| 1. |
- Andersson, Eric, 1992, et al.
(författare)
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Nondestructive cleaning of the LaAlO3/SrTiO3 surface with ultraviolet light and ozone
- 2016
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Ingår i: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. - : American Vacuum Society. - 2166-2746 .- 2166-2754. ; 34:4
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Tidskriftsartikel (refereegranskat)abstract
- The effect of ultraviolet light produced ozone and irradiation (UV/ozone) cleaning on the surface properties and interface electrical properties of 4 unit cell (uc) LaAlO3/SrTiO3 samples is examined. A standard photolithography process is used to contaminate the samples which are then cleaned in UV/ozone. Atomic force microscopy measurements show that the photoresist contaminated samples can be cleaned efficiently using this method. The surface roughness of the cleaned samples is comparable to that of the as-grown samples. Furthermore, electrical transport measurements show that the mobility decreases and the sheet carrier density increases for the contaminated samples, which also display indications of an onset to the Kondo effect. By removing the contaminants with UV/ozone cleaning, the mobility and sheet carrier density can be partially restored toward the as-grown values. The mobility is increased by about two times from approximate to 1000 cm(2) V-1 s(-1) for the contaminated samples to approximate to 2000 cm(2) V-1 s(-1) for the ozone cleaned ones. (C) 2016 American Vacuum Society.
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| 2. |
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| 3. |
- Aurino, Pier Paolo, 1985, et al.
(författare)
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Nano-patterning of the electron gas at the LaAlO3/SrTiO3 interface using low-energy ion beam irradiation
- 2013
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:20, s. 201610-
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Tidskriftsartikel (refereegranskat)abstract
- The quasi-two dimensional electron gas formed at the interface between LaAlO3 (LAO) and SrTiO3 (STO) shows fascinating properties, such as two-dimensional superconductivity, giant electric field effect, and the possible co-existence of ferromagnetic and superconducting phases. In this work, we demonstrate that the conducting LAO/STO interface can be made insulating after short irradiation by a beam of low energy Ar+ ions. The irradiation process does neither result in physical removal of the LAO film nor produces oxygen vacancies in the STO layer. Using electron beam lithography and low ion beam energy irradiation, we fabricated conducting nano-structures in the LAO/STO interface with dimensions down to 50 nm. Such a reliable and robust method of nano-patterning may be a prerequisite for future electronic applications of the LAO/STO interface.
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| 4. |
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| 5. |
- Aurino, Pier Paolo, 1985, et al.
(författare)
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Retention of Electronic Conductivity in LaAlO3/SrTiO3 Nanostructures Using a SrCuO2 Capping Layer
- 2016
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Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 6:2
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Tidskriftsartikel (refereegranskat)abstract
- The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique playground to study the interplay and competitions between different ordering phenomena in a strongly correlated two- dimensional electron gas. Recent studies of the LAO/STO interface reveal the inhomogeneous nature of the 2DEG that strongly influences electrical-transport properties. Nanowires needed in future applications may be adversely affected, and our aim is, thus, to produce a more homogeneous electron gas. In this work, we demonstrate that nanostructures fabricated in the quasi-2DEG at the LaAlO3/SrTiO3 interface, capped with a SrCuO2 layer, retain their electrical resistivity and mobility independent of the structure size, ranging from 100 nm to 30 mu m. This is in contrast to noncapped LAO/STO structures, where the room-temperature electrical resistivity significantly increases when the structure size becomes smaller than 1 mu m. High-resolution intermodulation electrostatic force microscopy reveals an inhomogeneous surface potential with "puddles" of a characteristic size of 130 nm in the noncapped samples and a more uniform surface potential with a larger characteristic size of the puddles in the capped samples. In addition, capped structures show superconductivity below 200 mK and nonlinear currentvoltage characteristics with a clear critical current observed up to 700 mK. Our findings shed light on the complicated nature of the 2DEG at the LAO/STO interface and may also be used for the design of electronic devices.
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| 6. |
- Aurino, Pier Paolo, 1985, et al.
(författare)
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Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces
- 2015
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 92:15
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Tidskriftsartikel (refereegranskat)abstract
- The conducting state of a quasi-two-dimensional electron gas (q2DEG), formed at the heterointerface between the two wide-bandgap insulators LaAlO3 (LAO) and SrTiO3, can be made completely insulating by low-energy, 150-eV, Ar+ irradiation. The metallic behavior of the interface can be recovered by high-temperature oxygen annealing. The electrical transport properties of the recovered q2DEG are exactly the same as before the irradiation. Microstructural investigations confirm that the transition is not due to physical etching or crystal lattice distortion of the LAO film below its critical thickness. They also reveal a correlation between electrical state, LAO film surface amorphization, and argon ion implantation. The experimental results are in agreement with density functional theory calculations of Ar implantation and migration in the LAO film. This suggests that the metal-insulator transition may be caused by charge trapping in the defect amorphous layer created during the ion irradiation.
