| 1. |
- Belonovskii, A. V., et al.
(författare)
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Strong Coupling of Excitons in Hexagonal GaN Microcavities
- 2020
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Ingår i: Semiconductors (Woodbury, N.Y.). - : PLEIADES PUBLISHING INC. - 1063-7826 .- 1090-6479. ; 54:1, s. 127-130
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Tidskriftsartikel (refereegranskat)abstract
- The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature cathodoluminescence method using a scanning electron microscope. The obtained spectra show a huge Rabi splitting (similar to 100 meV). Numerical simulation of the spatial distribution of the intensities of modes in a hexagonal cavity is carried out. Certain modes can have a high spatial localization leading to strong coupling with the exciton and huge Rabi splitting. The fraction of excitons in polariton modes, which correlates with the intensity of exciton radiation associated with these modes, is theoretically calculated for hexagonal-shaped microcavities. Thus, the form of the dependence of the radiation probability on the eigenfrequencies of the structure is obtained.
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| 2. |
- Girshova, E. I, et al.
(författare)
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Enhancement of the Basal-plane Stacking Fault Emission in GaN Planar Nanowire Microcavity
- 2022
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Ingår i: JETP Letters. - : MAIK NAUKA/INTERPERIODICA/SPRINGER. - 0021-3640 .- 1090-6487. ; 115, s. 574-580
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Tidskriftsartikel (refereegranskat)abstract
- We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects are considered. The behavior of an exciton localized in a stacking fault is considered. Different behavior of the photoluminescence intensity and the photoluminescence decay time is observed for the cases under consideration. Theoretical calculations show the localization of the field at the ends of the structure.
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| 3. |
- Pozina, Galia, et al.
(författare)
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Emission Properties of GaN Planar Hexagonal Microcavities
- 2020
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Ingår i: Physica Status Solidi (a) applications and materials science. - : WILEY-V C H VERLAG GMBH. - 1862-6300 .- 1862-6319. ; 217:14
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Tidskriftsartikel (refereegranskat)abstract
- Fabrication of microcavities based on III-nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of periods, at the same time keeping a good precision in terms of thickness and composition of the alloy. A planar design for GaN microresonators supporting whispering gallery modes is suggested. GaN hexagonal microstructures are fabricated by selective-area metalorganic vapor phase epitaxy using focused ion beam for mask patterning. Low-temperature cathodoluminescence spectra measured with a high spatial resolution demonstrate two dominant emission lines in the near bandgap region. These lines merge at room temperature into a broad emission band peaking at approximate to 3.3 eV, which is shifted toward lower energies compared with the reference excitonic spectrum measured for the GaN layer. A numerical analysis of exciton-polariton modes shows that some strongly localized cavity modes can have high Purcell coefficients and can strongly interact with the GaN exciton.
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