| 1. |
- Aiempanakit, Montri, et al.
(författare)
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Effect of peak power in reactive high power impulse magnetron sputtering of titanium dioxide
- 2011
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Ingår i: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 205:20, s. 4828-4831
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Tidskriftsartikel (refereegranskat)abstract
- The effect of peak power in a high power impulse magnetron sputtering (HiPIMS) reactive deposition of TiO(2) films has been studied with respect to the deposition rate and coating properties. With increasing peak power not only the ionization of the sputtered material increases but also their energy. In order to correlate the variation in the ion energy distributions with the film properties, the phase composition, density and optical properties of the films grown with different HiPIMS-parameters have been investigated and compared to a film grown using direct current magnetron sputtering (DCMS). All experiments were performed for constant average power and pulse on time (100W and 35 mu s, respectively), different peak powers were achieved by varying the frequency of pulsing. Ion energy distributions for Ti and O and its dependence on the process conditions have been studied. It was found that films with the highest density and highest refractive index were grown under moderate HiPIMS conditions (moderate peak powers) resulting in only a small loss in mass-deposition rate compared to DCMS. It was further found that TiO2 films with anatase and rutile phases can be grown at room temperature without substrate heating and without post-deposition annealing.
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| 2. |
- Aiempanakit, Montri, et al.
(författare)
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Hysteresis effect in reactive high power impulse magnetron sputtering of metal oxides
- 2011
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Konferensbidrag (refereegranskat)abstract
- In order to get high deposition rate and good film properties, the stabilization of the transition zone between the metallic and compound modes is beneficial. We have shown earlier that at least in some cases, HiPIMS can reduce hysteresis effect in reactive sputtering. In our previous work, mechanisms for the suppression/elimination of the hysteresis effect have been suggested. Reactive HiPIMS can suppress/eliminate the hysteresis effect in the range of optimum frequency [1] lead to the process stability during the deposition with high deposition rate. The mechanisms behind this optimum frequency may relate with high erosion rate during the pulse [2,3] and gas rarefaction effect in front of the target [4]. In this contribution, reactive sputtering process using high power impulse magnetron sputtering (HiPIMS) has been studied with focus on the gas rarefaction. Through variations in the sputtering conditions such as pulse frequencies, peak powers, and target area, their effect on the shape of current waveforms have been analyzed. The current waveforms in compound mode are strongly affected. Our experiments show that the shape and amplitude of peak current cannot be explained by the change of the secondary electron yield due to target oxidation only. Reduced rarefaction in compound mode contributes to the observed very high peak current values.
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| 3. |
- Aiempanakit, Montri, 1977-, et al.
(författare)
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Understanding the discharge current behavior in reactive high power impulse magnetron sputtering of oxides
- 2013
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:13, s. 133302-
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Tidskriftsartikel (refereegranskat)abstract
- The discharge current behavior in reactive high power impulse magnetron sputtering (HiPIMS) of Ti-O and Al-O is investigated. It is found that for both metals, the discharge peak current significantly increases in the oxide mode in contrast to the behavior in reactive direct current magnetron sputtering where the discharge current increases for Al but decreases for Ti when oxygen is introduced. In order to investigate the increase in the discharge current in HiPIMS-mode, the ionic contribution of the discharge in the oxide and metal mode is measured using time-resolved mass spectrometry. The energy distributions and time evolution are investigated during the pulse-on time as well as in the post-discharge. In the oxide mode, the discharge is dominated by ionized oxygen, which has been preferentially sputtered from the target surface. The ionized oxygen determines the discharge behavior in reactive HiPIMS.
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| 4. |
- Aijaz, Asim, et al.
(författare)
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A strategy for increased carbon ionization in magnetron sputtering discharges
- 2012
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Ingår i: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 23, s. 1-4
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Tidskriftsartikel (refereegranskat)abstract
- A strategy that facilitates a substantial increase of carbon ionization in magnetron sputtering discharges is presented in this work. The strategy is based on increasing the electron temperature in a high power impulse magnetron sputtering discharge by using Ne as the sputtering gas. This allows for the generation of an energetic C+ ion population and a substantial increase in the C+ ion flux as compared to a conventional Ar-HiPIMS process. A direct consequence of the ionization enhancement is demonstrated by an increase in the mass density of the grown films up to 2.8 g/cm(3); the density values achieved are substantially higher than those obtained from conventional magnetron sputtering methods.
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| 5. |
- Aijaz, Asim, et al.
