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- O'Neill, A., et al.
(författare)
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Reduced self-heating by strained silicon substrate engineering
- 2008
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:19, s. 6182-6185
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Tidskriftsartikel (refereegranskat)abstract
- Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become necessary in order to maintain performance leverage of integrated circuits with continued scaling. The relevance of thermal effects in device design increases since the thermal conductivity of these new materials is poor. The electrical performance of devices fabricated on thin virtual substrates grown by two different techniques is presented. It is found that self-heating is reduced and that thermal resistance measurements agree with modelling predictions. The reduction in performance enhancement seen in many strained Si MOSFETs is found here to be largely due to self-heating effects, rather than parasitics or the loss of strain.
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| 3. |
- Olsen, S. H., et al.
(författare)
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Strained Si/SiGe MOS technology : Improving gate dielectric integrity
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:3, s. 218-223
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Tidskriftsartikel (refereegranskat)abstract
- Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This work shows that high levels of stress attainable from globally strained Si/SiGe platforms can benefit gate leakage and reliability in addition to MOSFET channel mobility. Device self-heating due to the low thermal conductivity of SiGe is shown to be the dominating factor behind compromised performance against short channel strained Si/SiGe MOSFETs. Novel thin virtual substrates aimed at reducing self-heating effects are investigated. In addition to reducing self-heating effects, the thin Virtual substrates provide further improvements to gate oxide integrity, reliability and lifetime compared with conventional thick virtual substrates. This is attributed to tire lower surface roughness of the thin virtual substrates which arises due to the reduced interactions of strain-relieving misfit dislocations during thin Virtual substrate growth. Good agreement between experimental data and physical models is demonstrated, enabling gate leakage mechanisms to be identified. The advantages and challenges of using globally strained Si/SiGe to advance MOS technology are discussed.
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| 4. |
- O'Neill, A.G., et al.
(författare)
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Strained silicon technology
- 2007
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Ingår i: ICSICT-2006. - 1424401615 - 9781424401611 ; , s. 104-107
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Konferensbidrag (refereegranskat)abstract
- Following a brief review of strained silicon technology options, this paper presents results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. The work demonstrates that by using high quality thin virtual substrates the compromised performance enhancements commonly observed in short gate length MOSFETs and high bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated.
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