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- Usachov, D., et al.
(författare)
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Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
- 2011
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:12, s. 5401-5407
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Tidskriftsartikel (refereegranskat)abstract
- A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.
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| 2. |
- Usachov, D., et al.
(författare)
-
Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
- 2010
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 82:7
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
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