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| 7. |
- Boikov, Iouri, 1949, et al.
(författare)
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Atomic rearrangements at the TiO2-terminated (001)SrTiO3 surface and growth of thin LaMnO3 films
- 2013
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Ingår i: Europhysics Letters. - : IOP Publishing. - 0295-5075 .- 1286-4854. ; 102:5
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Tidskriftsartikel (refereegranskat)abstract
- SrTiO3 is commonly used as a substrate for growth of various oxide films. Different reconstructions at the SrTiO3 surface have been claimed. A question is whether these survive subsequent depositions of thin films and influence film properties. Medium energy ion scattering (MEIS) was used to probe structure and composition of the surface layer of a TiO2-terminated (001) SrTiO3 single-crystal substrate and 1-4 unit cell (u.c.) thick LaMnO3 epilayers. Aligned spectra indicate enrichment of Ti at the surface and a TiO2 double-layer (DL) configuration. The DL arrangement survives pulsed-laser deposition of LaMnO3 in a background of high oxygen pressure (5 x 10(-2) mbar) while it is destroyed at lower oxygen pressure (10(-4) mbar). Simulations of random MEIS spectra indicate substantial interdiffusion and La doping of the substrate surface but all interfaces are nevertheless insulating.
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| 8. |
- Kalaboukhov, Alexei, 1975, et al.
(författare)
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Electrical and structural properties of ABO3/SrTiO3 interfaces
- 2012
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Ingår i: Materials Research Society Symposium Proceedings. - Warrendale, Pa. : Springer Science and Business Media LLC. - 0272-9172. - 9781605114316 ; 1454, s. 167-172, s. 167-172
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Konferensbidrag (refereegranskat)abstract
- Electrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2 terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.
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| 9. |
- Kalaboukhov, Alexei, 1975, et al.
(författare)
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Homogeneous superconductivity at the LaAlO3/SrTiO3 interface probed by nanoscale transport
- 2017
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 96:18
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Tidskriftsartikel (refereegranskat)abstract
- An interface between LaAlO3 and SrTiO3 (LAO/STO) may host two-dimensional superconductivity, strong spin-orbit coupling, and magnetic ordering. There are indications that the interfacial superconducting layer is nonhomogeneous at the nanoscale. The presence of inhomogeneities may have strong implications on the superconducting transport properties and lead to formation of weak links between superconducting regions. In this paper, we report on the temperature and magnetic field dependence of superconducting transport in single nanowires and nanorings fabricated in a LAO/STO interface. The analysis of data proves that our nanostructures behave like uniform superconducting filaments carrying a critical current close to the theoretical Ginzburg-Landau depairing limit. Furthermore, we unexpectedly find an enhancement of the critical current of LAO/STO nanowires and nanorings at low temperature when a magnetic field is applied. Our results point towards the coexistence of a homogeneous interfacial superconductivity and spatially separated magnetism at the LAO/STO interface.
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| 10. |
- Kalaboukhov, Alexei, 1975, et al.
(författare)
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Inhomogeneous Microstructure and Electrical Transport Properties at the LaAlO3/SrTiO3 Interface
- 2012
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Ingår i: Japanese Journal of Applied Physics. - 1347-4065 .- 0021-4922. ; 51:11(spec.issue), s. article no. 11PG10 -
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Tidskriftsartikel (refereegranskat)abstract
- Medium-energy ion spectroscopy (MEIS), scanning transmission electron microscopy (STEM) and X-ray photoemission spectroscopy (XPS) were used to investigate the composition and microstructure of LaAlO3/SrTiO3 (LAO/STO) interfaces grown by pulsed laser deposition of LAO on TiO2-terminated STO substrates under different oxidizing conditions. MEIS and XPS indicated Sr/La and Al/Ti intermixing within several atomic layers at all studied interfaces. XPS and STEM revealed that La diffuses deeper than Al. Analysis of the MEIS data suggests inhomogeneous lateral distribution of the diffused elements. This is further supported by the observation of a large positive magneto-resistance at low temperatures. We discuss the role of lateral inhomogeneities on the formation of the electron gas at the LAO/STO interface.
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