| 1. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A Broadband 60-to-120 GHz single-chip MMIC multiplier chain
- 2009
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 441-444
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Konferensbidrag (refereegranskat)abstract
- This paper presents a single-chip 60 GHz to 120 GHz frequency multiplier chain based on 0.1 ?m GaAs mHEMT. The MMIC can deliver 3 to 5 dBm of output power from 110 GHz to 130 GHz with 2 dBm input power and consumes only 65 mW of DC power. The signal at the fundamental frequency is suppressed more than 20 dB over the band of interest. The impedance matching networks are realized using coupled transmission lines.
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| 2. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
- 2011
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
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| 3. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation
- 2009
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:12, s. 3134-3142
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Tidskriftsartikel (refereegranskat)abstract
- Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 mu m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc power. The signal at the fundamental frequency is suppressed more than 25 dB compared to the desired output signal over the band of interest. The G-band frequency sextupler (x6) chain covers 155 to 195 GHz with 0 dBm peak output power and requires 6.5 dBm input power and 92.5 mW dc power. The input signal to the multiplier chain can be reduced to 4 dBm while the output power drops only by 0.5 dB. The unwanted harmonics are suppressed more than 30 dB compared to the desired signal. An additional 183 GHz power amplifier is presented to be used after the x6 frequency multiplier chain if higher output power is required. The amplifier delivers 5 dBm output power with a small-signal gain of 9 dB from 155 to 195 GHz. The impedance matching networks are realized using coupled transmission lines which is shown to be a scalable and straightforward structure to use in amplifier design. Microstrip transmission lines are used in all the designs.
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| 4. |
- Andersson, Christer, 1982, et al.
(författare)
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A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation
- 2013
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Ingår i: 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013, Nuremberg, Germany, 7-10 October 2013. - 9782874870316 ; , s. 283-286
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Konferensbidrag (refereegranskat)abstract
- Output power scaling based on class-J dynamic load modulation (DLM) theory is used to design an unprecedentedly high power microwave transmitter with varactor-based DLM functionality. Matching networks are realized on high dielectric constant substrates in order to reduce the form factor. The fully matched DLM PA incorporates a 24-mm GaN HEMT powerbar and a stack of four SiC varactors, all fit into a CuW package (40 mm × 20 mm). Peak output power is reconfigurable by changing the drain voltage, while retaining the DLMeffect. Under pulsed conditions at 40 V the PA delivers a peak power of 86 W at 2.14 GHz. Efficiency enhancement by DLM is 10-15 percentage-units at 6 dB output power back-off (OPBO). Employing digital predistortion (DPD) with a vector switched generalized memory polynomial (VS-GMP) the ACLR is -46 dBc at an average output power of 17 W and a drain efficiency of 34%. These results prove the potential for high output power levels in varactor-based DLM transmitters.
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| 5. |
- Andersson, Christer, 1982, et al.
(författare)
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Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation
- 2012
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 60:12, s. 3778-3786
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Tidskriftsartikel (refereegranskat)abstract
- A theory for class-J microwave amplifier operation as a function of drive level and fundamental load impedance is derived. Calculations show that, under appropriate operating conditions, it is sufficient to modulate the transistor load reactance to enable high-efficiency operation (>70%) over a large output power dynamic range (>10 dB) with high transistor power utilization. Such dynamic load modulation (DLM) networks are an ideal application of continuously tunable varactor technologies. Multiharmonic load–pull measurements are performed on a GaN HEMT and experimentally verify the theory of operation. A demonstrator amplifier using an SiC varactor technology is then designed and characterized by static measurements. The amplifier has a peak power of 38 dBm at 2.08 GHz and maintains efficiencies above 45% over 8 dB of power dynamic range. An analysis of the load network losses is performed to show the potential of the class-J DLM transmitter concept.
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| 6. |
- Angelov, Iltcho, 1943, et al.
(författare)
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A balanced millimeter wave doubler based on pseudomorphic HEMTs
- 1992
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Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 1, s. 353-356
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Konferensbidrag (refereegranskat)abstract
- A balanced HEMT (high electron mobility transistor) doubler for operation at millimeter waves has been analyzed, fabricated, and characterized. Particular attention has been paid to the influence of the output circuit on the performance of the doubler. The doubler was analyzed with a harmonic balance method and an output power of 4 dBm at 42 GHz was obtained experimentally. The conversion gain is approximately -1 dB at 40 GHz at an input power of 5 dBm. Bias and frequency response were very close to the predicted ones.
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| 7. |
- Angelov, Iltcho, 1943, et al.
(författare)
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A new empirical nonlinear model for HEMT-devices
- 1992
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Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 0780306112 ; 3, s. 1583-1586
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Konferensbidrag (refereegranskat)abstract
- A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.
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| 8. |
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| 9. |
- Angelov, Iltcho, 1943, et al.
(författare)
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CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD
- 2006
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Ingår i: EUMC2006 Manchester. ; 1:1
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Konferensbidrag (refereegranskat)abstract
- A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
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| 10. |
- Angelov, Iltcho, 1943, et al.
(författare)
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CMOS large signal model for CAD
- 2003
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Ingår i: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646
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Konferensbidrag (refereegranskat)
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