| 1. |
- Aad, G, et al.
(författare)
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- 2015
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swepub:Mat__t
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| 2. |
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| 3. |
- Akiba, K., et al.
(författare)
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LHC forward physics
- 2016
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Ingår i: Journal of Physics G: Nuclear and Particle Physics. - : IOP Publishing. - 0954-3899 .- 1361-6471. ; 43:11
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Balestra, F., et al.
(författare)
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NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
- 2008
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 11:5-6, s. 148-159
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Tidskriftsartikel (refereegranskat)abstract
- NANOSIL Network of Excellence [NANOSIL NoE web site < www.nanosil-noe.eu >], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs), and to disseminating the results in a wide scientific and industrial community. NANOSIL is exploring and assessing the science and technological aspects of nanodevices and operational regimes relevant to the n+4 technology node and beyond. It encompasses projects on nanoscale CMOS and beyond-CMOS. Innovative concepts, technologies and device architectures are proposed-with fabrication down to the finest features, and utilising a wide spectrum of advanced deposition and processing capabilities, extensive characterization and very rigorous device modeling. This work is carried out through a network of joint processing, characterization and modeling platforms. This critical interaction strengthens European integration in nanoelectronics and will speed up technological innovation for the nanoelectronics of the next two to three decades.
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| 5. |
- Baus, M., et al.
(författare)
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Device architectures based on graphene channels
- 2008
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Ingår i: 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS. - NEW YORK : IEEE. ; , s. 269-272
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Konferensbidrag (refereegranskat)abstract
- Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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| 6. |
- Baus, M, et al.
(författare)
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Fabrication of monolithic bidirectional switch devices
- 2004
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 73-4, s. 463-467
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented. This concept allows the integration of a bidirectional switch with the advantages of low power consumption, small package size, and low fabrication costs. Furthermore, device simulations predict a performance benefit for power applications such as matrix converters. In an MBS, the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon. A CMOS-compatible nano-fabrication process for the MBS is proposed, employing local oxidation of silicon for self-aligned contact formation. First electrical results are presented. (C) 2004 Elsevier B.V. All rights reserved.
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| 7. |
- Baus, M., et al.
(författare)
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Fabrication of monolithic bidirectional switch (MBS) devices with MOS-controlled emitter structures
- 2006
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Ingår i: PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ; , s. 181-184
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Konferensbidrag (refereegranskat)abstract
- A novel high-voltage power device, the Monolithic Bidirectional Switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned sificidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm(2) at V(on) = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter.
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| 8. |
- Baus, M, et al.
(författare)
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Monolithic Bidirectional Switch (MBS) - A novel MOS-based power device
- 2005
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Ingår i: PROCEEDINGS OF ESSDERC 2005. - 0780392035 ; , s. 473-476
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Konferensbidrag (refereegranskat)abstract
- A novel MOS-based power device, the Monolithic Bidirectional Switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.
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| 9. |
- Echtermeyer, T. J., et al.
(författare)
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Graphene field-effect devices
- 2007
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Ingår i: The European Physical Journal Special Topics. - : Springer Science and Business Media LLC. - 1951-6355 .- 1951-6401. ; 148:1, s. 19-26
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Tidskriftsartikel (refereegranskat)abstract
- In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices ( FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors ( MOSFETs).
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| 10. |
- Echtermeyer, Tim J., et al.
(författare)
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Nonvolatile switching in graphene field-effect devices
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:8, s. 952-954
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Tidskriftsartikel (refereegranskat)abstract
- The absence of a band gap in graphene restricts its straightforward application as a channel material in field-effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "ON-state" and an insulating "OFF-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts.
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