| 1. |
- Kuroki, S. -I, et al.
(författare)
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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
- 2017
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Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications. - 9783035710434 ; , s. 669-672
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Konferensbidrag (refereegranskat)abstract
- For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200ºC. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.
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| 2. |
- Ishii, T., et al.
(författare)
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Suppression of short-channel effects in 4H-SIC trench MOSFETS
- 2019
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Ingår i: Silicon Carbide and Related Materials 2018. - : Trans Tech Publications Ltd. - 9783035713329 ; , s. 613-616
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Konferensbidrag (refereegranskat)abstract
- Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.
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| 3. |
- Kuroki, S. I., et al.
(författare)
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Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation
- 2016
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Ingår i: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 864-867
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Konferensbidrag (refereegranskat)abstract
- Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.
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| 4. |
- Kurose, T., et al.
(författare)
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Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics
- 2018
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Ingår i: Materials Science Forum. - : Trans Tech Publications. - 0255-5476 .- 1662-9752. - 9783035711455 ; 924, s. 971-974
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Tidskriftsartikel (refereegranskat)abstract
- Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were suggested and demonstrated. In these nMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain, drain-source capacitance) were investigated and low parasitic capacitance was achieved by the self-aligned structure
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| 5. |
- Östling, Jörgen, et al.
(författare)
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IL-17-high asthma with features of a psoriasis immunophenotype
- 2019
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Ingår i: Journal of Allergy and Clinical Immunology. - : Elsevier. - 0091-6749 .- 1097-6825. ; 144:5, s. 1198-1213
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Tidskriftsartikel (refereegranskat)abstract
- Background: The role of IL-17 immunity is well established in patients with inflammatory diseases, such as psoriasis and inflammatory bowel disease, but not in asthmatic patients, in whom further study is required.Objective: We sought to undertake a deep phenotyping study of asthmatic patients with upregulated IL-17 immunity.Methods: Whole-genome transcriptomic analysis was performed by using epithelial brushings, bronchial biopsy specimens (91 asthmatic patients and 46 healthy control subjects), and whole blood samples (n = 498) from the Unbiased Biomarkers for the Prediction of Respiratory Disease Outcomes (U-BIOPRED) cohort. Gene signatures induced in vitro by IL-17 and IL-13 in bronchial epithelial cells were used to identify patients with IL-17–high and IL-13–high asthma phenotypes.Results: Twenty-two of 91 patients were identified with IL-17, and 9 patients were identified with IL-13 gene signatures. The patients with IL-17–high asthma were characterized by risk of frequent exacerbations, airway (sputum and mucosal) neutrophilia, decreased lung microbiota diversity, and urinary biomarker evidence of activation of the thromboxane B2 pathway. In pathway analysis the differentially expressed genes in patients with IL-17-high asthma were shared with those reported as altered in psoriasis lesions and included genes regulating epithelial barrier function and defense mechanisms, such as IL1B, IL6, IL8, and β-defensin.Conclusion: The IL-17–high asthma phenotype, characterized by bronchial epithelial dysfunction and upregulated antimicrobial and inflammatory response, resembles the immunophenotype of psoriasis, including activation of the thromboxane B2 pathway, which should be considered a biomarker for this phenotype in further studies, including clinical trials targeting IL-17.
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| 6. |
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| 7. |
- Inoue, J., et al.
(författare)
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4H-SIC trench pMOSFETs for high-frequency CMOS inverters
- 2019
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Ingår i: Silicon Carbide and Related Materials 2018. - : Trans Tech Publications Ltd. - 9783035713329 ; , s. 837-840
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Konferensbidrag (refereegranskat)abstract
- Low-parasitic-capacitance 4H-SiC pMOSFETs were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain capacitance) were investigated and low parasitic capacitance was achieved by the trench gate structure.
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| 8. |
- Kajihara, J., et al.
(författare)
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4H-SiC pMOSFETs with al-doped S/D and NbNi silicide ohmic contacts
- 2018
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Ingår i: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017. - : Trans Tech Publications. - 9783035711455 ; , s. 423-427
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Konferensbidrag (refereegranskat)abstract
- 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200°C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni stack, Nb-Ni Alloy, Ni and Nb/Ti were investigated, and the Nb/Ni stack silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs.
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| 9. |
- Illarionov, Yu Yu, et al.
(författare)
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Bias-temperature instability in single-layer graphene field-effect transistors
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:14, s. 143507-
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Tidskriftsartikel (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.
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| 10. |
- Illarionov, Yu.Yu., et al.
(författare)
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Bias-temperature instability in single-layer graphene field-effect transistors : A reliability challenge
- 2014
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Ingår i: 2014 Silicon Nanoelectronics Workshop, SNW 2014. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479956777
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Konferensbidrag (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors (GFETs). We demonstrate that the dynamics can be systematically studied when the degradation is expressed in terms of a Dirac point voltage shift. Under these prerequisites it is possible to understand and benchmark both NBTI and PBTI using models previously developed for Si technologies. In particular, we show that the capture/emission time (CET) map approach can be also applied to GFETs and that recovery in GFETs follows the same universal relaxation trend as their Si counterparts. While the measured defect densities can still be considerably larger than those known from Si technology, the dynamics of BTI are in general comparable, allowing for quantitative benchmarking of the graphene/dielectric interface quality.
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