| 1. |
- Buondonno, A., et al.
(författare)
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A Hub and Spoke Learning Program in Bariatric Surgery in a Small Region of Italy
- 2022
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Ingår i: Frontiers in Surgery. - : Frontiers Media SA. - 2296-875X. ; 9
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Tidskriftsartikel (refereegranskat)abstract
- BackgroundMetabolic and bariatric surgery (BS) are considered life-changing and life-saving treatments for obese patients. The Italian Society of Obesity Surgery (SICOB) requires at least 25 operations per year to achieve the standard of care in the field. Despite the increasing need to treat obese patients, some small southern regions of Italy, such as Molise, do not have enough experience in bariatric procedures to be allowed to perform them. Therefore, our aim was to run a Hub and Spoke Program with a referral center in BS to treat obese patients and provide a proper learning curve in BS in Molise. MethodsIn 2020, the "A. Cardarelli Hospital" in Campobasso, Molise, started a formal "Learning Model of Hub and Spoke Collaboration" with the Hub center "Ospedale Del Mare", Naples. A multidisciplinary approach was achieved. Patients were supervised and operated under the supervision and tutoring of the referral center. We retrospectively reviewed our prospectively collected database from February 2020 to August 2021 in order to analyze the safety and effectiveness of our learning program. ResultsIn total, 13 (3 men and 10 women) patients underwent BS with the mean age of 47.08 years and a presurgery BMI of 41.79. Seven (53.84%) patients were the American Society of Anesthesiologist (ASA) II, and 6 (46.16%) patients were ASA III. Twelve (92.31%) procedures were laparoscopic sleeve gastrectomies, 1 (7.69%) patient underwent endoscopic BioEnterics Intragastric Balloon (BIB) placement. One (8.33%) sleeve gastrectomy was associated to gastric band removal. Mean surgical time was 110.14 +/- 23.54 min. The mean length of stay was 4.07 +/- 2.40 days. No Clavien-Dindo >= III and mortality were reported. The follow-up program showed a mean decrease of 11.82 in terms of body mass index (BMI) value. The last 5 procedures were performed by the whole equips from "A. Cardarelli" under external tutoring without any impact on complication rate. ConclusionThe setup of a proper Hub and Spoke Program may allow to perform BS to provide the standard of care. This approach may reduce health costs and related patient migration.
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| 2. |
- Junesand, Carl, et al.
(författare)
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Heteroepitaxial Growth of Indium Phosphide from Nano-openings Made by Masking on a Si(001) Wafer
- 2010
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Ingår i: 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM). - 9781424459209
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Konferensbidrag (refereegranskat)abstract
- We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP: S growth shows that the boundary plane of the grown layer has a major impact on the luminescence, indicating preferential orientation-dependent doping. Moreover, although there is clear evidence that most of the threading dislocations originating in the InP seed layer/Si interface are blocked by the mask, it appears that new dislocations are generated. Some of these dislocations are bounding planar defects such as stacking faults, possibly generated by unevenness in the mask. Finally, patterns where coalescence takes place at higher thickness seem to result in a rougher surface.
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| 3. |
- Junesand, Carl, et al.
(författare)
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Heteroepitaxial Indium Phosphide on Silicon
- 2010
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Ingår i: SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS II. - : SPIE. - 9780819481924 ; , s. Q-1-Q-9
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- There is an intense interest on integration of III-V materials on silicon and silicon-on-insulator for realisation of optical interconnects, optical networking, imaging and disposable photonics for medical applications. Advances in photonic materials, structures and technologies are the main ingredients of this pursuit. We investigate nano epitaxial lateral overgrowth (NELOG) of InP material from the nano openings on a seed layer on the silicon wafer, by hydride vapour phase epitaxy (HVPE). The grown layers were analysed by cathodoluminescence (CL) in situ a scanning electron microscope, time-resolved photoluminescence (TR-PL), and atomic force microscope (AFM). The quality of the layers depends on the growth parameters such as the V/III ratio, growth temperature, and layer thickness. CL measurements reveal that the dislocation density can be as low as 2 - 3.10(7) cm(-2) for a layer thickness of similar to 6 mu m. For comparison, the seed layer had a dislocation density of similar to 1.10(9) cm(-2). Since the dislocation density estimated on theoretical grounds from TRPL measurements is of the same order of magnitude both for NELOG InP on Si and on InP substrate, the dislocation generation appears to be process related or coalescence related. Pertinent issues for improving the quality of the grown InP on silicon are avoiding damage in the openings due to plasma etching, pattern design to facilitate coalescence with minimum defects and choice of mask material compatible with InP to reduce thermal mismatch.
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| 4. |
- Lourdudoss, Sebastian, et al.
(författare)
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Heteroepitaxy and selective epitaxy for discrete and integrated devices
- 2006
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Ingår i: 2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES. - NEW YORK : IEEE. - 9781424405770 ; , s. 309-311
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Konferensbidrag (refereegranskat)abstract
- We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for Optical Code Division Multiplex Access (OCDMA) networking applications.
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| 5. |
- Olsson, Fredrik, et al.
(författare)
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Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration
- 2007
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 3:39, s. 23-29
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.
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| 6. |
- Sun, Yan-Ting, et al.
(författare)
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Sulfur-doped indium phosphide on silicon substrate brown by ELOG
- 2004
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 7:11, s. G269-G271
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Tidskriftsartikel (refereegranskat)abstract
- The epitaxial lateral overgrowth (ELOG) of sulfur-doped InP on masked InP/Si substrate in a low-pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High-energy transition at 825 nm due to the band-filling effect was observed in spectra at 80 K. The band edge transition at 875 nm has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations pinned by sulfur atoms due to impurity hardening.
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