SwePub - sökning: WFRF:(Aseev P.)

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1.	Alvi, N.H., et al. (författare) Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network 2014 Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 104:22, s. 223104-1-223104-3 Tidskriftsartikel (refereegranskat)abstract We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC.

Alvi, N.H., et al. (författare)
Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network
2014
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 104:22, s. 223104-1-223104-3
Tidskriftsartikel (refereegranskat)abstract
- We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC.

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