| 1. |
- Carpenter, Sona, 1983, et al.
(författare)
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A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology
- 2013
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Ingår i: 2013 3rd Asia-Pacific Microwave Conference, APMC 2013, Seoul, South Korea, 5-8 November 2013. - 9781479914746 ; , s. 273-275
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Konferensbidrag (refereegranskat)abstract
- A G-Band planar stubbed branch-line balun isdesigned and fabricated in 3μm thick BCB technology. Thistopology of the balun does not need thru-substrate via hole orthin-film resistor which makes it extremely suitable for realizationon single-layer high-resistivity substrates commonly used atmillimeter-wave or post-processed BCB layers on top of standardsemi-insulating wafers. The design is simulated and validated bymeasurements. Measurement results on two fabricated back-tobackbaluns show better than 10 dB input and output return lossand 3.2 dB insertion loss from 140 to 220 GHz.
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| 2. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
- 2012
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 22:3, s. 144-146
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Tidskriftsartikel (refereegranskat)abstract
- A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
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| 3. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
- 2012
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Ingår i: 15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012. - 9782874870286 ; , s. 373-376
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Konferensbidrag (refereegranskat)abstract
- The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
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| 4. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
- 2013
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 79, s. 268-273
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher f(T) (162 GHz) and 72% higher f(max) (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.
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| 5. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A 80-95 GHz direct quadrature modulator in SiGe technology
- 2014
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Ingår i: SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. - 9781479915231 ; , s. 56-58
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Konferensbidrag (refereegranskat)abstract
- A direct carrier IQ modulator operating in the 80-95 GHz frequency range is presented. The circuit is designed and fabricated in 0.18μm SiGe technology with 170/250 GHz fT/fmax. The modulator is based on double-balanced gilbert mixer cells with on-chip quadrature LO phase shifter and consumes 23mW DC power. In single-sideband operation, the chip exhibits up to 3 dB conversion gain below 85 GHz and -1± 0.5 dB up to 95 GHz. The image rejection ratio and LO-RF isolation are as high as 25 dB and 43 dB respectively. The modulator can operate with 10 GHz of modulation bandwidth and delivers -7 dBm power in saturation. For demonstration, the circuit is tested and shown to be capable of transmitting 4Gbps BPSK signal with NRZ rectangular pulses. The active chip area is 480μm× 260μm. © 2014 IEEE.
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| 6. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A Broadband 60-to-120 GHz single-chip MMIC multiplier chain
- 2009
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 441-444
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Konferensbidrag (refereegranskat)abstract
- This paper presents a single-chip 60 GHz to 120 GHz frequency multiplier chain based on 0.1 ?m GaAs mHEMT. The MMIC can deliver 3 to 5 dBm of output power from 110 GHz to 130 GHz with 2 dBm input power and consumes only 65 mW of DC power. The signal at the fundamental frequency is suppressed more than 20 dB over the band of interest. The impedance matching networks are realized using coupled transmission lines.
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| 7. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A broadband differential cascode power amplifier in 45 nm CMOS for high-speed 60 GHz system-on-chip
- 2010
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Ingår i: 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010; Anaheim, CA; 23 May 2010 through 25 May 2010. - 1529-2517. ; , s. 978-142446242-1-
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Konferensbidrag (refereegranskat)abstract
- A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standard LP CMOS. The cascode configuration, with the common gate device placed in a separate P-well, provides reliable operating condition for the devices. The amplifier shows 20 dB small-signal gain centered at 60 GHz with a flat frequency response and 1-dB bandwidth of 10 GHz. The broadband large-signal operation is also ensured by providing constant load resistance to both stages over the entire band and coupling them with a dual resonance matching network. The chip delivers 11.2 dBm output power at 1-dB compression and up to 14.5 dBm power in saturation. The power amplifier operates with 2 V supply and draws 90 mA total current which results in 14.4% maximum PAE. The output third order intercept point is measured to be 18 dBm for two-tone measurement at 60 GHz with 0.5 GHz, 1 GHz and 2 GHz frequency separations. © 2010 IEEE.
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| 8. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A direct conversion quadrature transmitter with digital interface in 45 nm CMOS for high-speed 60 GHz communications
- 2011
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Ingår i: Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. Baltimore, 5-7 June 2011. - 1529-2517. - 9781424482931
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Konferensbidrag (refereegranskat)abstract
- A compact 60 GHz direct conversion quadrature transmitter is designed and fabricated in 45 nm standard LP CMOS. The transmitter features an integrated power amplifier with continuous output level control and interfaces binary data signals with nominal peak-to-peak voltage swing of 300 mV. The highest measured modulation bandwidth is limited by the measurement setup to 4 GHz but is simulated to be as high as 10 GHz. In single sideband up-converting operation mode, the measured image suppression ratio is 22 dB with 36 dB of carrier suppression corresponding to approximately 8% EVM in the output signal constellation. The output RF frequency can be from 54 GHz to 66 GHz to accommodate several channels and the output power can be adjusted from -3 dBm to 10 dBm. The chip is operated from a 2 V supply and draws 180 mA current.
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| 9. |
- Abbasi, Morteza, 1982, et al.
(författare)
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An E-Band(71-76, 81-86 GHz) Balanced Frequency Tripler for High-Speed Communications
- 2009
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Ingår i: APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE. - 9781424428014 ; 1-5, s. 1184-1187
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- An E-Band transistor-based balanced frequency tripler is implemented using a 0.15 mu m GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90 degrees hybrids at the input and output improves the port impedance matching which is measured to be better than 15 dB at the input and 10 dB at the output over the frequencies of interest. The tripler has a conversion loss of 11.5 dB from 71 GHz to 76 GHz and 14 dB from 81 GHz to 86 GHz. The second and forth harmonics are suppressed by more than 30 dB and the fundamental frequency by 20 dB. The tripler can deliver -2 dBm output power.
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| 10. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Direct carrier quadrature modulator and Demodulator MMICs for 60 GHz gigabit wireless communications
- 2011
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Ingår i: Asia-Pacific Microwave Conference Proceedings (APMC 2011; Melbourne, VIC; 5 - 8 December 2011). - 9780858259744 ; , s. 1134-1137
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 μm mHEMT technology. The design is based on passive mixers and therefore reciprocal which makes it possible to be used both as modulator and demodulator. The modulator has an input bandwidth of 0-5 GHz on each of the I and Q ports and an RF bandwidth of 53-68 GHz. Carrier leakage to the output port is eliminated by addition of an inductive path from the LO port to the RF port. The modulator requires 5 dBm LO power and can output up to -6 dBm RF power in linear region and up to -4 dBm when driven into saturation. When operated as an SSB mixer, the conversion loss is measured to be 11 dB and image and LO signals are suppressed by as much as 30 dB compared to the desired signal. For demonstration, a pair of the presented modulator/demodulator is used to transmit 7Gbps BPSK signal over 1m and 10Gbps QPSK signal over 0.5m wireless link.
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