| 1. |
- Kamiyama, Satoshi, et al.
(författare)
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Fluorescent SiC and its application to white light-emitting diodes
- 2011
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Ingår i: Journal of semiconductors. - : IOP Publishing. - 1674-4926. ; 32:1, s. 013004-1-013004-3
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Tidskriftsartikel (refereegranskat)abstract
- Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.
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| 2. |
- Kamiyama, Satoshi, et al.
(författare)
-
White light-emitting diode based on fluorescent SiC
- 2012
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 522, s. 23-25
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Tidskriftsartikel (refereegranskat)abstract
- A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC (f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the recombination of donor and acceptor pairs, the f-SiC substrate works as a phosphor for visible light emission. By employing the Fast Sublimation Growth Process method, the high-quality f-SiC substrate doped with N and B exhibited a nonradiative carrier lifetime of 55 mu s and an internal quantum efficiency (IQE) of 40%. With increasing donor and acceptor doping concentrations, a high IQE was estimated even at a high excitation level.
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