| 1. |
- Alsufyani, Maryam, et al.
(författare)
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Lactone Backbone Density in Rigid Electron-Deficient Semiconducting Polymers Enabling High n-type Organic Thermoelectric Performance
- 2022
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Ingår i: Angewandte Chemie International Edition. - : WILEY-V C H VERLAG GMBH. - 1433-7851 .- 1521-3773. ; 61:7
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Tidskriftsartikel (refereegranskat)abstract
- Three lactone-based rigid semiconducting polymers were designed to overcome major limitations in the development of n-type organic thermoelectrics, namely electrical conductivity and air stability. Experimental and theoretical investigations demonstrated that increasing the lactone group density by increasing the benzene content from 0 % benzene (P-0), to 50 % (P-50), and 75 % (P-75) resulted in progressively larger electron affinities (up to 4.37 eV), suggesting a more favorable doping process, when employing (N-DMBI) as the dopant. Larger polaron delocalization was also evident, due to the more planarized conformation, which is proposed to lead to a lower hopping energy barrier. As a consequence, the electrical conductivity increased by three orders of magnitude, to achieve values of up to 12 S cm and Power factors of 13.2 mu Wm(-1) K-2 were thereby enabled. These findings present new insights into material design guidelines for the future development of air stable n-type organic thermoelectrics.
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| 2. |
- Alsufyani, Maryam, et al.
(författare)
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The effect of aromatic ring size in electron deficient semiconducting polymers for n-type organic thermoelectrics
- 2020
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Ingår i: Journal of Materials Chemistry C. - : ROYAL SOC CHEMISTRY. - 2050-7526 .- 2050-7534. ; 8:43, s. 15150-15157
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Tidskriftsartikel (refereegranskat)abstract
- N-type semiconducting polymers have been recently utilized in thermoelectric devices, however they have typically exhibited low electrical conductivities and poor device stability, in contrast to p-type semiconductors, which have been much higher performing. This is due in particular to the n-type semiconductors low doping efficiency, and poor charge carrier mobility. Strategies to enhance the thermoelectric performance of n-type materials include optimizing the electron affinity (EA) with respect to the dopant to improve the doping process and increasing the charge carrier mobility through enhanced molecular packing. Here, we report the design, synthesis and characterization of fused electron-deficient n-type copolymers incorporating the electron withdrawing lactone unit along the backbone. The polymers were synthesized using metal-free aldol condensation conditions to explore the effect of enlarging the central phenyl ring to a naphthalene ring, on the electrical conductivity. When n-doped with N-DMBI, electrical conductivities of up to 0.28 S cm(-1), Seebeck coefficients of -75 mu V K-1 and maximum Power factors of 0.16 mu W m(-1) K-2 were observed from the polymer with the largest electron affinity of -4.68 eV. Extending the aromatic ring reduced the electron affinity, due to reducing the density of electron withdrawing groups and subsequently the electrical conductivity reduced by almost two orders of magnitude.
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| 3. |
- Chen, Hu, et al.
(författare)
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Acene Ring Size Optimization in Fused Lactam Polymers Enabling High n-Type Organic Thermoelectric Performance
- 2021
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Ingår i: Journal of the American Chemical Society. - : AMER CHEMICAL SOC. - 0002-7863 .- 1520-5126. ; 143:1, s. 260-268
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Tidskriftsartikel (refereegranskat)abstract
- Three n-type fused lactam semiconducting polymers were synthesized for thermoelectric and transistor applications via a cheap, highly atom-efficient, and nontoxic transition-metal free aldol polycondensation. Energy level analysis of the three polymers demonstrated that reducing the central acene core size from two anthracenes (A-A), to mixed naphthalene-anthracene (A-N), and two naphthalene cores (N-N) resulted in progressively larger electron affinities, thereby suggesting an increasingly more favorable and efficient solution doping process when employing 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI) as the dopant. Meanwhile, organic field effect transistor (OFET) mobility data showed the N-N and A-N polymers to feature the highest charge carrier mobilities, further highlighting the benefits of aryl core contraction to the electronic performance of the materials. Ultimately, the combination of these two factors resulted in N-N, A-N, and A-A to display power factors (PFs) of 3.2 mu W m(-1) K-2, 1.6 mu W m(-1 )K(-2), and 0.3 mu W m(-1) K-2, respectively, when doped with N-DMBI, whereby the PFs recorded for N-N and A-N are among the highest reported in the literature for n-type polymers. Importantly, the results reported in this study highlight that modulating the size of the central acene ring is a highly effective molecular design strategy to optimize the thermoelectric performance of conjugated polymers, thus also providing new insights into the molecular design guidelines for the next generation of high-performance n-type materials for thermoelectric applications.
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| 4. |
- Gorenflot, Julien, et al.
(författare)
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Increasing the Ionization Energy Offset to Increase the Quantum Efficiency in Non-Fullerene Acceptor-Based Organic Solar Cells: How Far Can We Go?
- 2023
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Ingår i: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; In Press
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Tidskriftsartikel (refereegranskat)abstract
- Molecular engineering of organic semiconductors provides a virtually unlimited number of possible structures, yet only a handful of combinations lead to state-of-the-art efficiencies in photovoltaic applications. Thus, design rules that guide material development are needed. One such design principle is that in a bulk heterojunction consisting of an electron donor and lower bandgap acceptor an offset (Delta IE) of at least 0.45 eV is required between both materials ionization energies to overcome energy level bending at the donor-acceptor interface, in turn maximizing the charge separation yield and the cell's internal quantum efficiency. The present work studies energy losses associated with Delta IE and, based on 24 blends, finds that losses are minimal up to a Delta IE of 0.6 eV. Electroluminescence spectroscopy shows that low energy losses are achieved when the charge transfer state energy (E-CT) is similar to the acceptor's optical bandgap (E-g(A)). Further Delta IE increase lowers E-CT with respect to E-g(A), thus decreasing V-OC. Within that 0.45-0.6 eV Delta IE sweet range, the fill factor FF, hence the power conversion efficiency, increases only marginally as the FF is often already close to maximal for Delta IE = 0.45 eV. The results are extended to 76 binary and ternary blends.
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| 5. |
- Simatos, Dimitrios, et al.
(författare)
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Effects of Processing-Induced Contamination on Organic Electronic Devices
- 2023
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Ingår i: Small Methods. - : Wiley. - 2366-9608. ; 7:11
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Tidskriftsartikel (refereegranskat)abstract
- Organic semiconductors are a family of pi-conjugated compounds used in many applications, such as displays, bioelectronics, and thermoelectrics. However, their susceptibility to processing-induced contamination is not well understood. Here, it is shown that many organic electronic devices reported so far may have been unintentionally contaminated, thus affecting their performance, water uptake, and thin film properties. Nuclear magnetic resonance spectroscopy is used to detect and quantify contaminants originating from the glovebox atmosphere and common laboratory consumables used during device fabrication. Importantly, this in-depth understanding of the sources of contamination allows the establishment of clean fabrication protocols, and the fabrication of organic field effect transistors (OFETs) with improved performance and stability. This study highlights the role of unintentional contaminants in organic electronic devices, and demonstrates that certain stringent processing conditions need to be met to avoid scientific misinterpretation, ensure device reproducibility, and facilitate performance stability. The experimental procedures and conditions used herein are typical of those used by many groups in the field of solution-processed organic semiconductors. Therefore, the insights gained into the effects of contamination are likely to be broadly applicable to studies, not just of OFETs, but also of other devices based on these materials.
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