| 1. |
- Amin, Gul, et al.
(författare)
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Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode
- 2010
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Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY. - 1862-6300. ; 207:3, s. 748-752
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Tidskriftsartikel (refereegranskat)abstract
- High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V-TFL) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for; the NTs were obtained as similar to 0.27 eV and 2.1 x 10(16) cm(-3), respectively. The same parameters were also extracted for the ZnO NRs The deep-level states observed crossponds to zinc interstitials (Zn-i), which are responsible for the violet emission.
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| 2. |
- Bano, Nargis, et al.
(författare)
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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC
- 2010
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Ingår i: Journal of Luminescence. - : Elsevier Science B.V., Amsterdam.. - 0022-2313 .- 1872-7883. ; 130:6, s. 963-968
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Tidskriftsartikel (refereegranskat)abstract
- Optical properties of ZnO nanorods (NRs) grown by vapour-liquid-solid (VLS) technique on 4H-p-SiC substrates were probed by cathodoluminescence (CL) measurements at room temperature and at 5 K complemented with electroluminescence. At room temperature the CL spectra for defect related emission intensity was enhanced with the electron beam penetration depth. We observed a variation in defect related green emission along the nanorod axis. This indicates a relatively poor structural quality near the interface between ZnO NRs and p-SiC substrate. We associate the green emission with oxygen vacancies. Analysis of the low-temperature (5 K) emission spectra in the UV region suggests that the synthesized nanorods contain shallow donors and acceptors.
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| 3. |
- Bano, Nargis, 1981-
(författare)
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Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)
- 2011
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. This thesis deals with ZnO NRs-hetero-junctions basedintrinsic WLEDs grown on p-SiC, n-SiC and p-type polymers. The NRs were grown by thelow temperature aqueous chemical growth (ACG) and the high temperature vapor liquid solid(VLS) method. The structural, electrical and optical properties of these WLEDs wereinvestigated and analyzed by means of scanning electron microscope (SEM), current voltage(I-V), photoluminescence (PL), cathodoluminescence (CL), electroluminescence (EL) anddeep level transient spectroscopy (DLTS). Room temperature (RT) PL spectra of ZnOtypically exhibit one sharp UV peak and possibly one or two broad deep level emissions(DLE) due to deep level defects in the bandgap. For obtaining detailed information about thephysical origin, growth dependence of optically active defects and their spatial distribution,especially to study the re-absorption of the UV in hetero-junction WLEDs structure depthresolved CL spectroscopy, is performed. At room temperature the CL intensity of the DLEband is increased with the increase of the electron beam penetration depth due to the increaseof the defect concentration at the ZnO NRs/substrate interface. The intensity ratio of the DLEto the UV emission, which is very useful in exploring the origin of the deep level emissionand the distribution of the recombination centers, is monitored. It was found that the deepcenters are distributed exponentially along the ZnO NRs and that there are more deep defectsat the root of ZnO NRs compared to the upper part. The RT-EL spectra of WLEDs illustrateemission band covering the whole visible range from 420 nm and up to 800 nm. The whitelightcomponents are distinguished using a Gaussian function and the components were foundto be violet, blue, green, orange and red emission lines. The origin of these emission lines wasfurther identified. Color coordinates measurement of the WLEDs reveals that the emitted lighthas a white impression. The color rendering index (CRI) and the correlated color temperature(CCT) of the fabricated WLEDs were calculated to be 80-92 and 3300-4200 K, respectively.
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| 4. |
- Bano, Nargis, et al.
(författare)
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Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method
- 2010
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Ingår i: Applied Physics A. - : Springer Science Business Media. - 0947-8396 .- 1432-0630. ; 100:2, s. 467-472
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Tidskriftsartikel (refereegranskat)abstract
- High quality vertically aligned ZnO nanorods (NRs) were grown by low-temperature aqueous chemical technique on 4H-n-SiC substrates. Schottky light-emitting diodes (LEDs) were fabricated. The current-voltage (I-V) characteristics of Schottky diodes reveal good rectifying behavior. Optical properties of the ZnO nanorods (NRs) were probed by cathodoluminescence (CL) measurements at room temperature complemented with electroluminescence (EL). The room-temperature CL spectra of the ZnO NRs exhibit near band edge (NBE) emission as well as strong deep level emission (DLE) centered at 690 nm. At room temperature the CL spectra intensity of the DLE was enhanced with the increase of the electron beam penetration depth due to the increase of defect concentration at the interface and due to the conversion of self-absorbed UV emission. We observed a variation in the DLE along the nanorod depth. This indicates a relatively lower structural quality near the interface between ZnO NRs and n-SiC substrate. The room-temperature CL spectra of SiC show very weak emission, which confirms that most of the DLE is originating from the ZnO NRs, and SiC has a minute contribution to the emission.
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| 5. |
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| 6. |
- Bano, Nargis, et al.
(författare)
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Study of Radiative Defects Using Current-Voltage Characteristics in ZnO Rods Catalytically Grown on 4H-p-SiC
- 2010
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Ingår i: JOURNAL OF NANOMATERIALS. - : Hindawi. - 1687-4110 .- 1687-4129. ; 2010
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Tidskriftsartikel (refereegranskat)abstract
- High-quality ZnO rods were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrate. The current transport mechanisms of the diodes at room temperature (RT) have been explained in term of the space-charge-limited current model based on the energy band diagram of ZnO rods/4H-p-SiC heterostructure. The tunneling mechanism via deep-level states was found to be the main conduction process at low-applied voltage but at trap-filled limit voltage VTFL all traps are filled and the space-charge-limited current conduction dominated the current transport. From the RT current voltage measurements, the energy of the deep level trap and the trap concentration were obtained as ∼0.24±0.02eV and 4.4×1018cm−3, respectively. The deep level states observed correspond to zinc interstitial (Zni ), responsible for the violet emission.
