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| 2. |
- Antonov, A. N., et al.
(författare)
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The electron-ion scattering experiment ELISe at the International Facility for Antiproton and Ion Research (FAIR)-A conceptual design study
- 2011
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Ingår i: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. - : Elsevier BV. - 0168-9002 .- 0167-5087. ; 637:1, s. 60-76
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Tidskriftsartikel (refereegranskat)abstract
- The electron-ion scattering experiment ELISe is part of the installations envisaged at the new experimental storage ring at the International Facility for Antiproton and Ion Research (FAIR) in Darmstadt, Germany. It offers an unique opportunity to use electrons as probe in investigations of the structure of exotic nuclei. The conceptual design and the scientific challenges of ELISe are presented. (C) 2011 Elsevier B.V. All rights reserved.
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| 3. |
- Naghavi, N., et al.
(författare)
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Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)(2) based thin film photovoltaics : Present status and current developments
- 2010
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Ingår i: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 18:6, s. 411-433
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Tidskriftsartikel (refereegranskat)abstract
- The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO.
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| 4. |
- Igalson, M., et al.
(författare)
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Concentration of defects responsible for persistent photoconductivity in Cu (In,Ga)Se-2 : Dependence on material composition
- 2019
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Ingår i: Thin Solid Films. - : ELSEVIER SCIENCE SA. - 0040-6090 .- 1879-2731. ; 669, s. 600-604
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Tidskriftsartikel (refereegranskat)abstract
- Persistent photoconductivity (PPC) in thin Cu(In,Ga)Se-2 films is discussed within a model of relaxing defects acting as donors or acceptors depending on their configurational and charge state. The aim of this work is to identify the factors related to technological processes which affect the magnitude of PPC. We established a method of evaluation of the concentration of metastable defects in thin Cu(In,Ga)Se-2 films relating it to the position of the Fermi level in thermodynamic equilibrium and used it to compare and discuss the impact of preparation details on the PPC value. The main result is that deviation from Cu/(Ga + In) stoichiometry does not change the concentration of metastable defects. Post deposition annealing in selenium affects the PPC depending on the presence of sodium during the treatment, while the impact of sodium itself on the metastable defect concentration apparently depends on whether it is present during the Cu(In,Ga)Se-2 deposition process or whether it is supplied during post-deposition treatment.
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| 5. |
- Igalson, M., et al.
(författare)
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Excitation spectra of defect levels derived from photoinduced current transient spectroscopy - a tool for studying deep levels in Cu(In,Ga)Se2 compounds
- 2017
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 633:SI, s. 227-230
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Tidskriftsartikel (refereegranskat)abstract
- Energy required for the optical excitation of carriers onto defect levels is a parameter that compliments thermal activation energy and helps to understand the electronic properties of defects under study. Here a modification of the photoinduced current transient spectroscopy (PICTS) based on phase-sensitive detection is proposed which makes possible to measure the excitation spectra of defect levels. The representative results of the excitation spectra of the epitaxial CuGaSe2 and polycrystalline Cu(In,Ga)Se2 thin films are presented. They illustrate the usefulness of the method as a tool for studying defect properties by providing data that supplement information derived from standard PICTS spectroscopy.
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| 6. |
- Ledoux, X., et al.
(författare)
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The Neutrons for Science Facility at SPIRAL-2
- 2014
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Ingår i: Nuclear Data Sheets. - : Elsevier BV. - 0090-3752 .- 1095-9904. ; 119, s. 353-356
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Tidskriftsartikel (refereegranskat)abstract
- The Neutrons For Science (NFS) facility is a component of SPIRAL-2 laboratory under construction at Caen (France). SPIRAL-2 is dedicated to the production of high intensity Radioactive Ions Beams (RIB). It is based on a high-power linear accelerator (LINAG) to accelerate deuterons beams in order to produce neutrons by breakup reactions on a C converter. These neutrons will induce fission in U-238 for production of radioactive isotopes. Additionally to the RIB production, the proton and deuteron beams delivered by the accelerator will be used in the NFS facility. NFS is composed of a pulsed neutron beam and irradiation stations for cross-section measurements and material studies. The beams delivered by the LINAG will allow producing intense neutron beams in the 100 keV-40 MeV energy range with either a continuous or quasi-mono-energetic spectrum. At NFS available average fluxes will be up to 2 orders of magnitude higher than those of other existing time-of-flight facilities in the 1 MeV - 40 MeV range. NFS will be a very powerful tool for fundamental physics and application related research in support of the transmutation of nuclear waste, design of future fission and fusion reactors, nuclear medicine or test and development of new detectors. The facility and its characteristics are described, and several examples of the first potential experiments are presented.
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| 7. |
- Urbaniak, A., et al.
(författare)
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Signatures of extended defects in Cu(In,Ga)Se-2 observed using capacitance spectroscopy techniques
- 2019
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Ingår i: Journal of Physics and Chemistry of Solids. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0022-3697 .- 1879-2553. ; 134, s. 58-63
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Tidskriftsartikel (refereegranskat)abstract
- This work concerns the interpretation of defect spectroscopy signals in CuInSe2-and Cu(In,Ga)Se-2-based Schottky junctions and thin films, which are investigated using capacitance- and current-based techniques. Two common signals are distinguished. It is shown here that the activation energies and consequently the emission rates vary between the samples and are strongly correlated with the hole concentration in the material. Models that can account for these changes are discussed. Based on deep-level transient spectroscopy and conductivity measurements, we present arguments for the validity of the existing models and discuss the hypothesis that the observable signals may originate from extended defects in Cu(In,Ga)Se-2.
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