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Sökning: WFRF:(Bengtsson Daniel 1984)

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1.
  • Högman, Ulf, 1961, et al. (författare)
  • Requirements on New Technology and the Technology Implementation Process
  • 2010
  • Ingår i: 8th International NordDesign Conference, NordDesign 2010; Goteborg; Sweden; 25 August 2010 through 27 August 2010. ; 2, s. 289-300
  • Konferensbidrag (refereegranskat)abstract
    • In literature, many authors have pointed to the importance of technology and technology development for company competitiveness. In this study we aim to study the technology in more detail and attempt to develop an understanding on the requirements and needs on “technology” from the perspective of product development. The research question which we aim to answer in this study is:“What are the requirements on maturity of technology when this technology is about to enter into the product development process?“A qualitative research strategy, based on three study cases involving 17 interviewees, has been chosen. All three cases come from one single company, Volvo Aero Corporation (VAC) in Sweden, in the context of the aero engine industry. The study contributes with a broad mapping of requirements and how they relate to different categories of technologies, showing big differences both regarding content and timing. It is concluded that attention should be payed both to how the organization builds new capabilities and to the capabilities of the technology itself. A surprisingly complicated picture on the requirements relating to the implementation of new technologies has emerged in the study. This contributes to the understanding regarding the difficulties of developing new technology and integrating it into an application.
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2.
  • Osman, Amr, 1993, et al. (författare)
  • Simplified Josephson-junction fabrication process for reproducibly high-performance superconducting qubits
  • 2021
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 118:6
  • Tidskriftsartikel (refereegranskat)abstract
    • We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with T1 relaxation times averaging above 50 μs (Q > 1.5 × 1 0 6). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. This eliminates a key bottleneck in manufacturing superconducting qubits by reducing the fabrication time and cost. In a study of more than 3600 junctions, we show an average resistance variation of 3.7% on a wafer that contains forty 0.5 × 0.5-cm2 chips, with junction areas ranging between 0.01 and 0.16 μm2. The average on-chip spread in resistance is 2.7%, with 20 chips varying between 1.4% and 2%. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7%-2.5%. We show that 60%-70% of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.
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