| 1. |
- Callaghan, Terry, et al.
(författare)
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Multi-Decadal Changes in Tundra Environments and Ecosystems : Synthesis of the International Polar Year-Back to the Future Project (IPY-BTF)
- 2011
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Ingår i: Ambio. - : Springer Science and Business Media LLC. - 0044-7447 .- 1654-7209. ; 40:6, s. 705-716
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Tidskriftsartikel (refereegranskat)abstract
- Understanding the responses of tundra systemsto global change has global implications. Most tundraregions lack sustained environmental monitoring and oneof the only ways to document multi-decadal change is toresample historic research sites. The International PolarYear (IPY) provided a unique opportunity for such researchthrough the Back to the Future (BTF) project (IPY project#512). This article synthesizes the results from 13 paperswithin this Ambio Special Issue. Abiotic changes includeglacial recession in the Altai Mountains, Russia; increasedsnow depth and hardness, permafrost warming, andincreased growing season length in sub-arctic Sweden;drying of ponds in Greenland; increased nutrient availabilityin Alaskan tundra ponds, and warming at mostlocations studied. Biotic changes ranged from relativelyminor plant community change at two sites in Greenland tomoderate change in the Yukon, and to dramatic increasesin shrub and tree density on Herschel Island, and in subarcticSweden. The population of geese tripled at one sitein northeast Greenland where biomass in non-grazed plotsdoubled. A model parameterized using results from a BTFstudy forecasts substantial declines in all snowbeds andincreases in shrub tundra on Niwot Ridge, Colorado overthe next century. In general, results support and provideimproved capacities for validating experimental manipulation,remote sensing, and modeling studies.
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| 2. |
- Chumak, A. V., et al.
(författare)
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Advances in Magnetics Roadmap on Spin-Wave Computing
- 2022
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Ingår i: IEEE Transactions on Magnetics. - 0018-9464. ; 58:6
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Tidskriftsartikel (refereegranskat)abstract
- Magnonics addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operation in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors that covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with Boolean digital data, unconventional approaches like neuromorphic computing, and the progress towards magnon-based quantum computing. The article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of current challenges and the outlook of further development for each research direction. Author
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| 3. |
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| 4. |
- Engel, B. N., et al.
(författare)
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A 4-mb toggle MRAM based on a novel bit and switching method
- 2005
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Ingår i: IEEE transactions on magnetics. - 0018-9464 .- 1941-0069. ; 41:1, s. 132-136
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Tidskriftsartikel (refereegranskat)abstract
- 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum(2). The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.
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| 5. |
- Åkerman, Johan, et al.
(författare)
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Intrinsic reliability of AlOx-based magnetic tunnel junctions
- 2006
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Ingår i: IEEE transactions on magnetics. - 0018-9464 .- 1941-0069. ; 42:10, s. 2661-2663
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Tidskriftsartikel (refereegranskat)abstract
- We present a detailed investigation into the intrinsic tunnel barrier reliability in AlOx-based magnetic tunnel junctions (MTJs) as a function of aluminum thickness and oxidation time. The intrinsic reliability is measured as the ramped breakdown voltage (V-bd) at room temperature for both positive and negative polarity. We find that Vbd generally increases with the resistance-area (RA) product of the MTJ. While this dependence is quite strong at low RA, it gradually weakens for higher RA. At fixed RA, Vbd also depends on the original Al film thickness with better properties for thicker Al. Finally, we observe a polarity dependence of V-bd which changes sign as the MTJ goes from thin Al to thick Al. We attribute the polarity dependence to the different quality of the top and bottom interfaces and conclude that the interface emitting the tunneling electrons primarily governs the barrier reliability.
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| 6. |
- Dave, Renu W., et al.
(författare)
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MgO-based tunnel junction material for high-speed toggle magnetic random access memory
- 2006
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Ingår i: IEEE transactions on magnetics. - 0018-9464 .- 1941-0069. ; 42:8, s. 1935-1939
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Tidskriftsartikel (refereegranskat)abstract
- We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss the MTJ process optimization and material changes that made the demonstration possible. We present data on key MTJ material attributes for different oxidation processes and free-layer alloys, including resistance distributions, bias dependence, free-layer magnetic properties, interlayer coupling, breakdown voltage, and thermal endurance. A tunneling magnetoresistance (TMR) greater than 230% was achieved with CoFeB free layers and greater than 85% with NiFe free layers. Although the TMR with NiFe is at the low end of our MgO comparison, even this MTJ material enables faster access times, since its TMR is almost double that of a similar structure with an AlOx barrier. Bit-to-bit resistance distributions are somewhat wider for MgO barriers, with sigma about 1.5% compared to about 0.9% for AlOx. The read access time of our 4 Mb toggle MRAM circuit was reduced from 21 ns with AlOx to a circuit-limited 17 ns with MgO.
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| 7. |
- Nguyen, T. N. A., et al.
