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- Bengtsson, Stefan, 1961, et al.
(författare)
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Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
- 1999
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Ingår i: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133-
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Konferensbidrag (refereegranskat)abstract
- Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
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| 3. |
- Alavian Ghavanini, Farzan, 1978, et al.
(författare)
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CMOS considerations in nanoelectromechanical carbon nanotube-based switches
- 2008
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Ingår i: Nanotechnology. - 1361-6528 .- 0957-4484.
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we focus on critical issues directly related to the viability of carbon nanotube-based nanoelectromechanical switches, to perform their intended functionality as logic and memory elements, through assessment of typical performance parameters with reference to complementary metal-oxide-semiconductor devices. A detailed analysis of performance metrics regarding threshold voltage control, static and dynamic power dissipation, speed, and integration density is presented. Apart from packaging and reliability issues, these switches seem to be competitive in low power, particularly low-standby power, logic and memory applications.
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| 4. |
- Alavian Ghavanini, Farzan, 1978, et al.
(författare)
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Vertically aligned carbon based varactors
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:2
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Tidskriftsartikel (refereegranskat)abstract
- This paper gives an assessment of vertically aligned carbon based varactors and validates their potential for future applications. The varactors discussed here are nanoelectromechanical devices which are based on either vertically aligned carbon nanofibers or vertically aligned carbon nanotube arrays. A generic analytical model for parallel plate nanoelectromechanical varactors based on previous works is developed and is used to formulate a universal expression for their voltage-capacitance relation. Specific expressions for the nanofiber based and the nanotube based varactors are then derived separately from the generic model. This paper also provides a detailed review on the fabrication of carbon based varactors and pays special attention to the challenges in realizing such devices. Finally, the performance of the carbon based varactor is assessed in accordance with four criteria: the static capacitance, the tuning ratio, the quality factor, and the operating voltage. Although the reported performance is still far inferior to other varactor technologies, our prognosis which stems from the analytical model shows a promise of a high quality factor as well as a potential for high power handling for carbon based varactors.
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| 8. |
- Amirfeiz, Petra, 1973, et al.
(författare)
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Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
- 2003
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Ingår i: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
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Konferensbidrag (refereegranskat)abstract
- The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
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| 10. |
- Asplund Persson, Anna, 1966-, et al.
(författare)
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Cross-talk between adenosine and the oxatriazole derivative GEA 3175 in platelets
- 2005
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Ingår i: European Journal of Pharmacology. - : Elsevier BV. - 0014-2999 .- 1879-0712. ; 517:3, s. 149-157
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Tidskriftsartikel (refereegranskat)abstract
- We examined the interplay between adenosine and the nitric oxide (NO)-containing oxatriazole derivative GEA 3175 in human platelets. The importance of cyclic guanosine 3′5′-monophosphate (cGMP)-inhibited phosphodiesterases (PDEs) was elucidated by treating the platelets with adenosine combined with either GEA 3175 or the PDE3-inhibitor milrinone. The drug combinations provoked similar cyclic adenosine 3′5′-monophosphate (cAMP) responses. On the contrary, cGMP levels were increased only in GEA 3175-treated platelets. Both drug combinations reduced P-selectin exposure, platelet adhesion and fibrinogen-binding. However, adenosine together with GEA 3175 was more effective in inhibiting platelet aggregation and ATP release. Thrombin-induced rises in cytosolic Ca2+ were suppressed by the two drug combinations. Adenosine administered with GEA 3175 was, however, more effective in reducing Ca2+ influx.In conclusion, the interaction between adenosine and GEA 3175 involves cGMP-mediated inhibition of PDE3. The results also imply that inhibition of Ca2+ influx represent another cGMP-specific mechanism that enhances the effect of adenosine.
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