| 1. |
- Aamodt, K., et al.
(författare)
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The ALICE experiment at the CERN LHC
- 2008
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 3:S08002
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Forskningsöversikt (refereegranskat)abstract
- ALICE (A Large Ion Collider Experiment) is a general-purpose, heavy-ion detector at the CERN LHC which focuses on QCD, the strong-interaction sector of the Standard Model. It is designed to address the physics of strongly interacting matter and the quark-gluon plasma at extreme values of energy density and temperature in nucleus-nucleus collisions. Besides running with Pb ions, the physics programme includes collisions with lighter ions, lower energy running and dedicated proton-nucleus runs. ALICE will also take data with proton beams at the top LHC energy to collect reference data for the heavy-ion programme and to address several QCD topics for which ALICE is complementary to the other LHC detectors. The ALICE detector has been built by a collaboration including currently over 1000 physicists and engineers from 105 Institutes in 30 countries, Its overall dimensions are 16 x 16 x 26 m(3) with a total weight of approximately 10 000 t. The experiment consists of 18 different detector systems each with its own specific technology choice and design constraints, driven both by the physics requirements and the experimental conditions expected at LHC. The most stringent design constraint is to cope with the extreme particle multiplicity anticipated in central Pb-Pb collisions. The different subsystems were optimized to provide high-momentum resolution as well as excellent Particle Identification (PID) over a broad range in momentum, up to the highest multiplicities predicted for LHC. This will allow for comprehensive studies of hadrons, electrons, muons, and photons produced in the collision of heavy nuclei. Most detector systems are scheduled to be installed and ready for data taking by mid-2008 when the LHC is scheduled to start operation, with the exception of parts of the Photon Spectrometer (PHOS), Transition Radiation Detector (TRD) and Electro Magnetic Calorimeter (EMCal). These detectors will be completed for the high-luminosity ion run expected in 2010. This paper describes in detail the detector components as installed for the first data taking in the summer of 2008.
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| 2. |
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| 3. |
- Bagnara, D, et al.
(författare)
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A novel adoptive transfer model of chronic lymphocytic leukemia suggests a key role for T lymphocytes in the disease
- 2011
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Ingår i: Blood. - : American Society of Hematology. - 1528-0020 .- 0006-4971. ; 117:20, s. 5463-5472
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Tidskriftsartikel (refereegranskat)abstract
- Chronic lymphocytic leukemia (CLL) is an incurable adult disease of unknown etiology. Understanding the biology of CLL cells, particularly cell maturation and growth in vivo, has been impeded by lack of a reproducible adoptive transfer model. We report a simple, reproducible system in which primary CLL cells proliferate in nonobese diabetes/severe combined immunodeficiency/γcnull mice under the influence of activated CLL-derived T lymphocytes. By cotransferring autologous T lymphocytes, activated in vivo by alloantigens, the survival and growth of primary CFSE-labeled CLL cells in vivo is achieved and quantified. Using this approach, we have identified key roles for CD4+ T cells in CLL expansion, a direct link between CD38 expression by leukemic B cells and their activation, and support for CLL cells preferentially proliferating in secondary lymphoid tissues. The model should simplify analyzing kinetics of CLL cells in vivo, deciphering involvement of nonleukemic elements and nongenetic factors promoting CLL cell growth, identifying and characterizing potential leukemic stem cells, and permitting preclinical studies of novel therapeutics. Because autologous activated T lymphocytes are 2-edged swords, generating unwanted graph-versus-host and possibly autologous antitumor reactions, the model may also facilitate analyses of T-cell populations involved in immune surveillance relevant to hematopoietic transplantation and tumor cytoxicity.
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| 4. |
- Baskar, K., et al.
(författare)
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Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 248, s. 431-436
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Tidskriftsartikel (refereegranskat)abstract
- GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydrazine (DMHy) flow. Cross-sectional AFM image showed the presence of defects at the interface of GaInNAs/GaAs. The low temperature photoluminescence characteristics of the QWs as a function of growth temperature. DMHy flow and density of surface pits have been discussed. The origin of pit formation is addressed based on the pyrolysis products present during the growth of QWs. The results suggest that higher growth temperature maybe desirable to obtain good quality GaInNAs QWS.
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| 5. |
- Manavaimaran, Balaji, et al.
(författare)
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Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition
- 2015
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 414, s. 69-75
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Tidskriftsartikel (refereegranskat)abstract
- AIN layers of thickness of about 2 mu m have been grown with AIN nucleation layers (NLs) on (001) sapphire substrates using metal organic chemical vapor deposition. Increasing the AlN-NL deposition temperature from 850 to 1250 degrees C has been found to have significant effect on the surface morphology and the structural quality of the AIN layers. The surface morphology of the AlN-NLs and the AIN layers has been assessed using atomic force microscopy (AFM). The AM images of the AlN-NLs reveal the coalescence pattern of NLs. AM images of the AlN layers and the in-situ reflectance measurement disclose the surface morphology and the growth pattern of the AIN layers, respectively. Smooth surface with macro-steps and terrace features has been achieved for the AIN layer grown on the NL deposited at 950 degrees C. The structural quality of AIN layers has been studied by high resolution X-ray diffraction and Raman spectroscopy. The screw dislocation density from (002) reflection and the average edge dislocation density from (102), (302) and (100) reflections of the AIN layer on NL deposited at 950 degrees C are estimated to be 9 x 10(7) cm(-2) and 4.4 x 10(9) cm(-2), respectively. Lateral correlation length (L) is calculated from the (114) reciprocal space mapping of the AIN layers and correlated with the edge dislocation density of the AIN layers. Raman E-2 (high) phonon mode indicates compressive strain in the AIN layers grown on the NLs deposited at various temperatures. From this work, it has been inferred that the uniform coalescence of the nucleation islands and the complete coverage of AlN-NL determine the surface morphology and the structural quality of the subsequently grown AIN layers.
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| 6. |
- Mogg, S., et al.
(författare)
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High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2-Όm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.
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| 7. |
- Mogg, Sebastian, et al.
(författare)
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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
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| 8. |
- Periyathambi, Prabu, et al.
(författare)
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Osteogenic potency of magnetic fibrin nanoparticles—A novel perspective in bone tissue engineering
- 2015
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Ingår i: Materials letters (General ed.). - : Elsevier BV. - 0167-577X .- 1873-4979. ; 139, s. 108-111
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Tidskriftsartikel (refereegranskat)abstract
- In the present study, goat blood has been used as the starting material for the preparation of novel magnetic fibrin nanoparticles (MAG–FNPs) in tissue engineering. The synthesised nanoparticles were characterized by X-ray diffractometer (XRD), transmittance electron microscope (TEM), scanning electron microscope (SEM), Fourier Transform Infrared spectroscopy (FTIR), energy dispersive X-ray spectroscopy (EDX) and vibrating sample magnetometer (VSM) analysis. The osteogenic potential of MAG–FNPs was evaluated by performing cell viability assay and quantifying alkaline phosphatase (ALP) levels using Saos-2 cells. The results obtained suggested that MAG–FNPs could serve as promising biomaterial for bone tissue engineering.
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| 9. |
- Sundgren, P., et al.
(författare)
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Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed bragg reflectors grown by metal-organic vapor-phase epitaxy
- 2002
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 241-244
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Konferensbidrag (refereegranskat)abstract
- We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680°C.
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