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- Nguyen, Son Tien, 1953-, et al.
(författare)
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Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
- 1999
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 273-274, s. 655-658
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Tidskriftsartikel (refereegranskat)abstract
- Defects in p-type 4H and 6H SiC irradiated by 2.5 MeV electrons were studied by electron paramagnetic resonance (EPR). Two anisotropic EPR spectra, labeled I and II, were observed in both 4H and 6H SiC. These spectra demonstrating triclinic symmetry of the center can be described by an effective electron spin S=1/2. The angle α between the direction of the principal gz of the g-tensors and the c-axis is determined as 63° and 50° for spectra I and II, respectively. In the 6H polytype, a third also similar EPR spectrum was detected. Based on their similarity in the electronic structure (electron spin, symmetry, g values), annealing behavior and temperature dependence, these spectra are suggested to be related to the same defect occupying different inequivalent lattice sites in 4H and 6H SiC. A pair between a silicon vacancy and an interstitial is a possible model for the defect.
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