(författare)
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Deposition of thermochromic vanadium dioxide thin films by reactive high power impulse magnetron sputtering
- 2014
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Vanadium dioxide exhibits a reversible phase transition from semiconducting state (monoclinic structure) to a metallic state (tetragonal structure) at ~68 oC. This so-called metal-insulator transition (MIT) entails thermochromic behavior manifested by large changes in optical properties, such as high infrared transmittance modulation in thin films, thereby making VO2-based films a suitable candidate for optical switching applications such as self-tunable infrared filters. Thermochromic VO2 thin films have been widely investigated for optical applications, but high growth temperatures (> 400 oC) required for synthesizing crystalline VO2 thin films, high MIT temperature (68 oC) as well as low visible transmittance (typically ~50%) limit their applicability for example for energy efficient smart windows. Synthesis of metal-oxide thin films using highly ionized vapor fluxes has been shown to facilitate low-temperature film growth as well as control over phase formation and resulting film properties. In the present work, we synthesize VO2 thin films by use of highly ionized vapor fluxes that are generated by high power impulse magnetron sputtering (HiPIMS). In order to establish a correlation between the plasma and film properties, we investigate the discharge characteristics by analyzing the discharge current-voltage characteristics under varied process parameters such as peak-power, pulse-width and gas phase composition and grow VO2 thin films under suitable process conditions. We investigate the effect of growth temperature (room temperature to 500 oC), energy of the deposition flux (controlled by substrate bias potential) and type of substrate (Si, glass, ITO-coated glass) on crystallinity, phase formation and on optical properties (visible transmittance and infrared modulation) of the resulting thin films. For reference, the discharge characteristics and properties of films deposited by pulsed direct current magnetron sputtering are also studied.
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| 6. |
- Aijaz, Asim, et al.
(författare)
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Dual-magnetron open field sputtering system for sideways deposition of thin films
- 2010
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Ingår i: SURFACE and COATINGS TECHNOLOGY. - : Elsevier BV. - 0257-8972. ; 204:14, s. 2165-2169
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Tidskriftsartikel (refereegranskat)abstract
- A dual-magnetron system for deposition inside tubular substrates has been developed. The two magnetrons are facing each other and have opposing magnetic fields forcing electrons and thereby also ionized material to be transported radially towards the substrate. The depositions were made employing direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS). To optimize the deposition rate, the system was characterized at different separation distances between the magnetrons under the same sputtering conditions. The deposition rate is found to increase with increasing separation distance independent of discharge technique. The emission spectrum from the HiPIMS plasma shows a highly ionized fraction of the sputtered material. The electron densities of the order of 10(16) m(-3) and 10(18) m(-3) have been determined in the DCMS and the HiPIMS plasma discharges respectively. The results demonstrate a successful implementation of the concept of sideways deposition of thin films providing a solution for coating complex shaped surfaces.
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| 7. |
- Aijaz, Asim, et al.
(författare)
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Exploring the potential of high power impulse magnetron sputtering for the synthesis of scratch resistant, antireflective coatings
- 2013
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Broad band anti-reflective multilayer coatings require the use of a low-index material as a top layer. Normally SiO2 is used which exhibits sufficiently low refractive index (~1.5 at 550 nm) yet its low hardness (~10 GPa) hinders its application in abrasive environments. A strategy to circumnavigate these limitations is the synthesis of multicomponent materials that combine good mechanical and optical performance. In this work we synthesize Al-Si-O thin films seeking to combine the low refractive index of SiO2 and the relatively high hardness of Al2O3. The potential of reactive high power impulse magnetron sputtering (HiPIMS) for synthesizing Al-Si-O suitable for top-layers in anti-reflective coating stacks is explored by depositing films in an Ar+O2 ambient under varied target compositions (Al0.5Si0.5 and Al0.1Si0.9). The behavior of discharge current in metal and oxide mode is correlated with the plasma composition, plasma energetics as well as target surface composition in order to obtain information about the chemical nature and the energy of the film forming species. Plasma composition and plasma energetics are investigated by measuring electron density, electron temperature as well as energy distributions and as fluxes of Ar+, Al+, Si+ and O+ ions. Monte-Carlo based computer simulations are employed to assess the ion-target surface interactions to gain insight into the discharge characteristics as well as film growth. The properties of the grown films (chemical composition, mechanical and optical properties) are investigated and an understanding of the reactive HiPIMS-based growth of anti-reflective Al-Si-O thin films is established. For reference, the plasma and film properties of Al-O are also studied.
