: 2019 49th European Microwave Conference (EUMC). - : IEEE. - 9782874870552 ; , s. 892-895, s. 338-341
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Konferensbidrag (refereegranskat)abstract
- This paper demonstrates a high-efficiency kilowatt-level Class E RF power amplifier which is designed as RF source for particle accelerator energy systems. Class E method of switch mode feathers is employed here to improve efficiency for such high power kilowatts PA in a single chip. It uses a powerful LDMOS-transistor in a single-ended design and provides 1200 W peak power with 83% drain efficiency and 19.9 dB gain at 100 MHz operation. In addition it provides 1010 W peak power with 87% drain efficiency and 20.4 dB gain at 102 MHz operation. All measurements were performed in pulsed operation with a 5% duty cycle, 3.5 ms pulse at 14 Hz repetition. According to the authors' knowledge, this kilowatts power amplifier adopted Class E method is reported at first time in this field.
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