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- Balmer, R. S., et al.
(författare)
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Unlocking diamond's potential as an electronic material
- 2008
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Ingår i: Philosophical Transactions. Series A. - London : Royal Society of London. - 1364-503X .- 1471-2962. ; 366:1863, s. 251-265
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30mAmm -1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.
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- Rashid, S. J., et al.
(författare)
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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 55:10, s. 2744-2756
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Tidskriftsartikel (refereegranskat)abstract
- High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.
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- Isberg, Jan, et al.
(författare)
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A lateral time-of-flight system for charge transport studies
- 2009
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Ingår i: Diamond and related materials. - Langford Lane, Kidlington, Oxford, OX5 1GB, United Kingdom : Elsevier Ltd. - 0925-9635 .- 1879-0062. ; 18:9, s. 1163-1166
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Tidskriftsartikel (refereegranskat)abstract
- A measurement system for lateral ToF charge carrier transport studies in intrinsic diamond is described. In the lateral ToF geometry, carriers travel close to the sample surface and the system is therefore particularly suited for studies of thin layers as well as the influence of different surface conditions on transport dynamics. A 213nm pulsed UV laser is used to create electron-hole pairs along a line focus between two parallel metal electrodes on one surface. The use of reflective UV-optics with short focal length allows for a narrow focal line and also for imaging the sample in UV or visible light without any dispersion. A clear hole transit was observed in one homoepitaxial single crystalline diamond film for which the substrate was treated by a Ar/Cl plasma etch prior to deposition. The hole transit signal was sufficiently clear to measure the near-surface hole drift mobility of about 860cm2/Vs across a contact spacing of 0.3mm.
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- Majdi, Saman, et al.
(författare)
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Single crystal diamond for infrared sensing applications
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:16, s. 163510-
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Tidskriftsartikel (refereegranskat)abstract
- The synthesis of new materials for thermal infrared (IR) detection has been an intensive research area in recent years. Among new semiconductor materials, synthetic diamond has the ability to function even under very high temperature and high radiation conditions. In the present work, diamond Schottky diodes with boron concentrations in the range of 1014 < B < 1017 cm−3 are presented as candidates for IR thermal sensors with an excellent temperature coefficient of resistance (−8.42%/K) and very low noise levels around 6.6 × 10−15 V2/Hz. This enables huge performance enhancements for a wide variety of systems, e.g., automotive and space applications.
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