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| 8. |
- Aijaz, Asim
(författare)
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HiPIMS-based Novel Deposition Processes for Thin Films
- 2012
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- In this research, high power impulse magnetron sputtering (HiPIMS) based new deposition processes are introduced to address; the issue of low degree of ionization of C in magnetron sputtering discharges, and the difficulty encountered in thin film deposition on complex-shaped surfaces. The issue of low degree of C ionization is addressed by introducing a new strategy which is based on promoting the electron impact ionization ofC by increasing the electron temperature in the plasma discharge using Ne, instead of conventionally used Ar. The Ne-based HiPIMS process provides highly ionized C fluxes which are essential for the synthesis of high-density and sp3 rich amorphous carbon (a-C) thin films such as diamond-like carbon (DLC) and tetrahedral a-C (ta-C). The feasibility of coating complex-shaped surfaces is demonstrated by using the dual-magnetron approach in an open-field (magnetic field of the magnetrons) configuration and performing sideways deposition of Ti films. The HiPIMS-based open-field configuration process enhances the sideways transport of the sputtered flux — an effect which is observed in the case of HiPIMS.The characterization of the Ne-HiPIMS discharge using a Langmuir probe and mass spectrometry shows that it provides an increase in the electron temperature resulting in an order of magnitude decrease in the mean ionization length of the sputtered C as compared to the conventional Ar-HiPIMS discharge. The C1+ ion energy distribution functions exhibit the presence of an energetic C1+ ion population and a substantial increase in the total C1+ ion flux. The higher C1+ ion flux facilitates the growth of sp3 rich carbon films with mass densities, measured by x-ray reflectometry, reaching as high as approx. 2.8 gcm-3.The dual-magnetron open-field configuration process is operated in DCMS as well as in HiPIMS modes. The plasma characterization, performed by Langmuir probe measurements and optical emission spectroscopy, shows that the plasma density in the Ti-HiPIMS discharge is higher than that of the Ti-DCMS discharge. This results in the higher ionized fraction of the sputtered Ti in the case of HiPIMS. The film uniformity and the deposition rate of the film growth, obtained by employing scanning electron microscopy, demonstrate that the sideways deposition approach can be used for depositing thin films on complex-shaped surfaces.
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| 9. |
- Aijaz, Asim, et al.
(författare)
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Industrial Scale Deposition of Diamond-like Carbon Thin Films using Ne-based HiPIMS Discharge
- 2015
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- High power impulse magnetron sputtering (HiPIMS) has been successful in providing highly ionized deposition fluxes for most common metals (Cu, Al, Ti). However, it is challenged when non-metals such as carbon is considered. Highly ionized carbon fluxes (up to 100%) are essential for the synthesis of diamond-like carbon and tetrahedral amorphous carbon thin films. Earlier reports have shown that the C+/C0 ratio in HiPIMS does not exceed 5% and film densities and sp3/sp2 bond fractions are substantially lower than those achieved using ionized physical vapour deposition based methods such as filtered cathodic vacuum arc and pulsed laser deposition. In our previous work, we demonstrated that Ne-based HiPIMS discharge entails energetic electrons as compared to Ar-based HiPIMS discharge facilitating the generation of highly ionized C fluxes as well as diamond-like carbon thin films with mass densities in the order of 2.8 g/cm3In this work, we perform industrial scale deposition of diamond-like carbon thin films using Ne- as well as Ar-based HiPIMS discharge. In order to investigate the effect of electron temperature enhancement and its correlation to generation of C1+ ion fluxes in Ne-based HiPIMS discharge, we perform time-averaged and time-resolved measurements of electron temperature as well as ion density at the substrate position using a flat probe. We also investigate the effect of plasma properties on the ionization of sputtered C as well as buffer gas species by measuring the optical emission from the discharge. In order to correlate the plasma and film properties, we synthesize C thin films under energetic deposition conditions and investigate structural (mass density, sp3/sp2 bond fraction, H content) and mechanical (hardness, elastic modulus, adhesion strength) properties of the resulting diamond-like carbon thin films.
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| 10. |
- Aijaz, Asim, et al.
(författare)
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Ion induced stress relaxation in dense sputter-deposited DLC thin films
- 2017
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 111:5
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Tidskriftsartikel (refereegranskat)abstract
- Deposition of high-density and low-stress hydrogen-free diamond like carbon (DLC) thin films is demonstrated using a pulsed ionized sputtering process. This process is based on high power impulse magnetron sputtering, and high C ionization is achieved using Ne as the sputtering gas. The intrinsic compressive stress and its evolution with respect to ion energy and ion flux are explained in terms of the compressive stress based subplantation model for DLC growth by Davis. The highest mass density was similar to 2.7 g/cm(3), and the compressive stresses did not exceed similar to 2.5 GPa. The resulting film stresses are substantially lower than those achieved for the films exhibiting similar mass densities grown by filtered cathodic vacuum arc and pulsed laser deposition methods. This unique combination of high mass density and low compressive stress is attributed to the ion induced stress relaxation during the pulse-off time which corresponds to the post thermal spike relaxation timescales. We therefore propose that the temporal ion flux variations determine the magnitude of the compressive stress observed in our films. Published by AIP Publishing.
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