| 1. |
- Abdi-Jalebi, Mojtaba, et al.
(författare)
-
Dedoping of Lead Halide Perovskites Incorporating Monovalent Cations
- 2018
-
Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 12:7, s. 7301-7311
-
Tidskriftsartikel (refereegranskat)abstract
- We report significant improvements in the optoelectronic properties of lead halide perovskites with the addition of monovalent ions with ionic radii close to Pb2+. We investigate the chemical distribution and electronic structure of solution processed CH3NH3PbI3 perovskite structures containing Na+, Cu+, and Ag+, which are lower valence metal ions than Pb2+ but have similar ionic radii. Synchrotron X-ray diffraction reveals a pronounced shift in the main perovskite peaks for the monovalent cation-based films, suggesting incorporation of these cations into the perovskite lattice as well as a preferential crystal growth in Ag+ containing perovskite structures. Furthermore, the synchrotron X-ray photoelectron measurements show a significant change in the valence band position for Cu- and Ag-doped films, although the perovskite bandgap remains the same, indicating a shift in the Fermi level position toward the middle of the bandgap. Such a shift infers that incorporation of these monovalent cations dedope the n-type perovskite films when formed without added cations. This dedoping effect leads to cleaner bandgaps as reflected by the lower energetic disorder in the monovalent cation-doped perovskite thin films as compared to pristine films. We also find that in contrast to Ag+ and Cu+, Na+ locates mainly at the grain boundaries and surfaces. Our theoretical calculations confirm the observed shifts in X-ray diffraction peaks and Fermi level as well as absence of intrabandgap states upon energetically favorable doping of perovskite lattice by the monovalent cations. We also model a significant change in the local structure, chemical bonding of metal-halide, and the electronic structure in the doped perovskites. In summary, our work highlights the local chemistry and influence of monovalent cation dopants on crystallization and the electronic structure in the doped perovskite thin films.
|
|
| 2. |
- Abdi-Jalebi, Mojtaba, et al.
(författare)
-
Maximizing and stabilizing luminescence from halide perovskites with potassium passivation
- 2018
-
Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 555, s. 497-501
-
Tidskriftsartikel (refereegranskat)abstract
- Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability2 (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield—a quantity that must be maximized to obtain high efficiency—remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.
|
|
| 3. |
- Jalebi, Mojtaba Abdi, et al.
(författare)
-
Potassium- and Rubidium-Passivated Alloyed Perovskite Films : Optoelectronic Properties and Moisture Stability
- 2018
-
Ingår i: ACS Energy Letters. - : American Chemical Society (ACS). - 2380-8195. ; 3:11, s. 2671-2678
-
Tidskriftsartikel (refereegranskat)abstract
- Halide perovskites passivated with potassium or rubidium show superior photovoltaic device performance compared to unpassivated samples. However, it is unclear which passivation route is more effective for film stability. Here, we directly compare the optoelectronic properties and stability of thin films when passivating triple-cation perovskite films with potassium or rubidium species. The optoelectronic and chemical studies reveal that the alloyed perovskites are tolerant toward higher loadings of potassium than rubidium. Whereas potassium complexes with bromide from the perovskite precursor solution to form thin surface passivation layers, rubidium additives favor the formation of phase-segregated micron-sized rubidium halide crystals. This tolerance to higher loadings of potassium allows us to achieve superior passivation. We also find that exposure to a humid atmosphere drives phase luminescent properties with potassium segregation and grain coalescence for all compositions, with the rubidium-passivated sample showing the highest sensitivity to nonperovskite phase formation. Our work highlights the benefits but also the limitations of these passivation approaches in maximizing both optoelectronic properties and the stability of perovskite films.
|
|
| 4. |
- Merdasa, Aboma, et al.
(författare)
-
Impact of Excess Lead Iodide on the Recombination Kinetics in Metal Halide Perovskites
- 2019
-
Ingår i: ACS Energy Letters. - : American Chemical Society (ACS). - 2380-8195. ; , s. 1370-1378
-
Tidskriftsartikel (refereegranskat)abstract
- Fundmental comprehension of light-induced processes in perovskites are still scarce. One active debate surrounds the influence of excess lead iodide (PbI2) on device performance, as well as optoelectronic properties, where both beneficial and detrimental traits have been reported. Here, we study its impact on charge carrier recombination kinetics by simultaneously acquiring the photoluminescence quantum yield and time-resolved photoluminescence as a function of excitation wavelength (450-780 nm). The presence of PbI2 in the perovskite film is identified via a unique spectroscopic signature in the PLQY spectrum. Probing the recombination in the presence and absence of this signature, we detect a radiative bimolecular recombination mechanism induced by PbI2. Spatially resolving the photoluminescence, we determine that this radiative process occurs in a small volume at the PbI2/perovskite interface, which is only active when charge carriers are generated in PbI2, and therefore provide deeper insight into how excess PbI2 may improve the properties of perovskite-based devices.
|
|
| 5. |
- Zhao, Baodan, et al.
(författare)
-
High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics
- 2017
-
Ingår i: Advanced Materials. - : Wiley-VCH Verlagsgesellschaft. - 0935-9648 .- 1521-4095. ; 29
-
Tidskriftsartikel (refereegranskat)abstract
- Low-bandgap CH3NH3(PbxSn1–x)I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V−1s−1) intrinsic carrier mobilities.
|
|
