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- Westlinder, Jörgen, 1973-
(författare)
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Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies
- 2004
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. For future CMOS devices, new materials are required in the transistor structure to enable further scaling and improve the transistor performance.This thesis focuses on novel metal gate and high-κ dielectric materials for future CMOS technologies. Specifically, TiN and ZrN gate electrode materials were studied with respect to work function and thermal stability. High work function, suitable for pMOS transistors, was extracted from both C-V and I-V measurements for PVD and ALD TiN in TiN/SiO2/Si MOS capacitor structures. ZrNx/SiO2/Si MOS capacitors exhibited n-type work function when the low-resistivity ZrNx was deposited at low nitrogen gas flow. Further, variable work function by 0.6 eV was achieved by reactive sputter depositing TiNx or ZrNx at various nitrogen gas flow. Both metal-nitride systems demonstrate a shift in work function after RTP annealing, which is discussed in terms of Fermi level pinning due to extrinsic interface states. Still, the materials are promising in a gate last process as well as show potential as complementary gate electrodes.The dielectric constant of as-deposited (Ta2O5)1-x(TiO2)x thin films is around 22, whereas that of AlN is about 10. The latter is not dependent on the degree of crystallinity or on the measurement frequency up to 10 GHz. Both dielectrics exhibit characteristics appropriate for integrated capacitors. Finally, utilization of novel materials were demonstrated in strained SiGe surface-channel pMOSFETs with an ALD TiN/Al2O3 gate stack. The transistors were characterized with standard I-V, charge pumping, and low-frequency noise measurements. Correlation between the mobility and the oxide charge was found. Improved transistor performance was achieved by conducting low-temperature water vapor annealing, which reduced the negative charge in the Al2O3.
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| 4. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
- 2009
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:134, s. 134-136
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Tidskriftsartikel (refereegranskat)abstract
- We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.
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| 5. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers
- 2008
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Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616
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Tidskriftsartikel (refereegranskat)abstract
- We present an experimental and theoretical investigationof the temperature dependence of the threshold current fordouble quantum well GaInNAs–GaAs lasers in the temperaturerange 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide(RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates thethreshold current for narrow RWG lasers.
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| 7. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:9, s. 093112-
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Tidskriftsartikel (refereegranskat)abstract
- Spectrally engineered semiconductor Fabry-Perot laser resonators are designed to enhance the optical feedback for selected longitudinal modes, which thereby require less gain for lasing. This is achieved by introducing refractive index perturbations along the length of the resonator. However,the physical realization of these resonators is a challenge because of very narrow tolerances; in particular the need for precise positioning of the end facets of the resonator in relation to the perturbations, and the excess propagation loss associated with the perturbations, has been a majorconcern. We report on a method to achieve high-quality end facet mirrors enabling precise positioning relative to the perturbations, the latter which are realized as lateral corrugations of the waveguide. Measurements show that the mirror quality is comparable to that of cleaved mirrorsand that the additional loss introduced by the perturbations adds
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| 8. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Spectral engineering of semiconductor Fabry–Perot laser cavities in the weakly and strongly perturbed regimes
- 2010
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Ingår i: Journal of the Optical Society of America B: Optical Physics. - 1520-8540 .- 0740-3224. ; 27:1, s. 118-127
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Tidskriftsartikel (refereegranskat)abstract
- By inserting index perturbations at certain positions along a semiconductor Fabry–Perot laser cavity thethreshold gain for one or several of the longitudinal cavity modes can be selectively lowered to facilitate, e.g.,single-mode or two-color operation. Previous design methods were limited to a fairly small number of perturbations,leading to only weakly perturbed cavities and thus a limited freedom in tailoring the spectral propertiesof the laser. In our approach we fully account for all multiple-reflection events and use a search spacethat permits any distribution of the locations and lengths of the perturbations. We are therefore able to designcavities with almost arbitrary spectral properties with very low threshold gain values for, e.g., the lasingmodes of a two-color cavity. Constraining the design by reducing the geometrical freedom, which can be used toincrease the smallest feature size to simplify fabrication, we seamlessly approach the weakly perturbed regimewhile maintaining much of the freedom for spectral engineering.
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| 9. |
- Arafin, S., et al.
(författare)
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Comprehensive analysis of electrically-pumped GaSb-based VCSELs
- 2011
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:18, s. 17267-17282
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Tidskriftsartikel (refereegranskat)abstract
- This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications.
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| 10. |
- Beck, Astrid L, et al.
(författare)
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Cotinine concentrations in maternal serum and amniotic fluid during pregnancy and risk of testicular germ cell cancer in the offspring : A prospective nested case-control study
- 2024
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Ingår i: International Journal of Cancer. - 0020-7136. ; 154:1, s. 71-80
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Tidskriftsartikel (refereegranskat)abstract
- Maternal smoking in pregnancy may increase the risk of testicular germ cell cancer (TGCC) in offspring, but current evidence remains inconclusive. We performed a nested case-control study using cotinine measurements in maternal serum and amniotic fluid as a biomarker for tobacco exposure during pregnancy. A total of 654 males with maternal serum (n = 359, ncases/controls = 71/288) and/or amniotic fluid (n = 295, ncases/controls = 66/229) samples were included. Data on TGCC diagnoses and relevant covariates were derived from nationwide Danish health registries. Cotinine was quantified by liquid chromatography tandem mass spectrometry. An adapted cox regression model estimated the risk of TGCC considering active and inactive tobacco use defined according to cotinine concentrations of <, ≥15 ng/ml. Overall, the concentrations of cotinine were comparable in maternal serum and amniotic fluid (medianserum/amniotic fluid : 2.1/2.6 ng/ml). A strong statistically significant correlation was detected in 14 paired samples (Spearman rho: 0.85). Based on maternal serum cotinine concentrations, exposure to active tobacco use was not associated with risk of TGCC in offspring (HR 0.88, 95% CI 0.51; 1.52). Similarly, based on amniotic fluid cotinine concentrations, exposure to active tobacco use was not associated with risk of TGCC (HR 1.11, 95% CI 0.64; 1.95). However, different risks were observed for seminomas and nonseminomas in both matrices, but none were statistically significant. Our findings did not provide convincing evidence supporting that exposure to tobacco during pregnancy is associated with TGCC.
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