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- Markevich, V.P., et al.
(författare)
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Electronic properties of vacancy-oxygen complexes in SiGe alloys
- 2003
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 340, s. 790-4
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Tidskriftsartikel (refereegranskat)abstract
- Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0
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