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| 7. |
- Bano, Nargis, et al.
(författare)
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ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method
- 2010
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 108:4, s. 043103-
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate white light luminescence from ZnO-organic hybrid light emitting diodes grown at 90 degrees C on flexible plastic substrate by aqueous chemical growth. The configuration used for the ZnO-organic hybrid white light emitting diodes (WLEDs) consists of a layer of poly (9, 9-dioctylfluorene) (PFO) on poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) coated plastic with top ZnO nanorods. Structural, electrical, and optical properties of these WLEDs were measured and analyzed. Room temperature electroluminescence spectrum reveals a broad emission band covering the range from 420 to 750 nm. In order to distinguish the white light components and contribution of the PFO layer we used a Gaussian function to simulate the experimental data. Color coordinates measurement of the WLED reveals that the emitted light has a white impression. The color rendering index and correlated color temperature of the WLED were calculated to be 68 and 5800 K, respectively.
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| 8. |
- Hussain, I, et al.
(författare)
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Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods
- 2012
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 112:6, s. 064506-
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Tidskriftsartikel (refereegranskat)abstract
- Schottky diodes with Au/ZnO nanorod (NR)/n-SiC configurations have been fabricated and their interface traps and electrical properties have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f), and conductance-frequency (G(p)/omega-omega) measurements. Detailed and systematic analysis of the frequency-dependent capacitance and conductance measurements was performed to extract the information about the interface trap states. The discrepancy between the high barrier height values obtained from the I-V and the C-V measurements was also analyzed. The higher capacitance at low frequencies was attributed to excess capacitance as a result of interface states in equilibrium in the ZnO that can follow the alternating current signal. The energy of the interface states (E-ss) with respect to the valence band at the ZnO NR surface was also calculated. The densities of interface states obtained from the conductance and capacitance methods agreed well with each other and this confirm that the observed capacitance and conductance are caused by the same physical processes, i.e., recombination-generation in the interface states. (C) 2012 American Institute of Physics.
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| 9. |
- Hussain, I., et al.
(författare)
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Study of intrinsic white light emission and its components from ZnO-nanorods/p-polymer hybrid junctions grown on glass substrates
- 2011
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Ingår i: Journal of Materials Science. - : Springer Verlag (Germany). - 0022-2461 .- 1573-4803. ; 46:23, s. 7437-7442
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Tidskriftsartikel (refereegranskat)abstract
- We report white-light luminescence from ZnO-organic hybrid light emitting diodes grown on glass substrate by low temperature aqueous chemical growth. The configuration used for the hybrid white light emitting diodes (HWLEDs) consists of two-layers of polymers (PEDOT:PSS/PFO) on glass with top ZnO nanorods. Electroluminescence spectra of the HWLEDs demonstrate the combination of emission bands arising from the radiative recombination in polymer and ZnO nanorods. In order to distinguish emission bands we used a Gaussian function to simulate the experimental data. The emitted white light was found to be the superposition of a blue line at 454 nm, a green emission at 540 nm, orange line at 617 nm, and finally a red emission at 680 nm. The transitions causing these emissions are identified and discussed in terms of the energy band diagram of the hybrid junction. Color coordinates measurement of the WLED reveals that the emitted light has a white impression with 70 color rendering index and correlated color temperature 5500 K. Comparison between ITO and aluminum top contacts and its influence on the emitted intensity is also discussed.
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| 10. |
- Hussain, Ijaz, et al.
(författare)
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Study of the Distribution of Radiative Defects and Reabsorption of the UV in ZnO Nanorods-Organic Hybrid White Light Emitting Diodes (LEDs)
- 2011
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Ingår i: Materials. - Basel, Switzerland : MDPI. - 1996-1944. ; 4:7, s. 1260-1270
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Tidskriftsartikel (refereegranskat)abstract
- In this study, the low temperature aqueous chemical growth (ACG) method was employed to synthesized ZnO nanorods to process-organic hybrid white light emitting diodes (LEDs) on glass substrate. Electroluminescence spectra of the hybrid white LEDs demonstrate the combination of emission bands arising from radiative recombination of the organic and ZnO nanorods (NRs). Depth resolved luminescence was used for probing the nature and spatial distribution of radiative defects, especially to study the re-absorption of ultraviolet (UV) in this hybrid white LEDs structure. At room temperature the cathodoluminescence (CL) spectra intensity of the deep band emission (DBE) is increased with the increase of the electron beam penetration depth due to the increase of defect concentration at the ZnO NRs/Polyfluorene (PFO) interface and probably due to internal absorption of the UV. A strong dependency between the intensity ratio of the UV to the DBE bands and the spatial distribution of the radiative defects in ZnO NRs has been found. The comparison of the CL spectra from the PFO and the ZnO NRs demonstrate that PFO has a very weak violet-blue emission band, which confirms that most of the white emission components originate from the ZnO NRs.
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