(författare)
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Correlation of magnetic and magnetoresistive properties of nanoporous Co/Pd thin multilayers fabricated on anodized TiO2 templates
- 2020
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 10:1
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Tidskriftsartikel (refereegranskat)abstract
- In this study, we consider a technological approach to obtain a high perpendicular magnetic anisotropy of the Co/Pd multilayers deposited on nanoporous TiO2 templates of different types of surface morphology. It is found that the use of templates with homogeneous and smoothed surface relief, formed on silicon wafers, ensures conservation of perpendicular anisotropy of the deposited films inherent in the continuous multilayers. Also, their magnetic hardening with doubling of the coercive field is observed. However, inhomogeneous magnetic ordering is revealed in the porous films due to the occurrence of magnetically soft regions near the pore edges and/or inside the pores. Modeling of the field dependences of magnetization and electrical resistance indicates that coherent rotation is the dominant mechanism of magnetization reversal in the porous system instead of the domain-wall motion typical of the continuous multilayers, while their magnetoresistance is determined by electron-magnon scattering, similarly to the continuous counterpart. The preservation of spin waves in the porous films indicates a high uniformity of the magnetic ordering in the fabricated porous systems due to a sufficiently regular pores array introduced into the films, despite the existence of soft-magnetic regions. The results are promising for the design and fabrication of future spintronic devices.
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| 8. |
- Nguyen, T. N. Anh, et al.
(författare)
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Enhanced Perpendicular Exchange Bias in Co/Pd Antidot Arrays
- 2019
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 48:3, s. 1492-1497
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Tidskriftsartikel (refereegranskat)abstract
- Magnetic nanostructures revealing the exchange bias (EB) effect have attracted much interest in recent years due to their promising applications in spintronics, magneticsensing and recording devices with various functionalities. In this paper, we report on the perpendicular exchange bias effect in a multilayered thin film composed of [Co/Pd] ferromagnetic multilayers exchange-coupled to an antiferromagnetic IrMn. The film was deposited on a porous anodized titania template. Influences of the films' surface morphology as well as the order of layers deposited on the EB effect were studied. The enhancements of the EB field H-EB (up to 30%) and the coercive field H-C (two times) were achieved in the nanoporous films relative to their continuous film counterparts, which could be attributed to the specific morphology of the porous surfaces.
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| 9. |
- Wu, W. B., et al.
(författare)
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Complex magnetic ordering in nanoporous Co/Pd (5)-IrMn multilayers with perpendicular magnetic anisotropy and its impact on magnetization reversal and magnetoresistance
- 2020
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Ingår i: Physical Chemistry Chemical Physics. - : Royal Society of Chemistry (RSC). - 1463-9076 .- 1463-9084. ; 22:6, s. 3661-3674
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Tidskriftsartikel (refereegranskat)abstract
- We have systematically investigated the magnetization reversal characteristics and magnetoresistance of continuous and nanoporous [Co/Pd](5)-IrMn multilayered thin films with perpendicular magnetic anisotropy at different temperatures (4-300 K). For their nanostructuring, porosity was induced by means of deposition onto templates of anodized titania with small (similar to 30 nm in diameter) homogeneously distributed pores. The magnetization reversal and magnetoresistance of the porous films were found to be closely related to the splitting of the ferromagnetic material into regions with different magnetic properties, in correlation with the complex morphology of the porous system. Independent magnetization reversal is detected for these regions, and is accompanied by its strong impact on the magnetic order in the capping IrMn layer. Electron-magnon scattering is found to be a dominant mechanism of magnetoresistance, determining its almost linear field dependence in a high magnetic field and contributing to its magnetoresistance behavior, similar to magnetization reversal, in a low magnetic field. Partial rotation of IrMn magnetic moments, consistent with the magnetization reversal of the ferromagnet, is proposed as an explanation for the two-state resistance behavior observed in switching between high-resistive and low-resistive values at the magnetization reversal of the porous system studied.
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| 10. |
- Wu, W. B., et al.
(författare)
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Influence of interfacial magnetic ordering and field-cooling effect on perpendicular exchange bias and magnetoresistance in nanoporous IrMn/ Co/Pd films
- 2020
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 127:22
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Tidskriftsartikel (refereegranskat)abstract
- We have studied systematically the effect of field cooling on the magnetic properties of continuous and porous IrMn/[Co/Pd] films. It is found that the coexistence of two ferromagnetic (FM) phases in the porous film, namely, hard-magnetic and soft-magnetic ones, with significantly different magnetic properties relates to the role of pore edges and modifies its magnetic and magnetoresistive properties. It is shown that annealing of the films with their subsequent cooling in an external magnetic field applied for aligning the magnetic moments in the antiferromagnetic (AFM) IrMn layer improves effectively the uniaxial perpendicular anisotropy of the [Co/Pd] layer and induces unidirectional anisotropy in its hard-magnetic regions, blocking simultaneously the soft-magnetic parts by pinning their magnetic moments along the film plane. Magnetoresistance of both continuous and porous films is found to be determined mainly by electron-magnon scattering, whereas the complex morphology of the porous film providing different orientations of exchange coupling at the AFM/FM interface in different film regions modifies significantly the spin-dependent electron transport. The revealed asymmetry of the field dependences of magnetoresistance is attributed both to unidirectional magnetic anisotropy of the FM layer and its splitting into magnetically nonequivalent regions in the porous films. The origin of the observed phenomenon is associated with a local influence on the orientation of AFM magnetic moments by an adjacent ferromagnet.
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