| 1. |
- Amin, Mohammed Nurul, et al.
(författare)
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Electrical and optical characteristics of Infrared Photodetectors based on InP nanowire
- 2011
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Ingår i: 14th International Conference on Computer and Information Technology, ICCIT 2011. - Piscataway, NJ : IEEE. ; , s. 629-634
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Tidskriftsartikel (refereegranskat)abstract
- High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, and allow a large wavelength range of detection as a receiver from 750 nm to 1.3-1.55 μm in the optical communication system. Since the last decade, the electrical and optical characteristics of photodetectors have been investigated to improve their performance and price. We have worked on two different type of infrared photodetectors based on nanowire. One photodetector was p-n photodiode, and the other one was p-i-n structure. We investigated the detector performance at 77K-300K temperature corresponding with wavelength in darkness and under illumination as regarding breakdown voltage, sensitivity, and quantum efficiency. We have also compared the differences between the two photodetectors performance characteristics. © 2011 IEEE.
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| 2. |
- Amin, Muhammed Nurul, et al.
(författare)
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Electro-optical characterisation of inp nanowire based p-n, p-i-n infrared photodetectors
- 2012
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Ingår i: Journal of Communications. - Rowland Heights, CA : Engineering and Technology Publishing. - 1796-2021 .- 2374-4367. ; 7:11, s. 808-820
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Tidskriftsartikel (refereegranskat)abstract
- High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3-1.55 pm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultraviolet into the electrical signal that is convenient for measurement. Since the last decade, the electro-optical characterisation of photodetectors has been investigated to improve their performance and price. In this paper, we are going to discuss the characterisation of the two different type infrared photodectors based on nanowire that we have worked on our project. One photodetector is p- n nanowire structure, and another is p-i-n structure. Both photodetectors is worked based on internal photoelectric effect and on the theory of p-n junction. We investigated the detector performance at 77K-300K temperature corresponding with wavelength in darkness and under illumination as regarding breakdown voltage, sensitivity, and quantum efficiency. We have also compared the differences between the two photodetectors performance characteristics. © 2012 ACADEMY PUBLISHER.
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